Initial growth mechanism of Yba2Cu3Oycrystal on MgO substrate by liquid-phase epitaxy

2001 ◽  
Vol 16 (10) ◽  
pp. 2947-2958 ◽  
Author(s):  
Katsumi Nomura ◽  
Saburo Hoshi ◽  
Yuichi Nakamura ◽  
Teruo Izumi ◽  
Yuh Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Slope Angle ◽  
Growth Time ◽  
Initial Growth ◽  
Homoepitaxial Growth ◽  
Partial Dissolution ◽  
Mgo Surface ◽  
Mgo Substrate

Initial growth features of Yba2Cu3Oy (YBCO) crystal on an MgO substrate by a liquid-phase epitaxy (LPE) process were investigated and compared with homoepitaxial growth on a YBCO substrate. The partial dissolution of the seed grains in the initial stage of the LPE growth was influenced by the crystallinity of in-plane alignment of the seed grains, which could be explained by the preferential dissolution and growth mechanism. Concurrently, the slope angle of the growth grain varied with growth time. The opposite tendency of the slope angle change between the hetero- and the homoepitaxial growth was observed and could be explained by considering the difference in the step-advancing rates on each interface. It could be understood that the formation of entrapped liquid inclusions was the combination phenomena of both the small step-advancing rate of YBCO crystal on the MgO surface and the roughening of the MgO surface due to the partial dissolution of MgO to the solution.

Growth Mechanism of RE-Ba-Cu-O Crystal by Liquid Phase Epitaxy Process

2000 ◽  
Vol 659 ◽  
Author(s):  
K. Nomura ◽  
S. Hoshi ◽  
X. Yao ◽  
Y. Nakamura ◽  
T. Izumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Slope Angle ◽  
Slow Step ◽  
Initial Stage ◽  
The Difference ◽  
Mgo Surface ◽  
Mgo Substrate ◽  
Opposite Tendency

ABSTRACTGrowth of YBa2Cu3Oy (YBCO) crystals both on the MgO and the YBCO substrates has been investigated in order to clarify the growth mechanism of the liquid phase epitaxy (LPE) process for the coated conductor. It was found that the slope angle of the growth grain varied with growing in the initial stage of the LPE growth. In the case of the MgO substrate, the slope angle increased with laterally growing the crystal. On the other hand, the slope angle decreased with growing the crystal in the case of the YBCO substrate. This phenomenon with the opposite tendency could be explained by considering the difference in the step-advancing rates between on the MgO and the YBCO surfaces. It was found that the deep and steep valley of the LPE grains due to the slow step-advancing rate on the MgO is the origin of the flux trapping inclusions. It is necessary that the seed films should cover the entire MgO surface without undesired orientation grains and impurity particles in order to obtain the high quality LPE layer.

Initial Growth Mechanism of Sm1+xBa2-xCu3Oy Film Prepared by Liquid Phase Epitaxy

1999 ◽  
pp. 745-748
Author(s):  
Akemi Hayashi ◽  
Kazuomi Kakimoto ◽  
Yuichi Ishida ◽  
Teruo Izumi ◽  
Yuh Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Growth mechanism of RE-Ba–Cu–O film on MgO substrate by liquid phase epitaxy

2001 ◽  
Vol 357-360 ◽  
pp. 1377-1381 ◽  
Author(s):  
K. Nomura ◽  
S. Hoshi ◽  
X. Yao ◽  
Y. Nakamura ◽  
T. Izumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Mgo Substrate

Initial growth mechanism of a/b‐axis oriented YBa2Cu3O7−y film prepared by liquid phase epitaxy

1996 ◽  
Vol 68 (14) ◽  
pp. 2002-2004 ◽  
Author(s):  
Tasuku Kitamura ◽  
Izumi Hirabayashi ◽  
Shoji Tanaka ◽  
Yoshihro Sugawara ◽  
Yuichi Ikuhara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Initial growth mechanism of YBCO films in liquid phase epitaxy process

2000 ◽  
Vol 334 (3-4) ◽  
pp. 249-258 ◽  
Author(s):  
K Kakimoto ◽  
Y Sugawara ◽  
T Izumi ◽  
Y Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth ◽  
Ybco Films

scholarly journals Initial Growth Mechanism of YBa2Cu3Oy/MgO Film by Liquid Phase Epitaxy

2001 ◽  
Vol 65 (3) ◽  
pp. 175-178
Author(s):  
Katsumi Nomura ◽  
Saburo Hoshi ◽  
Yuichi Nakamura ◽  
Teruo Izumi ◽  
Yuh Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Growth mechanism of thick c-axis oriented YBa2Cu3O7 − y films prepared by liquid phase epitaxy

1996 ◽  
Vol 158 (1-2) ◽  
pp. 61-67 ◽  
Author(s):  
T. Kitamura ◽  
S. Taniguchi ◽  
Y. Shiohara ◽  
I. Hirabayashi ◽  
S. Tanaka ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy

Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD

2015 ◽  
Vol 821-823 ◽  
pp. 209-212 ◽  
Author(s):  
Kassem Alassaad ◽  
Véronique Soulière ◽  
François Cauwet ◽  
Davy Carole ◽  
Beatrice Doisneau ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Twin Boundary ◽  
Growth Mechanism ◽  
Chemical Nature ◽  
Lateral Expansion ◽  
Growth Step ◽  
Orientation Selection ◽  
Homoepitaxial Growth ◽  
Nucleation Stage ◽  
Growth Experiments

Starting from the previously demonstrated twin-free 3C-SiC growth on 4H-SiC when using Ge pre-deposition treatment, this work focuses on the understanding of the growth mechanism that stands behind this result. Toward this end, short growth experiments were performed to allow the investigation of the nucleation stage. Based on the experimental observations, a mechanism is proposed which involves a Ge-induced transient homoepitaxial growth step followed by 3C nucleation when large terraces are formed by step faceting. Lateral expansion of the 3C islands leads to orientation selection and twin boundary elimination. Similar results can be obtained when applying a Si-based pre-deposition treatment so that the crucial transient homoepitaxial step is promoted in fact by the presence of a liquid phase itself, no by its chemical nature.

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