Composite intermediate layer for CVD diamond film on steel substrate

MRS Advances ◽  
2017 ◽  
Vol 2 (41) ◽  
pp. 2211-2216 ◽  
Author(s):  
Andre Contin ◽  
Getúlio de Vasconcelos ◽  
Djoille D. Damm ◽  
Vladimir J. Trava-Airoldi ◽  
Raonei A. Campos ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Diamond Film ◽  
Steel Substrate ◽  
Substrate Surface ◽  
Composite Layer ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Substrate Material ◽  
Film Deposition ◽  
Carbon Solubility

ABSTRACTThe union of the unique diamond properties with steel (most common substrate material) provides a new solution for machine parts under critical mechanical conditions and severe environmental. However, CVD diamond coating directly on steel comes with several issues. The fundamental reasons for the lack of adhesion are an iron catalytic effect, the high carbon solubility in iron and high mismatch in thermal expansion coefficient of diamond and steel. The use of interlayer may solve these issues acting as a diffusion barrier, for both iron and carbon, and match thermal expansion coefficients. Several articles describe the PVD deposition or electroplated interlayer. In the present study, the diamond film coated steel with an intermediate barrier deposited by laser cladding process. In this novel technique, laser irradiation melts the powder (preplaced) and the substrate surface to create the coating on a steel substrate. We used the SiC/Ti and SiC/Cu powder mixtures to create the intermediate barrier. Diamond film deposition was carried out in an HFCVD reactor (Hot Filament Chemical Vapor Deposition). The samples characterization included X-ray Diffraction (XRD); Field Emission Gun - Scanning Electron Microscopy (FEG-SEM) and Raman Scattering Spectroscopy (RSS). Results showed that laser incidence dissociated partially the SiC powder, forming FeSi, Cu3Si phases. Further, the composite layer assisted the high thermal stress relief in steel/diamond interface.

Atomic Scale Kinetic Monte Carlo (KMC) Simulation on a New {111}-Oriented Chemical Vapor Deposition (CVD) Diamond Film Growth Process: Two-Step Growth

2012 ◽  
Vol 548 ◽  
pp. 345-348
Author(s):  
Li Zhu Zhang ◽  
Fu Zhong Wang
Keyword(s):  
Substrate Temperature ◽  
Diamond Film ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Film Deposition ◽  
Atomic Scale ◽  
Step Model ◽  
Cvd Diamond Film

The growth of {111}-oriented CVD diamond film under a two-step model was simulated at atomic scale by using revised KMC method. The simulation was conducted at various substrate temperature (1100K-1400K), CH3 radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.005%-0.3%). The results showed that: Substrate temperature (Ts), the concentration of CH3 ([CH3]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate and surface roughness.

Growth of (100) oriented diamond grains by the application of lateral temperature gradients across silicon substrates

2004 ◽  
Vol 19 (11) ◽  
pp. 3206-3213 ◽  
Author(s):  
E. Titus ◽  
D.S. Misra ◽  
Manoj. K. Singh ◽  
Pawan. K. Tyagi ◽  
Abha Misra ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Film Deposition ◽  
Temperature Gradients ◽  
Diamond Surface ◽  
Silicon Substrates ◽  
Oriented Growth ◽  
Oriented Samples ◽  
Diamond Grain

Polycrystalline diamond films with a predominant (100) texture were deposited onto silicon substrates using hot-filament chemical vapor deposition. During film deposition, different temperature gradients were created and imposed laterally across the substrate materials. Films grown under a gradient of 100 °C cm−1 displayed large (100) oriented grains. No crystallite (100) orientation was observed in the as-grown films prepared without a temperature gradient. It was observed that the diamond grain size varied as a function of the gradient. The lower gradient resulted in smaller grains and vice versa. Furthermore, the size of the grains was a function of the deposition time. The orientation of the diamond grains changed gradually across the substrate from (100) to (110) orientation as we scanned from the high-temperature to the low-temperature zone. The films were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy. XRD showed strong (400) reflections in the oriented samples. SEM results indicated the presence of smooth diamond surfaces consisting of predominantly (100) oriented platelets. As the (100) oriented diamond grains were grown on top of the (100) oriented silicon substrates, the faces were mostly aligned parallel to the substrate surface resulting in the deposition of a smooth diamond surface. AFM observations revealed the presence of steps located at the boundaries of the oriented grains. FTIR results showed the characteristic difference in hydrogen bonding in the oriented samples and gave useful information about mechanisms responsible for the orientation. Quantitative analysis was carried out to measure the H content in the films, and it was found that the oriented films contained less hydrogen. Our findings suggest that high saturation of carbon and a concentration gradient of sp3 CH2 species can be the key factor in the oriented growth of (100) diamond grains.

Abrasion resistance of Ni-B/Si3N4 composite layers produced by electroless method

2017 ◽  
Vol 1 (87) ◽  
pp. 21-26 ◽  
Author(s):  
A. Mazurek ◽  
G. Cieślak ◽  
W. Bartoszek ◽  
M. Trzaska
Keyword(s):  
Steel Substrate ◽  
Composite Layer ◽  
Substrate Material ◽  
Dispersion Phase ◽  
Si3n4 Powder ◽  
Composite Layers ◽  
Surface Development ◽  
Silicon Nitride Powder ◽  
Wear Damage ◽  
Powder Content

Purpose: The paper presents the results of investigations of Ni-B/Si3N4 composite layers produced on steel substrate by electroless method. Design/methodology/approach: Amorphous silicon nitride powder (Si3N4) with nanometric particle sizes was used as a dispersion phase for the production of composite layers. Ni-B/Si3N4 composite layers were produced in baths of varying Si3N4 powder content. For comparative purposes, the study also includes results related to a Ni-B layer. The Si3N4 powder and the structure of the produced layers were characterized. The topography and morphology of the surface of the produced layers are presented. The adhesion of the layers to the substrate material was determined. Microhardness and tribological properties of test materials were determined. Findings: The results of the studies show that Ni-B/Si3N4 composite layers and Ni-B composite layers are characterized by compact structures and good adhesion to the substrate material. The incorporation of Si3N4 particles into the Ni-B layers increases the degree of surface development of the layers. The Ni-B/Si3N4 composite layer material exhibits less microhardness and less abrasive wear compared to Ni-B layers. However, the extent of wear damage of the Ni-B/Si3N4 is relatively small comparing to Ni-B layers.

