Study of the effects of low-energy electron bombardment during the chemical vapor deposition of diamond

2001 ◽  
Vol 16 (1) ◽  
pp. 293-295 ◽  
Author(s):  
J. A. Gonzaález ◽  
O. L. Figueroa ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Bombardment ◽  
Low Energy ◽  
Energy Electron ◽  
Ex Situ ◽  
Crystalline Quality ◽  
Growth Stages ◽  
Low Energy Electron

The effects of low-energy electron bombardment during the chemical vapor deposition of diamond were studied. The film growth was monitored in real time with in situ phase-modulated ellipsometry, in order to trigger the electron bombardment at different growth stages. Ex situ Raman spectroscopy and scanning electron microscopy were employed to evaluate the crystalline quality and the morphology of the grown films, respectively. The results indicated that triggering the electron bombardment after high-quality scattered diamond crystallites had formed results in finely grained smoother films of similar diamond yield and crystalline quality as those grown without bombardment. However, the electron bombardment deteriorates the film crystalline quality and the diamond yield when it was triggered from the start of deposition.

Controlling the Diamond Film Morphology by Low-Energy Electron Bombardment

1999 ◽  
Vol 585 ◽  
Author(s):  
J. A. González ◽  
O. L. Figuero ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Diamond Film ◽  
Electron Bombardment ◽  
Low Energy ◽  
Energy Electron ◽  
Ex Situ ◽  
Crystalline Quality ◽  
Diamond Growth ◽  
Film Morphology ◽  
Low Energy Electron

AbstractWe studied the effects of low-energy electron bombardment during diamond growth over the film crystalline quality and morphology. The film growth was monitored via the effective extinction coefficient (k) at 1.96 eV with in situ ellipsometry, in order to determine the developmental stage of the film in real time. Taking advantage of this in situ monitoring, we triggered the electron bombardment over the growing surface at different growth stages and studied the corresponding induced changes in film morphology and crystalline quality. Ex situ Raman spectroscopy and scanning electron microscopy (SEM) were also employed to evaluate the crystalline quality and the morphology of the grown films, respectively. We found that electron bombardment can be used to control the surface morphology of the films (triangular, pyramidal, square, amorphous). The results also indicate that applying the electron bombardment over the diamond film during the whole time of growth is detrimental to its crystalline quality and favors the formation of non-sp3 carbon. However, when the electron bombardment is triggered just after high quality scattered diamond crystallites have formed, the resulting film is of similar quality as those grown without bombardment. Therefore, properly chosen and triggered electron bombardment during diamond growth by chemical vapor deposition (CVD) can be used to control the film morphology while maintaining the film crystalline quality.

Synthesis of Microcrystalline Silicon Films by Low Energy Electron-Beam-Induced Deposition at Cryogenic Temperature

2004 ◽  
Vol 832 ◽  
Author(s):  
Tetsuya Sato ◽  
Kiyokazu Nakagawa ◽  
Yutaka Aoki ◽  
Shouji Sato
Keyword(s):  
Electron Beam ◽  
Cryogenic Temperature ◽  
Chemical Vapor ◽  
Low Energy ◽  
Energy Electron ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
Raman Scattering Spectroscopy ◽  
Semiconductor Thin Films ◽  
Low Energy Electron

ABSTRACTWe have proposed an advanced method for formation of semiconductor thin films at substrates temperatures below 100K. We have synthesized amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) films using low-energy electron-beam-induced-chemical vapor deposition (EBICVD) onto cooled substrates which adsorb source gases (SiH4 or Si2H6) at cryogenic temperature. The temperature dependence on growth rate of the films, hydrogen content and optical constants were investigated. The μc-Si:H could be formed at 40–45 K on SiO2 using He-discharged-EBICVD with SiH4. The crystallinity of silicon was evaluated by Raman scattering spectroscopy and X-ray diffraction.

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

scholarly journals The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 607 ◽  
Author(s):  
R. M. Biefeld ◽  
J. D. Phillips ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Energy Transition ◽  
Low Energy ◽  
Organic Chemical ◽  
Mid Infrared ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Cladding Layers

AbstractWe report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layer superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 µm. The optical properties of the InAsSb/InPSb superlattices revealed an anomalous low energy transition that can be assigned to an antimony-rich, interfacial layer in the superlattice. This low energy transition can be eliminated by introducing a 1.Onm InAs layer between the InAsSb and InPSb layers in the superlattice. An InAsSb/InAs/InPSb/InAs SLS laser was grown on an InAs substrate with AlAs0.16Sb0.844cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 250 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T0 = 39 K, from 80 to 200 K.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers

2017 ◽  
Vol 897 ◽  
pp. 15-18 ◽  
Author(s):  
Philipp Schuh ◽  
Grazia Litrico ◽  
Francesco La Via ◽  
Marco Mauceri ◽  
Peter J. Wellmann
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundaries ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
High Crystalline Quality ◽  
Sublimation Growth

We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.

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