Calculation of the band structure, carrier effective mass, and the optical absorption properties of GaSbBi alloys

2019 ◽  
Vol 125 (7) ◽  
pp. 075705 ◽  
Author(s):  
Subhasis Das ◽  
M. K. Bhowal ◽  
S. Dhar
Keyword(s):  
Optical Absorption ◽  
Band Structure ◽  
Effective Mass ◽  
Absorption Properties ◽  
Carrier Effective Mass

Lattice-Mismatch Strain and Confinement in Nanoscale Si/SiO2 Structures Fabricated Using Thermal Oxidation

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 351-357 ◽  
Author(s):  
Erin I. Vaughan ◽  
Clay S. Mayberry ◽  
Danhong Huang ◽  
Ashwani K. Sharma
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Thermal Oxidation ◽  
Lattice Mismatch ◽  
Hole Transport ◽  
Bandgap Energy ◽  
Transient Time ◽  
Mismatch Strain ◽  
Carrier Effective Mass ◽  
Order Of Magnitude

ABSTRACTThe behavior of electron and hole transport in semiconductor materials is influenced by lattice-mismatch at the interface. It is well known that carrier scattering in a confined region is dramatically reduced. In this work, we studied the effects of coupling both the strain and confinement simultaneously. We report on the fabrication and characterization of nanoscale planar, wall-like, and wire-like Si/SiO2 structures. As the Si nanostructure dimensions were scaled down to the quantum regime by thermal oxidation of the Si, changes to the band structure and carrier effective mass were observed by both optical and electrical techniques. Transient-time response measurements were performed to examine the carrier generation and recombination behavior as a function of scaling. Signal rise times decreased for both carrier types by an order of magnitude as Si dimensions were reduced from 200 to 10 nm, meaning that the carrier velocity is increasing with smaller scale structures. This result is indicative of decreased Si bandgap energy and carrier effective mass. Photoluminescence measurements taken at 50K showed changes in the PL response peak energies, which illustrates changes in the band structure, as the Si/SiO2 dimensions are scaled.

scholarly journals Effect of Se Doping on the Electronic Band Structure and Optical Absorption Properties of Single Layer MoS2

2016 ◽  
Vol 32 (12) ◽  
pp. 2905-2912 ◽  
Author(s):  
Gang LI ◽  
◽  
Min-Qiang CHEN ◽  
Shi-Xiong ZHAO ◽  
Peng-Wei LI ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Single Layer ◽  
Absorption Properties ◽  
Electronic Band ◽  
Se Doping

scholarly journals THE EFFECT OF STRAIN ON THE EXCITON SPECTRUM OF GERMANIUM

1965 ◽  
Vol 43 (1) ◽  
pp. 12-27 ◽  
Author(s):  
A. M. Glass
Keyword(s):  
Optical Absorption ◽  
Band Structure ◽  
Effective Mass ◽  
Absorption Edge ◽  
Energy Gap ◽  
Applied Strain ◽  
Binding Energies ◽  
Direct Transition ◽  
Mass Approximation ◽  
Exciton Spectrum

The intensity of optical absorption, near the absorption edge in germanium, is examined as a function of strain applied to the lattice at 90 °K. The results are interpreted in terms of the change of the band structure of the lattice with applied strain. The absorption edge in unstrained germanium shows a single sharp peak due to direct-transition exciton formation at k = 0, whereas the edge in the strained specimens shows two exciton peaks. The peak positions vary linearly with both compressional and tensional strain up to the maximum strains applied (0.1% deformation). The exciton binding energies in the strained germanium lattice, calculated within the effective mass approximation, are approximately equal and independent of the magnitude of the strain. The separation of the peaks gives for the shear deformation potentials the values |b| = (2.7 ± 0.3) eV/unit (100) shear and |d| = (4.7 ± 0.5) eV/unit (111) shear. The positions of the peaks give the shift of the energy gap as −(10.3 ± 1) eV/unit dilation.Lattice imperfections are found to have no effect on the interpretation of the results.

Longitudinal effective mass and band structure of quasiperiodic Fibonacci superlattices

1999 ◽  
Vol 59 (3) ◽  
pp. 2057-2062 ◽  
Author(s):  
A. Bruno-Alfonso ◽  
F. J. Ribeiro ◽  
A. Latgé ◽  
L. E. Oliveira
Keyword(s):  
Band Structure ◽  
Effective Mass

Defects in Divided Zinc−Copper Aluminate Spinels:  Structural Features and Optical Absorption Properties†

2007 ◽  
Vol 46 (10) ◽  
pp. 4067-4078 ◽  
Author(s):  
Anne Le Nestour ◽  
Manuel Gaudon ◽  
Gérard Villeneuve ◽  
Marco Daturi ◽  
Ronn Andriessen ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Structural Features ◽  
Absorption Properties ◽  
Copper Aluminate

scholarly journals Optical absorption properties of Ge2–44 and P-doped Ge nanoparticles

2017 ◽  
Vol 140 ◽  
pp. 148-158 ◽  
Author(s):  
Wei Qin ◽  
Wen-Cai Lu ◽  
Li-Zhen Zhao ◽  
K.M. Ho ◽  
C.Z. Wang
Keyword(s):  
Optical Absorption ◽  
Absorption Properties
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