Strain Determination Around Vickers Indentation on Silicon Surface by Raman Spectroscopy

2004 ◽  
Vol 19 (4) ◽  
pp. 1273-1280 ◽  
Author(s):  
Pascal Puech ◽  
François Demangeot ◽  
Paulo Sergio Pizani
Keyword(s):  
Raman Spectroscopy ◽  
Frequency Shift ◽  
Optical Phonon ◽  
Strain Field ◽  
Silicon Surface ◽  
Large Range ◽  
Vickers Indentation ◽  
Micro Raman Spectroscopy ◽  
Strain Determination ◽  
Indentation Strain

We used Raman spectroscopy to characterize indentations on silicon. We focused our attention on the strain field around several indentations made on an (001) oriented silicon wafer with loads ranging from 100 mN to 10 N. Micro-Raman spectroscopy was used for the analysis of the indentation strain field. By multiplying the frequency shift of the optical phonon of silicon by the distance from the center of the fingerprint to the point under investigation, we were able to determine the strained zone extension accurately with the boundary between the strained area and the unperturbed area, which becomes clearly visible. This method allowed us to propose an equation valid over a large range of loads (0.1–10 N), which allowed us to estimate the size of the strained zone. We show that even in the absence of visible defects, the strain field extended to a region relatively far from the imprint in between cracks. The analysis of the radial and lateral cracks gives information where the proposed equations are valid.

Residual strain field in indented GaAs

2003 ◽  
Vol 18 (6) ◽  
pp. 1474-1480 ◽  
Author(s):  
Pascal Puech ◽  
François Demangeot ◽  
Paulo Sergio Pizani ◽  
Samuel Wey ◽  
Chantal Fontaine
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Residual Strain ◽  
Strain Field ◽  
Optical Phonons ◽  
Gaas Sample ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Microscope Images ◽  
The One

This paper presents an optical mean to probe carefully the strain field generated by a microindentation on [111]-oriented GaAs sample, using micro-Raman spectroscopy and microphotoluminescence spectroscopy. Raman and photoluminescence signals recorded from the same point of the sample are directly compared. The frequency shift of the longitudinal and transverse optical phonons was analyzed in great detail, revealing unambiguously the presence of both compressive and tensile strains within the indented area. Outside the indentation fingerprint, the magnitude of strain deduced from luminescence measurements was found to be lower than the one determined by Raman scattering. The Raman spectra revealed significant variations of the optical phonons polarizability with the deformation. Finally, atomic force microscope images of the indented zone aid in the interpretation.

Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy

2014 ◽  
Vol 1693 ◽  
Author(s):  
N. Sugiyama ◽  
M. Yamada ◽  
Y. Urakami ◽  
M. Kobayashi ◽  
T. Masuda ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Frequency Shift ◽  
Uniaxial Stress ◽  
Bending Test ◽  
Raman Shift ◽  
Micro Raman Spectroscopy ◽  
Four Point Bending

ABSTRACTThe correlation of stress in Silicon Carbide (SiC) crystal and frequency shift in micro- Raman spectroscopy was determined by an experimental method. We applied uniaxial stress to 4H- and 6H-SiC single crystal square bar specimen shaped with (0001) and (11-20) faces by four point bending test, under measuring the frequency shift in micro-Raman spectroscopy. The results revealed that the linearity coefficients between stress and Raman shift were -1.96 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (0001) face, -2.08 cm-1/GPa for FTO(2/4)E2 on 4H-SiC (11-20) face and -2.70 cm-1/GPa for FTO(2/6)E2 on 6H-SiC (0001) face. Determination of these coefficients has made it possible to evaluate the residual stress in SiC crystal quantitatively by micro-Raman spectroscopy. We evaluated the residual stress in SiC substrate that was grown in our laboratory by utilizing the results obtained in this study. The result of estimation indicated that the SiC substrate with a diameter of 6 inch remained residual stress as low as ±15 MPa.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Micro-Raman spectroscopy of Shang oracle bone inscriptions

2021 ◽  
Vol 37 ◽  
pp. 102910
Author(s):  
Jhih-Huei Liu ◽  
Weiying Ke ◽  
Ming-chorng Hwang ◽  
Kuang Yu Chen
Keyword(s):  
Raman Spectroscopy ◽  
Micro Raman Spectroscopy

scholarly journals Use of WetSEM® capsules for convenient multimodal scanning electron microscopy, energy dispersive X-ray analysis, and micro Raman spectroscopy characterisation of technetium oxides

2021 ◽  
Author(s):  
D. J. Bailey ◽  
M. C. Stennett ◽  
J. Heo ◽  
N. C. Hyatt
Keyword(s):  
Raman Spectroscopy ◽  
Low Cost ◽  
Powder Materials ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Hazard And Risk ◽  
Sem Imaging ◽  
General User ◽  
532 Nm

AbstractSEM–EDX and Raman spectroscopy analysis of radioactive compounds is often restricted to dedicated instrumentation, within radiological working areas, to manage the hazard and risk of contamination. Here, we demonstrate application of WetSEM® capsules for containment of technetium powder materials, enabling routine multimodal characterisation with general user instrumentation, outside of a controlled radiological working area. The electron transparent membrane of WetSEM® capsules enables SEM imaging of submicron non-conducting technetium powders and acquisition of Tc Lα X-ray emission, using a low cost desktop SEM–EDX system, as well as acquisition of good quality μ-Raman spectra using a 532 nm laser.

Sign in / Sign up

Export Citation Format

Share Document