Residual strain field in indented GaAs

2003 ◽  
Vol 18 (6) ◽  
pp. 1474-1480 ◽  
Author(s):  
Pascal Puech ◽  
François Demangeot ◽  
Paulo Sergio Pizani ◽  
Samuel Wey ◽  
Chantal Fontaine
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Residual Strain ◽  
Strain Field ◽  
Optical Phonons ◽  
Gaas Sample ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Microscope Images ◽  
The One

This paper presents an optical mean to probe carefully the strain field generated by a microindentation on [111]-oriented GaAs sample, using micro-Raman spectroscopy and microphotoluminescence spectroscopy. Raman and photoluminescence signals recorded from the same point of the sample are directly compared. The frequency shift of the longitudinal and transverse optical phonons was analyzed in great detail, revealing unambiguously the presence of both compressive and tensile strains within the indented area. Outside the indentation fingerprint, the magnitude of strain deduced from luminescence measurements was found to be lower than the one determined by Raman scattering. The Raman spectra revealed significant variations of the optical phonons polarizability with the deformation. Finally, atomic force microscope images of the indented zone aid in the interpretation.

Strain Determination Around Vickers Indentation on Silicon Surface by Raman Spectroscopy

2004 ◽  
Vol 19 (4) ◽  
pp. 1273-1280 ◽  
Author(s):  
Pascal Puech ◽  
François Demangeot ◽  
Paulo Sergio Pizani
Keyword(s):  
Raman Spectroscopy ◽  
Frequency Shift ◽  
Optical Phonon ◽  
Strain Field ◽  
Silicon Surface ◽  
Large Range ◽  
Vickers Indentation ◽  
Micro Raman Spectroscopy ◽  
Strain Determination ◽  
Indentation Strain

We used Raman spectroscopy to characterize indentations on silicon. We focused our attention on the strain field around several indentations made on an (001) oriented silicon wafer with loads ranging from 100 mN to 10 N. Micro-Raman spectroscopy was used for the analysis of the indentation strain field. By multiplying the frequency shift of the optical phonon of silicon by the distance from the center of the fingerprint to the point under investigation, we were able to determine the strained zone extension accurately with the boundary between the strained area and the unperturbed area, which becomes clearly visible. This method allowed us to propose an equation valid over a large range of loads (0.1–10 N), which allowed us to estimate the size of the strained zone. We show that even in the absence of visible defects, the strain field extended to a region relatively far from the imprint in between cracks. The analysis of the radial and lateral cracks gives information where the proposed equations are valid.

scholarly journals A Technique for Measuring Microparticles in Polar Ice Using Micro-Raman Spectroscopy

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
Toshimitsu Sakurai ◽  
Hiroshi Ohno ◽  
Shinichiro Horikawa ◽  
Yoshinori Iizuka ◽  
Tsutomu Uchida ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Cross Section ◽  
Chemical Reactions ◽  
Chemical Forms ◽  
Raman Intensity ◽  
Polar Ice ◽  
Micro Raman Spectroscopy ◽  
Sulfate Salts ◽  
Raman Scattering Cross Section

We describe in detail our method of measuring the chemical forms of microparticles in polar ice samples through micro-Raman spectroscopy. The method is intended for solid ice samples, an important point because melting the ice can result in dissociation, contamination, and chemical reactions prior to or during a measurement. We demonstrate the technique of measuring the chemical forms of these microparticles and show that the reference spectra of those salts expected to be common in polar ice are unambiguously detected. From our measurements, Raman intensity of sulfate salts is relatively higher than insoluble dust due to the specific Raman scattering cross-section of chemical forms of microparticles in ice.

