Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor

2010 ◽  
Vol 96 (1) ◽  
pp. 012105 ◽  
Author(s):  
Hiroki Kondo ◽  
Shinnya Sakurai ◽  
Mitsuo Sakashita ◽  
Akira Sakai ◽  
Masaki Ogawa ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Dielectric Constant ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Praseodymium Oxide ◽  
Metal Organic ◽  
High Dielectric ◽  
Organic Chemical Vapor Deposition

Properties of Pr-based high k dielectric films obtained by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 811 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Roberta G. Toro ◽  
Graziella Malandrino ◽  
Vito Raineri ◽  
Ignazio L. Fragalà
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Morphological Characteristics ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrical Measurements ◽  
Praseodymium Oxide ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe report the results of a recent study on the deposition of praseodymium oxides thin films on silicon substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). A suited Pr(III) β-diketonate precursor has been used as the metal source and the deposition conditions have been carefully selected because of a large variety of possible PrO2−x (x= 0−0.5) phases. Pr2O3 films have been obtained in a hot-wall MOCVD reactor under non oxidising ambient at 750°C deposition temperature. The structural and morphological characteristics of Pr2O3 films have been carried out by X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). Chemical compositional studies have been performed by X- ray photoelectron spectroscopic (XPS) analysis and a fully understanding of the MOCVD process has been achieved. Preliminary electrical measurements point to MOCVD as a reliable growth technique to obtain good quality praseodymium oxide based films.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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