The Performance of Plasma and Multi-Physical Fields in DC Arc Plasma Reactor for CVD Diamond Film

2016 ◽  
Vol 852 ◽  
pp. 1140-1146
Author(s):  
Xiao Jing Li ◽  
Yong Liang Gao ◽  
Yan Yin ◽  
Shun Qi Zheng ◽  
Yang Sheng Zheng
Keyword(s):  
Diamond Film ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Plasma Temperature ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Arc Plasma ◽  
Cvd Diamond Film ◽  
Physical Fields ◽  
Dc Arc

Numerical simulation method was developed to investigate the performance of plasma and multi-physical fields in direct current (DC) arc plasma reactor for chemical vapor deposition (CVD) Diamond film,in order to obtain more information on the process of CVD. Finite Volume Method (FVM) was adopted. Continuous arc forming and the dynamic formation process of rotating arc plasma were shown in this paper. Multi-physics field in deposition chamber were modeled including flow field, temperature field. Distribution of velocity and temperature were obtained by solving momentum and energy equation with SIMPLE separation algorithm. Simulation results show that, plasma temperature near the cathode tip is the highest, which is more than 1×104K. The plasma distribution shape like the bell jar. The changing regularity of outlet velocity, temperature and static pressure with the distance from the anode center were revealed. The effectiveness of plasma temperature and gas flow calculated was confirmed by the experimental results. The research results provide the theoretical foundation for obtaining uniform diamond thick film.

The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas

1999 ◽  
Vol 14 (8) ◽  
pp. 3196-3199 ◽  
Author(s):  
G. C. Chen ◽  
C. Sun ◽  
R. F. Huang ◽  
L. S. Wen ◽  
D. Y. Jiang ◽  
...  
Keyword(s):  
Temperature Field ◽  
Chemical Vapor Deposition ◽  
Temperature Gradient ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Degree Of Orientation ◽  
Hot Filament

A (110)-oriented diamond film was deposited by hot filament chemical vapor deposition with H2 and CH4 separately introduced into the reactive zone. The film with a degree of orientation I(220)/I(111) of more than 200% and deposition rate of 2–3 μm/h was obtained for a deposition time of 17 h. The long deposition time enlarged the grain size and enhanced the degree of orientation, but too long a deposition time resulted in random growth. The temperature field was measured and also calculated using a simple model. Both results showed that a temperature field existed with varied gradients along the normal of substrate surface. The (110)-oriented diamond film was deposited in the zone with negative temperature gradient. The change in orientation occurring for long deposition times was ascribed to the change of temperature gradient.

Synthesis of diamond films on Hastelloy

1992 ◽  
Vol 7 (10) ◽  
pp. 2785-2790 ◽  
Author(s):  
V.P. Godbole ◽  
J. Narayan
Keyword(s):  
Diamond Film ◽  
Composite Layer ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Diamond Growth ◽  
Chemical Vapor Deposition Method ◽  
Nucleation Sites ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Hot Filament

We have developed a two-step hot filament chemical vapor deposition method to form polycrystalline films of diamond on Hastelloy substrates. The first step at a lower temperature results in the deposition of a composite layer of carbon, diamond-like carbon, and diamond, which provide nucleation sites for diamond growth in the second step at a higher temperature. To obtain a cleaner amorphous carbon-free diamond film, we introduced an intermediate hydrogen etching step. Using this procedure, we have obtained high quality polycrystalline diamond film on Hastelloy substrates, as characterized by scanning electron microscopy and Raman measurements.

Deposition of Ceramic Films by A Novel Pulsed-Gas Mocvd Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Kenneth A. Aitchison ◽  
James D. Barrie ◽  
Joseph Ciofalo
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Flow Reactor ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Oxide Systems ◽  
Metal Organic ◽  
Mocvd Technique

ABSTRACTMetal-Organic Chemical Vapor Deposition (MOCVD) is a versatile technique for the deposition of thin films of metals, semiconductors and ceramics. Commonly used hot wall flow-reactor designs suffer from a number of limitations. Chemical processes occurring in these reactors typically include a combination of homogeneous (gas-phase) and heterogeneous (gas-surface) reactions. These complex conditions are difficult to model and are poorly understood. In addition, flow reactors use large quantities of expensive precursor materials and are not well suited to the formation of abrupt interfaces. We report here a novel MOCVD technique which addresses these problems and enables a more thorough mechanistic understanding of the heterogeneous decomposition pathways of metal-organic compounds. This technique, the low-pressure pulsed gas method, has been demonstrated to provide high deposition rates with excellent control over film thickness. The deposition conditions effectively eliminate homogeneous processes allowing surface-mediated reactions to dominate. This decoupling of gas-phase chemistry from film deposition allows a better understanding of reaction mechanisms and provides better control over film growth. Both single metal oxides and binary oxide systems have been investigated on a variety of substrate materials. Effects of precursor chemistry, substrate surface, temperature and pressure on film composition and morphology will be discussed.

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