Laser-induced modification of amorphous GST225 phase change materials

2019 ◽  
Vol 107 (3) ◽  
pp. 307
Author(s):  
Sergey A. Kozyukhin ◽  
Petr I. Lazarenko ◽  
Yuri V. Vorobyov ◽  
Mikhail S. Savelyev ◽  
Alexander A. Polokhin ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Crystallization Behavior ◽  
Phase Change Materials ◽  
Laser Pulses ◽  
Nanosecond Laser ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Nanosecond Laser Pulses

In this paper, we have studied the crystallization behavior of amorphous GST225 thin films upon irradiation with nanosecond laser pulses. Crystalline and melt-quenched amorphous regions were produced by exposure to laser single or multipulses, and were characterized by the optical microscopy and by the micro-Raman spectroscopy. Transition region between the amorphous and crystalline parts of the laser-modified area was investigated by atomic force microscopy. Using irradiation by single laser pulses with varying fluence, it was verified that crystallization was possible if the fluence is more than 90.4 mJ/cm2.

Mikro-Raman-spektroskopische Charakterisierung von CuInSe2-Dünnfilm-Halbleitern / Micro Raman Spectroscopy of CuInSe2 Thin Films

1993 ◽  
Vol 48 (6) ◽  
pp. 697-704 ◽  
Author(s):  
H. P. Fritz ◽  
E. Pöll
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Solar Cell ◽  
Raman Scattering ◽  
Room Temperature ◽  
Raman Scattering Spectroscopy ◽  
Micro Raman Spectroscopy ◽  
Electrochemically Deposited ◽  
Binary Compounds ◽  
Real Composition

Structural properties for Cu—In—Se thin-films for solar cell applications formed by electrochemical deposition at room temperature were studied using Raman-scattering. Reactions among Cu, In and Se to binary compounds and CuInSe2, respectively, were observed. It is concluded that Raman scattering spectroscopy only at low temperature conditions shows the real composition of the electrochemically deposited Cu—In—Se layer. It was also found by Raman spectroscopy that the CuInSe, phase is formed by annealing as-deposited Cu—In—Se thin films preferentially at temperatures around 400°C under selenium vapour pressure.

Exciton-Phonon Interaction in CuAlS2 Powders

2006 ◽  
Vol 11-12 ◽  
pp. 175-178
Author(s):  
Yuichiro Kuroki ◽  
Minoru Osada ◽  
Ariyuki Kato ◽  
Tomoichiro Okamoto ◽  
Masasuke Takata
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Strong Interaction ◽  
Free Exciton ◽  
Chalcopyrite Structure ◽  
Vibrational Modes ◽  
Optical Phonons ◽  
Phonon Interaction ◽  
Copper Aluminum ◽  
The One

High-resolution photoluminescence (PL) measurement was carried out for copper aluminum disulfide (CuAlS2) powder at 12 K. Several sharp PL lines were observed in the range from 3.580 to 3.320 eV. The emission peaks at photon energies from 3.566 to 3.459 eV were attributed to free-exciton (FE) and bound-excitons (BE). The several weak emissions at below 3.476 eV were clarified to be phonon replicas (PR) by Raman scattering and in the viewpoint of exciton-phonon interaction. We observed the one, two and three-phonon replicas related to E(LO, TO) and B2(LO, TO) vibrational modes in chalcopyrite structure. It was suggested that the strong interaction between excitons and optical phonons took place in obtained CuAlS2 powder.

Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

2010 ◽  
Vol 645-648 ◽  
pp. 607-610 ◽  
Author(s):  
Sushant Sonde ◽  
Filippo Giannazzo ◽  
Jean Roch Huntzinger ◽  
Antoine Tiberj ◽  
Mikael Syväjärvi ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Solid State ◽  
Epitaxial Graphene ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Combined Application ◽  
Atomic Force ◽  
Miscut Angle

Epitaxial graphene was grown on the surface of on-axis and off-axis SiC (0001) by solid state graphitization at high temperatures (2000 °C) in Ar ambient. The effect of the miscut angle on the lateral uniformity of the few layers of graphene (FLG) was investigated by combined application of micro-Raman spectroscopy and Torsion Resonance Conductive Atomic Force Microscopy, the latter method enabling a quantification of the FLG coverage on SiC with submicrometer lateral resolution. While the on-axis samples result in uniform coverage by thin (~ 3 monolayers) FLG, the coverage for off-axis samples is much less uniform, following closely the step bunching morphology of the SiC surface.

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