scholarly journals Functionalized Block-Copolymer Templates for Synthesis and Shape Control of Quantum Dots

MRS Advances ◽  
2018 ◽  
Vol 3 (41) ◽  
pp. 2429-2433
Author(s):  
Brian Billstrand ◽  
Kaifu Bian ◽  
Casey Karler ◽  
Hongyou Fan
Keyword(s):  
Quantum Dots ◽  
Block Copolymer ◽  
Quantum Dot ◽  
Charge Transport ◽  
Shape Control ◽  
Synthesis Method ◽  
Size Control ◽  
Semiconductor Materials ◽  
Cds Qds ◽  
Shape And Size

ABSTRACTA new quantum dot synthesis method based on metallic-block copolymer precursors was developed. The synthesis produced CdS QDs assembled into chains. This method provides a new model for the study of 1D QD chains to determine its effect on charge transport and optoelectronic coupling. This synthesis method was readily extended to other semiconductor materials including PbS and perovskites producing QDs of various shapes. It evidenced further promise of this synthesis method to assist in the assembly, shape and size control of various nanomaterials

Core–shell ZnSe–CdSe quantum dots: a facile approach via decomposition of cyclohexeno-1,2,3-selenadiazole

RSC Advances ◽  
2014 ◽  
Vol 4 (34) ◽  
pp. 17526-17532 ◽  
Author(s):  
Sreenu Bhanoth ◽  
Priyesh V. More ◽  
Aditi Jadhav ◽  
Pawan K. Khanna
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Synthesis Method ◽  
Core Shell ◽  
Cdse Quantum Dots ◽  
First Time

For the first time ever cyclohexeno-1,2,3-selenadiazole (SDZ) has been employed for the synthesis of core–shell ZnSe–CdSe quantum dots thus promoting an eco-friendly and reasonably less toxic synthesis method for such quantum dot hetero-structures.

PHOTO-IRRADIATION EFFECTS ON PREPARATION OF COLLOIDAL QUANTUM DOTS AND THEIR SURFACE MODIFICATION

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3829-3832 ◽  
Author(s):  
D. KIM ◽  
N. TERATANI ◽  
K. MIZOGUCHI ◽  
H. NISHIMURA ◽  
M. NAKAYAMA
Keyword(s):  
Quantum Dots ◽  
Surface Modification ◽  
Size Distribution ◽  
Size Control ◽  
Band Edge Emission ◽  
Irradiation Effects ◽  
Edge Emission ◽  
Distribution Width ◽  
Cds Qds ◽  
Pbs Quantum Dots

We have investigated the possibility of size control of CdS and PbS quantum dots (QDs) with a narrow size distribution and the influence of the surface modification of the dots on their luminescence properties. The reduction of the size-distribution width of the CdS QDs grown in polyvinylpyrrolidone or polyvinyl alcohol solutions was succeeded by a size-selective photoetching. We controlled the size of the CdS QDs with the narrow distribution by changing the initial condition of the sample preparation and the irradiation-light energy. The QDs of PbS were grown with the different disperse agents and growth temperature. The band-edge emission is strongly activated by the surface modification of the CdS QDs.

Silicon Single-Electron Pump and Turnstile: Interplay with Crystalline Imperfections

2005 ◽  
Vol 864 ◽  
Author(s):  
Yukinori Ono ◽  
Akira Fujiwara ◽  
Yasuo Takahashi ◽  
Hiroshi Inokawa
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Quantum Dot ◽  
Size Control ◽  
Cmos Technology ◽  
Error Rates ◽  
Research Field ◽  
Localized States ◽  
Single Electron ◽  
Single Electron Transfer

AbstractThe single-electron device (SED), which has quantum dot(s), or island(s) in its core, enables the control of electron motion on the level of an elementary charge. The single-electron pump and turnstile are members of the SED family and enable single-electron transfer synchronized with the gate clock. They have the potential for extremely low error rates of electron transfer and are thus expected to be building-block devices for future information processing and electrical metrology. We have been pursuing the fabrication of Si-based SEDs using CMOS technology with the help of electron-beam lithography and have recently demonstrated a Si single-electron pump and turnstile. They are composed of one Si quantum dot and two tiny MOS gates and have dramatically increased the operation temperatures, which opens up the possibility of the practical use of the pump and turnstile.Another path to realizing single-electron transfer, which we will discuss here, might be to use a localized state in the Si bandgap instead of quantum dots. The localized states could in principle be donor/acceptor levels or any other states created by crystalline imperfections. They are free from the problem of the critical size control of the quantum dots, which might lead to a new era of single-electronics in combination with the rapidly developing research field of “dopant engineering”.

