Growth-temperature-dependent coalescence determines structural phase of mist-chemical-vapor-deposition-grown SnO2 thin films

2018 ◽  
Vol 124 (12) ◽  
pp. 125303 ◽  
Author(s):  
Daisuke Kan ◽  
Yasuyuki Niwa ◽  
Tomoyuki Koganezawa ◽  
Yuichi Shimakawa
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Structural Phase ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Sno2 Thin Films

Structural, morphological, optical and electrical properties of Sb-doped SnO2 thin films obtained by aerosol assisted chemical vapor deposition

2017 ◽  
Vol 638 ◽  
pp. 22-27 ◽  
Author(s):  
A. Heiras-Trevizo ◽  
P. Amézaga-Madrid ◽  
L. Corral-Bustamante ◽  
W. Antúnez-Flores ◽  
P. Pizá Ruiz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Sno2 Thin Films

Phase stability of epitaxial KTaxNb1−xO3 thin films deposited by metalorganic chemical vapor deposition

2003 ◽  
Vol 18 (1) ◽  
pp. 106-110 ◽  
Author(s):  
B. M. Nichols ◽  
B. H. Hoerman ◽  
J-H. Hwang ◽  
T. O. Mason ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Phase Stability ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Structural Phase ◽  
Chemical Vapor ◽  
Rhombohedral Phase ◽  
Metalorganic Chemical

The phase stability of epitaxial KTaxNb1−xO3 (0 ≤ x ≤ 1) thin films, with compositions over the entire solid solution range, was investigated. KTaxNb1−xO3 thin films were deposited on (100) MgAl2O4 substrates by metalorganic chemical vapor deposition. Films with compositions x ≤ 0.30 were orthorhombic, as determined by x-ray diffraction. Dielectric measurements at room temperature indicated the presence of morphotropic phase boundaries at x = 0.30 and at x = 0.74. Temperature-dependent measurements of the dielectric constant for KNbO3 from 80 to 800 K indicated three structural phase transitions at 710, 520, and 240 K. For intermediate compositions, a decrease in the Curie and tetragonal–orthorhombic transition temperatures was observed with increasing Ta atomic percent, similar to the bulk phase equilibrium. In contrast to bulk materials, an increase in the orthorhombic–rhombohedral transition temperature with increasing x was observed for the films, resulting in the stabilization of a rhombohedral phase at room temperature for compositions 0.45 ≤ x ≤ 0.73. Differences between the phase stability for the thin films and bulk were attributed to lattice misfit strain.

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