Nanoscale flow deformation of silicate glass ultrathin films for development of nano-patterned glass surfaces

2004 ◽  
Vol 19 (9) ◽  
pp. 2683-2686 ◽  
Author(s):  
Shusaku Akiba ◽  
Wakana Hara ◽  
Shuhei Sato ◽  
Akifumi Matsuda ◽  
Atsushi Sasaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Ultrathin Films ◽  
Glass Surface ◽  
Substrate Surface ◽  
Oxide Glass ◽  
Glass Transition Point ◽  
Contact Mode ◽  
Stepped Surface ◽  
Flow Deformation ◽  
Glass Surfaces

The nanoscale behavior of high-temperature flow deformation for silicate-based oxide glass ultrathin films was characterized with focus on forming a nano-patterned glass surface. The oxide glass thin films were deposited at room temperature by pulsed laser deposition onto the ultrasmooth sapphire substrates with 0.2-nm-high atomic steps. It was found from atomic force microscopy (AFM) measurements that the silicate ultrathin films (about 3 nm thick) started to deform at a temperature 50 °C lower than the glass transition point of the bulk glass. The glass thin films annealed at high temperatures exhibited the nano-stepped surface structure reflecting the sapphire substrate surface. By scanning the AFM tip on the as-deposited glass film in a contact mode and then thermal annealing the film, we could pattern the nano-stepped glass surface at a nanoscale.

FORMATION AND MICROSTRUCTURE OF (105)-ORIENTED EPITAXIAL THIN FILMS OF YBa2Cu3O7-δ

1997 ◽  
Vol 04 (04) ◽  
pp. 679-685
Author(s):  
Y. YANG ◽  
J. GAO ◽  
T. C. CHUI
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Substrate Surface ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Strong Anisotropy ◽  
X Ray ◽  
Transmission Electron ◽  
Stepped Surface ◽  
Means Of Transmission

The formation and microstructure of the YBa 2 Cu 3 O 7-δ thin films grown on (305) SrTiO 3 substrates have been studied by means of transmission electron microscopy, X-ray diffraction analysis and scanning electron microscopy. YBa 2 Cu 3 O 7-δ was epitaxially grown on the stepped surface of such tilted substrates with an angle of 31° between its c axis and the substrate surface normal, forming the (105)-oriented films. A common feature of this kind of films is that small antidomains are nucleated in the initial growing stage. However, the further growth of these antidomains is depressed by the growth of YBa 2 Cu 3 O 7-δ with the desired orientation, leading to the formation of a single domain film. The surface of the (105) YBa 2 Cu 3 O 7-δ films is significantly rougher than that of c axis films but smoother than that of some other tilted films. Strong anisotropy of the transport properties has also been found in the [010] and [Formula: see text] directions of the (105) YBa 2 Cu 3 O 7-δ films.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Enhanced electrochemical properties of Li[Li0.2Mn0.54Ni0.13Co0.13]O2 via lithium boron oxide glass surface treatment

2016 ◽  
Vol 292 ◽  
pp. 66-69 ◽  
Author(s):  
Maohui Bai ◽  
Zhixing Wang ◽  
Xinhai Li ◽  
Huajun Guo ◽  
Zhenjiang He ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Electrochemical Properties ◽  
Boron Oxide ◽  
Glass Surface ◽  
Oxide Glass

Observations on the Growth of YBa2Cu3O7 Thin Films at Very High Laser Fluences

1995 ◽  
Vol 388 ◽  
Author(s):  
Rand R. Biggers. ◽  
M. Grant Norton ◽  
I. Maartense ◽  
T.L. Peterson ◽  
E. K. Moser ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
High Fluences ◽  
Laser Fluences ◽  
High Laser ◽  
High Laser Fluences ◽  
Very High

AbstractThe pulsed-laser deposition (PLD) technique utilizes one of the most energetic beams available to form thin films of the superconducting oxide YBa2Cu3O7 (YBCO). IN this study we examine the growth of YBCO at very high laser fluences (25 to 40 J/cm2); a more typical fluence for PLD would be nearer to 3 J/cm2. the use of high fluences leads to unique film microstructures which, in some cases, appear to be related to the correspondingly higher moveabilities of the adatoms. Films grown on vicinal substrates, using high laser fluences, exhibited well-defined elongated granular morphologies (with excellent transition temperature, Tc, and critical current density, Jc). Films grown on vicinal substrates using off-axis magnetron sputtering, plasma-enhanced metal organic chemical vapor deposition (PE-MOCVD), or PLD at more typical laser fluences showed some similar morphologies, but less well-defined. Under certain growth conditions, using high laser fluences with (001) oriented substrates, the YBCO films can exhibit a mixture of a- and c-axis growth where both crystallographic orientations nucleate on the substrate surface at the same time, and grow in concert. the ratio of a-axis oriented to c-axis oriented grains is strongly affected by the pulse repetition rate of the laser.

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1611-1615 ◽  
Author(s):  
G. CAMPILLO ◽  
L. F. CASTRO ◽  
P. VIVAS ◽  
E. BACA ◽  
P. PRIETO ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Pure Oxygen ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Afm Analysis ◽  
Direct Growth

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic characterization showed good magnetic properties with a PM–FM transition at TC ≈ 262 K.

Sign in / Sign up

Export Citation Format

Share Document