Maskless sub-μm patterning of silicon carbide using a focused ion beam in combination with wet chemical etching

1998 ◽  
Vol 16 (2) ◽  
pp. 540 ◽  
Author(s):  
R. Menzel
Keyword(s):  
Silicon Carbide ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Chemical ◽  
Wet Chemical Etching

Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Wei Chen ◽  
P. Chen ◽  
A. Madhukar ◽  
R. Viswanathan ◽  
J. So
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Free Standing ◽  
Scale Thickness ◽  
Ion Beam Implantation ◽  
Etch Stop ◽  
Wet Chemical ◽  
Etching Behavior ◽  
Wet Chemical Etching

ABSTRACTWe report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

Micro Fabrication by Focused Ion Beam and Wet Chemical Etching

2004 ◽  
Vol 2004.5 (0) ◽  
pp. 111-112
Author(s):  
Noritaka KAWASEGI ◽  
Noboru MORITA ◽  
Noboru TAKANO ◽  
Kiwamu ASHIDA ◽  
Jun TANIGUCHI ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Micro Fabrication ◽  
Wet Chemical ◽  
Wet Chemical Etching

Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 6142-6144 ◽  
Author(s):  
Harald König ◽  
Johann Peter Reithmaier ◽  
Alfred Forchel
Keyword(s):  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Maskless Patterning

Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors

1999 ◽  
Author(s):  
R. Alani ◽  
R. J. Mitro ◽  
W. Hauffe
Keyword(s):  
Cross Sections ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Inert Gas ◽  
Specimen Preparation ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Abstract The semiconductor industry routinely prepares crosssectional SEM specimens using several traditional techniques. Included in these are cleaving, mechanical polishing, wet chemical etching and focused ion beam (FIB) milling. This presentation deals with a new alternate method for preparation of SEM semiconductor specimens based upon a dedicated broad ion beam instrument. Offered initially as an alternative to wet chemical etching, the instrument was designed to etch and coat SEM and metallographic specimens in one vacuum chamber using inert gas (Ar) ion beams. The system has recently undergone further enhancement by introducing iodine Reactive Ion Beam Etching (RIBE) producing much improved etching/cleaning capabilities compared with inert gas ion beam etching. Further results indicate Ar broad ion beam etching can offer a rapid, simple, more affordable alternative (to FIB machines) for precision cross sections and for “slope cutting,” a technique producing large cross-sections within a short time frame. The overall effectiveness of this system for iodine RIBE etching, for precision cross sectioning and “slope cutting” will be shown for a number of traditional and advanced semiconductor devices.

scholarly journals Three-dimensional structuring of sapphire by sequential He + ion-beam implantation and wet chemical etching

2003 ◽  
Vol 76 (7) ◽  
pp. 1109-1112 ◽  
Author(s):  
A. Crunteanu ◽  
G. Jänchen ◽  
P. Hoffmann ◽  
M. Pollnau ◽  
C. Buchal ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Implantation ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals Preparation of Small Silicon Carbide Quantum Dots by Wet Chemical Etching

2012 ◽  
Vol 1468 ◽  
Author(s):  
D. Beke ◽  
Zs. Szekrényes ◽  
I. Balogh ◽  
M. Veres ◽  
É Fazakas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Particle Size ◽  
Chemical Etching ◽  
Blue Emission ◽  
Fabrication Method ◽  
Infrared Measurements ◽  
Wet Chemical ◽  
Wet Chemical Etching

ABSTRACTLuminescence nanocrystals or quantum dots give grate potential for bio-analysis as well as optoelectronics. Here we report an effective and non-expensive fabrication method of silicon carbide nanocrystals, with diameter below 10 nm, based on electroless wet chemical etching. Our samples show strong violet-blue emission in the 410-450 nm region depending on the used solvents and particle size. Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide colloid solvents and also give opportunity to modify the surface easily for specific biological, medical or other application.

A Novel Method of Fabricating SiC-On-Insulator Substrates for Use in MEMS

2001 ◽  
Vol 681 ◽  
Author(s):  
Hung-I Kuo ◽  
Christian Zorman ◽  
Mehran Mehregany
Keyword(s):  
Silicon Carbide ◽  
Wafer Bonding ◽  
Chemical Etching ◽  
Microelectromechanical Systems ◽  
Electronic Devices ◽  
High Deposition Rate ◽  
Method Transfer ◽  
Novel Method ◽  
Wet Chemical ◽  
Wet Chemical Etching

ABSTRACTThis paper reports on a novel, bonding-free method to fabricate silicon carbide-on-insulator (SiCOI) substrates. The process bypasses wafer bonding by using a high deposition rate polysilicon process in conjunction with wet chemical etching to produce wafer-thick polysilicon layers that serve as substrates for the SiCOI structures. Because wafer bonding is not used, insulators of various material types and thickness can be used. Using this method, transfer percentages over 99% are readily achievable. Various applications could benefit from this technology, including high temperature SiC-based microelectromechanical systems (MEMS) and SiC electronic devices.

Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

1986 ◽  
Vol 49 (11) ◽  
pp. 654-656 ◽  
Author(s):  
J. R. A. Cleaver ◽  
P. J. Heard ◽  
A. F. Evason ◽  
H. Ahmed
Keyword(s):  
Silicon Dioxide ◽  
Chemical Etching ◽  
Ion Beam ◽  
Fine Structures ◽  
Wet Chemical ◽  
Wet Chemical Etching

Characterization of luminescent silicon carbide nanocrystals prepared by reactive bonding and subsequent wet chemical etching

2011 ◽  
Vol 99 (21) ◽  
pp. 213108 ◽  
Author(s):  
David Beke ◽  
Zsolt Szekrényes ◽  
István Balogh ◽  
Miklós Veres ◽  
Éva Fazakas ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching
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