Continuous chemical vapor deposition processing with a moving finite thickness susceptor

2000 ◽  
Vol 15 (2) ◽  
pp. 317-328 ◽  
Author(s):  
Wilson K. S. Chiu ◽  
Yogesh Jaluria
Keyword(s):  
Heat Transfer ◽  
Chemical Vapor Deposition ◽  
Numerical Model ◽  
Deposition Rate ◽  
Residence Time ◽  
Vapor Deposition ◽  
Finite Thickness ◽  
Chemical Vapor ◽  
Design Parameters ◽  
Heating Zone

Chemical vapor deposition (CVD) of thin films onto a moving surface is an important material processing technique for semiconductor fabrication, optical coatings, and many other applications. Continuous CVD processing offers an attractive solution to meet high volume requirements. In this study, the deposition on a finite thickness moving susceptor, considering surface reactions, is numerically investigated. When a susceptor is in motion, the reaction zone residence time and the coupling of conduction heat transfer in the susceptor with convection heat transfer in the gas flow significantly alter the deposition rate and film quality. A model is developed to quantify continuous CVD film production for several important design parameters. The numerical model is validated for the deposition of silicon through comparisons with analytical results and experimental data available in the literature. Films produced by continuous CVD are shown to be strongly dependent on susceptor speed, material selection, and susceptor thickness. Susceptor speed is directly linked to residence time in the reaction region, with lower residence times resulting in less time for reaction and heating, hence reducing growth rates. Increased thickness and susceptor thermal diffusivity alters the thermal energy distribution, thereby reducing the susceptor surface temperature and lowering the deposition rate. These effects may be overcome by increasing the length of the heating zone. Film quality is also influenced by the susceptor temperature, since reaction-controlled deposition typically produces different film structure than deposition under diffusion-controlled conditions. Overall, the results obtained demonstrate the feasibility of employing a moving finite thickness susceptor for CVD processing. A correlation of several operational parameters is also obtained for the film thickness. This may be used for the design and optimization of continuous CVD systems. The numerical model may also be used for considering deposition of other materials.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Theoretical Modeling of Chemical Vapor Deposition of Silicon Carbide in a Hot Wall Reactor

1993 ◽  
Vol 335 ◽  
Author(s):  
Feng Gao ◽  
Ray Y. Lin
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Model Analysis ◽  
Gas Mixture ◽  
Kinetic Rate ◽  
Rate Expression ◽  
Cylindrical Coordinate

AbstractA theoretical model, which describes the coupled hydrodynamics, mass transport and chemical reaction, has been developed to simulate chemical vapor deposition (CVD) of silicon carbide (SiC) from gas mixture of methyltrichlorosilane (MTS), hydrogen and argon in a hot wall reactor. In the model analysis, the governing equations were developed in the cylindrical coordinate, and solved numerically by using a finite difference method. A kinetic rate expression of CVD-SiC deposition from the gas mixture was obtained from this study. The deposition rate has an Arrhenius-type dependence on the deposition temperature and is first order with respect to the MTS concentration. Estimated activation energy is 254 kJ/mol. Predicted deposition rate profiles by the model analysis incorporated with the obtained kinetic rate expression showed excellent agreement with experimental data over a variety of applied deposition conditions.

Synthesis of Carbon Nanotubes on a Moving Substrate by Laser-Induced Chemical Vapor Deposition

2005 ◽  
Author(s):  
Kinghong Kwok ◽  
Wilson K. S. Chiu
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Multi Wall Carbon Nanotubes ◽  
Vapor Deposition Technique ◽  
Synthesis Of Carbon Nanotubes

An open-air laser-induced chemical vapor deposition technique has been successfully used to rapidly deposit pillars of carbon nanotube forest on a moving glass substrate. A CO2 laser is used to heat a traversing fused quartz rod covered with metal particles inside a hydrocarbon environment. Pyrolysis of hydrocarbon precursor gas occurs and subsequently gives rise to the growth of multi-wall carbon nanotubes on the substrate surface. The experimental results indicate that nanotube growth kinetics and microstructure are strongly dependent on the experimental parameters such as laser power. The typical deposition rate of carbon nanotubes achieved in this study is over 50 μm/s, which is relatively high compared to existing synthesis techniques. At high power laser irradiation, carbon fibers and carbon film are formed as a result of excessive formation of amorphous carbon on the substrate. High-resolution transmission and scanning electron microscopy, and x-ray energy-dispersive spectrometry are used to investigate the deposition rate, microstructure and chemical composition of the catalytic surface and the deposited carbon nanotubes.

Decrease in Deposition Rate and Improvement of Step Coverage by CF4Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films

2000 ◽  
Vol 39 (Part 1, No. 1) ◽  
pp. 330-336 ◽  
Author(s):  
Sang Woo Lim ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
Hiroshi Komiyama
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Step Coverage

Preparation And Properties Of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 381 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Parallel Plate ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Source Power ◽  
Amorphous Carbon Films

AbstractFluorinated amorphous carbon films are proposed as low dielectric constant interlayer dielectrics for ULSI circuits. The films are deposited by plasma enhanced chemical vapor deposition with CH4, CF4 and C2F6 in a parallel-plate rf (13.56 MHz) reactor and a helicon wave reactor. In a parallel-plate reactor, the dielectric constant of the amorphous carbon films deposited with CH4 increases with increase in rf power. Addition of CF4 to CH4 reduces the dielectric constant to 2.1 and raises the deposition rate. However etching reaction occurs with high CF4/CH4 ratios. No film grows with only CF4. XPS measurement reveals that the F atoms are introduced into the amorphous carbon films. Helicon reactor has higher plasma density and is expected to achieve higher deposition rate for productive use. In this reactor, fluorinated amorphous carbon films without hydrogen content can be obtained with only CF4 and C2F6 gases. The growth rate of the films reaches 0.3 μ/min with C2F6 and 0.15 μ/min with CF4 at a source power of 2 kW and a gas flow rate of 100 sccm. With heating up to 300°C in a vacuum for 1 hour, the thickness of the films deposited with C2F6 does not shrink while that of films with CF4 shrinks.

Sign in / Sign up

Export Citation Format

Share Document