Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides

MRS Advances ◽  
2020 ◽  
Vol 5 (31-32) ◽  
pp. 1671-1679 ◽  
Author(s):  
Yuta Arata ◽  
Hiroyuki Nishinaka ◽  
Kazuki Shimazoe ◽  
Masahiro Yoshimoto
Keyword(s):  
Thin Films ◽  
Visible Light ◽  
Growth Temperature ◽  
Light Transmission ◽  
Plasma Oscillation ◽  
Chemical Vapor ◽  
Infrared Region ◽  
Epitaxial Relationship ◽  
Sn Doping ◽  
Synthetic Mica

AbstractBendable p-type NiO and n-type In2O3 thin films were epitaxially grown on synthetic mica using mist chemical vapor deposition. It was found that at a growth temperature of 400 °C, epitaxially grown cubic (111) NiO thin films developed twin rotational domains, and the epitaxial relationship between each domain and the substrate was (111) NiO [1-10] or [10-1] || (001) synthetic mica [100]. In the visible light region, the epitaxial NiO thin films showed high transparencies, and their cut-offs appeared in the UV region. Additionally, at a growth temperature of 500 °C, cubic (111) In2O3 thin films with and without Sn doping were epitaxially grown on synthetic mica. As a result of the plasma oscillation of free carriers, Sn-doped In2O3 thin films exhibited reflection characteristics in the infrared region, while maintaining their visible light transmission characteristics. Furthermore, compared with non-doped In2O3, Sn doping decreased the sheet resistance by two digits.

Effect of Growth Temperature on Cobalt-Doped TiO2 Thin Films Deposited on Si (100) Substrate by MOCVD Technique

2014 ◽  
Vol 896 ◽  
pp. 192-196 ◽  
Author(s):  
Aip Saripudin ◽  
H. Saragih ◽  
Khairurrijal ◽  
Khairurrijal ◽  
Pepen Arifin
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Anatase Phase ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Vapor Deposition Technique ◽  
Metal Organic ◽  
Titanium Dioxide Thin Films ◽  
Organic Chemical Vapor Deposition

Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.

Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition

2002 ◽  
Vol 414 (2) ◽  
pp. 170-174 ◽  
Author(s):  
B.S. Li ◽  
Y.C. Liu ◽  
Z.Z. Zhi ◽  
D.Z. Shen ◽  
Y.M. Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Thin Films

Crystal Structure of Non-Doped and Sn-Doped α-(GaFe)2O3 Thin Films.

2013 ◽  
Vol 1494 ◽  
pp. 147-152 ◽  
Author(s):  
Kentaro Kaneko ◽  
Kazuaki Akaiwa ◽  
Shizuo Fujita
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Sn Doping ◽  
Sapphire Substrates ◽  
Wide Range

ABSTRACTCorundum structured α-(GaFe)2O3 alloy thin films were obtained on c-plane sapphire substrates by the mist chemical vapor deposition method. Wide range of X-ray diffraction 2θ/θ scanning measurements indicated that these crystals were epitaxially grown on c-plane sapphire substrates and these are no other crystal oriented phase. The cross-sectional and plane-view transmission electron microscope images showed the growth along the c-axis of α-(GaFe)2O3 thin films on sapphire substrates, forming joint of columnar structure. The non-doped α-(GaFe)2O3 thin films showed ferromagnetic properties at 300 K, though the origin of ferromagnetism still remained unresolved. In order to enhance the spin-carrier interaction, Sn doped α-(GaFe)2O3 alloy thin films were fabricated on c-plane sapphire substrates. X-ray diffraction 2θ/θ and ω scanning measurement results indicated that the highly-crystalline films were epitaxially grown on substrates in spite of the Sn-doping.

Microstructure of thin film La0.5Sr0.5CoO3 electrode for microelectronics applications

1995 ◽  
Vol 53 ◽  
pp. 450-451
Author(s):  
Z. L. Wang ◽  
Jiming Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Random Access ◽  
Chemical Vapor ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Film ◽  
Epitaxial Relationship ◽  
Lattice Image ◽  
Ferroelectric Capacitor ◽  
Mocvd Technique

Increasing circuit densities in dynamic random access memories (DRAMs) is one of the major interests in microelectronics research. In a ferroelectric capacitor memory, conducting electrodes must make intimate and ohmic contact to both sides of the ferroelectric thin film. The bottom electrode serves as the substrate during growth and the top electrode is deposited on top of the ferroelectric film. Single crystalline La0.5Sr0.5CoO3 (LSCO) thin films, which are conductive and low electrical resistivity, have recently grown on both sides of Pb-Zr-Ti-O (PZT) ferroelectric film, which has shown a great potential for making fatigue-free small thickness storage capacitors. The present paper reports the microstructure studies of the LSCO thin films grown on MgO(00l) and LaAlO3(100) (LAO) substrates by the metalorganic chemical vapor deposition (MOCVD) technique.Cross-section specimens were made to examine the structure of the film and its relationship with the substrate. Select-area electron diffraction (SAD) and high-resolution lattice image show that the LSCO film has an epitaxial relationship with the MgO/LAO substrate.

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