Improving the performance of quantum dot sensitized solar cells through CdNiS quantum dots with reduced recombination and enhanced electron lifetime

2016 ◽  
Vol 45 (20) ◽  
pp. 8447-8457 ◽  
Author(s):  
Chandu V. V. M. Gopi ◽  
Mallineni Venkata-Haritha ◽  
Hyunwoong Seo ◽  
Saurabh Singh ◽  
Soo-Kyoung Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Charge Recombination ◽  
Electron Lifetime ◽  
Cds Qds ◽  
Sensitized Solar Cells

Ni2+ doped CdS QDs in QDSSCs can suppress charge recombination, prolong the electron lifetime and improve the PCE of the cell.

White Light Emitting CdS Quantum Dot Devices Coated with Layers of Graphene Carbon Quantum Dots

MRS Advances ◽  
2020 ◽  
Vol 5 (63) ◽  
pp. 3337-3343
Author(s):  
O. Deodanes ◽  
J. C. Molina ◽  
C. Violantes ◽  
D. Pleitez ◽  
J. Cuadra ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
White Light ◽  
Polyester Resin ◽  
Uv Light ◽  
Resin Matrix ◽  
Light Emitting ◽  
Quenching Effect ◽  
Cds Qds ◽  
Low Efficiency

AbstractCadmium sulfide quantum dots (CdS QDs) are semiconductor nanoparticles having sizes in the order of nanometers. They are materials that have outstanding properties for down conversion applications. These nanostructures have been used in the fabrication of white light emitting diodes (WLEDs) in the last years. However, inhomogeneous deposition of CdS QD conversion materials allows unwanted UV light escape. In addition, low efficiency due to strong self-quenching effect, incompatibility between CdS QD solution/crystal polyester resin matrix and reabsorption are common problems that need to be solved. In this work, we try to address the incompatibility between the CdS QD solution/crystal polyester resin matrix by using a solvent exchange procedure. To block the unwanted UV-light escape, we coated our devices with a mixture of graphene carbon quantum dot (GCQD) solution/crystal polyester resin matrix. The QDs and the WLED prototypes were characterized by absorption and photoluminescence (PL) spectroscopy. The QDs embedded in the matrix shown a good homogeneous dispersion. On the other hand, the mixture shown a rapid solidification. These facts indicate a good compatibility between the CdS QDs and the crystal polyester resin. We also observed a considerable reduction of unwanted near UV-light. White light emission from WLED devices with common crystal polyester resin and low-cost materials has been achieved.

Efficient quantum-dot light-emitting diodes using ZnS–AgInS2 solid-solution quantum dots in combination with organic charge-transport materials

2020 ◽  
Vol 116 (9) ◽  
pp. 093302 ◽  
Author(s):  
Genichi Motomura ◽  
Kei Ogura ◽  
Tatsuya Kameyama ◽  
Tsukasa Torimoto ◽  
Taro Uematsu ◽  
...  
Keyword(s):  
Solid Solution ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Charge Transport ◽  
Light Emitting Diodes ◽  
Light Emitting

Evolution of the Shape and Size of Ingaas Selforganized Quantum Dots

1999 ◽  
Vol 583 ◽  
Author(s):  
Qianghua Xie ◽  
J. L. Brown ◽  
R. L. Jones ◽  
J. E. Van Nostrand
Keyword(s):  
Quantum Dots ◽  
Aspect Ratio ◽  
Quantum Dot ◽  
Inhomogeneous Broadening ◽  
Lateral Size ◽  
Deposition Technique ◽  
Shape Transformation ◽  
Vertically Aligned ◽  
Line Widths ◽  
Shape And Size

AbstractWe have found a shape transformation of InGaAs quantum dots formed via a fractional monolayer deposition technique on GaAs (001) surfaces. This is evidenced by the bimodal quantum dot height (peaked at 8.5 nm and 14.5 nm) and aspect ratio (peaked at 0.18 and 0.26) distributions. The lateral size, height, and aspect ratio all become convergent, suggesting a simultaneous quantum dot size equalization and shape stabilization. Photoluminescence peaks red shift as a consequence of dot growth, and their line-widths become smaller due to dot shape stabilization and size equalization. A record low inhomogeneous broadening of 18.4 meV at a wavelength of 1180 nm (4 K) is obtained for vertically-aligned, shape-stabilized, and size-equalized InGaAs dots.

Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

2010 ◽  
Vol 22 (5) ◽  
pp. 055703 ◽  
Author(s):  
W Lu ◽  
M Bozkurt ◽  
J G Keizer ◽  
T Rohel ◽  
H Folliot ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Control ◽  
Shape And Size

Multicolor Emission of Hybrid Block Copolymer-Quantum Dot Microspheres by Controlled Spatial Isolation of Quantum Dots

Small ◽  
2013 ◽  
Vol 9 (16) ◽  
pp. 2667-2672 ◽  
Author(s):  
Kang Hee Ku ◽  
Minsoo P. Kim ◽  
Kwanyeol Paek ◽  
Jae Man Shin ◽  
Sunhaeng Chung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Block Copolymer ◽  
Quantum Dot ◽  
Spatial Isolation
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