White Light Emitting CdS Quantum Dot Devices Coated with Layers of Graphene Carbon Quantum Dots

MRS Advances ◽  
2020 ◽  
Vol 5 (63) ◽  
pp. 3337-3343
Author(s):  
O. Deodanes ◽  
J. C. Molina ◽  
C. Violantes ◽  
D. Pleitez ◽  
J. Cuadra ◽  
...  

AbstractCadmium sulfide quantum dots (CdS QDs) are semiconductor nanoparticles having sizes in the order of nanometers. They are materials that have outstanding properties for down conversion applications. These nanostructures have been used in the fabrication of white light emitting diodes (WLEDs) in the last years. However, inhomogeneous deposition of CdS QD conversion materials allows unwanted UV light escape. In addition, low efficiency due to strong self-quenching effect, incompatibility between CdS QD solution/crystal polyester resin matrix and reabsorption are common problems that need to be solved. In this work, we try to address the incompatibility between the CdS QD solution/crystal polyester resin matrix by using a solvent exchange procedure. To block the unwanted UV-light escape, we coated our devices with a mixture of graphene carbon quantum dot (GCQD) solution/crystal polyester resin matrix. The QDs and the WLED prototypes were characterized by absorption and photoluminescence (PL) spectroscopy. The QDs embedded in the matrix shown a good homogeneous dispersion. On the other hand, the mixture shown a rapid solidification. These facts indicate a good compatibility between the CdS QDs and the crystal polyester resin. We also observed a considerable reduction of unwanted near UV-light. White light emission from WLED devices with common crystal polyester resin and low-cost materials has been achieved.

2014 ◽  
Vol 2 (46) ◽  
pp. 9800-9804 ◽  
Author(s):  
Namhun Kim ◽  
Jongho Lee ◽  
Hyuncheol An ◽  
Changhyun Pang ◽  
Sung Min Cho ◽  
...  

White-light emitting single compounds were synthesized by grafting blue-fluorescent molecules onto yellow emitting CdSe/ZnS quantum dots and white light emitting diodes were demonstrated. Facile adjustment of color temperature was also demonstrated by controlling the size of quantum dots and the amount of grafted organic blue-emitting molecules.


2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.


2017 ◽  
Vol 29 (37) ◽  
pp. 1702910 ◽  
Author(s):  
Zifei Wang ◽  
Fanglong Yuan ◽  
Xiaohong Li ◽  
Yunchao Li ◽  
Haizheng Zhong ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Dongdong Yan ◽  
Qionghua Mo ◽  
Shuangyi Zhao ◽  
Wensi Cai ◽  
Zhigang Zang

With a high photoluminescence quantum yield (PLQY) being able to exceed 90% for those prepared by hot injection method, CsPbBr3 quantum dots (QDs) have attracted intensive attentions for white light-emitting...


2021 ◽  
Vol 52 (1) ◽  
pp. 953-956
Author(s):  
Tatsuya Ryowa ◽  
Yusuke Sakakibara ◽  
Tadashi Kobashi ◽  
Keisuke Kitano ◽  
Masaya Ueda ◽  
...  

2021 ◽  
Vol 118 (15) ◽  
pp. 153102
Author(s):  
Xifang Chen ◽  
Wenhui Wu ◽  
Wenxia Zhang ◽  
Ziye Wang ◽  
Zhenjin Fu ◽  
...  

2012 ◽  
Vol 51 ◽  
pp. 09MH03
Author(s):  
Byoung Wook Kwon ◽  
Dong Ick Son ◽  
Dong-Hee Park ◽  
Heon-Jin Choi ◽  
Won-Kook Choi

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