Modeling charge transport in quantum dot light emitting devices with NiO and ZnO transport layers and Si quantum dots

2013 ◽  
Vol 114 (4) ◽  
pp. 044507 ◽  
Author(s):  
Brijesh Kumar ◽  
Stephen A. Campbell ◽  
P. Paul Ruden
Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.


2013 ◽  
Vol 44 ◽  
pp. 160-162 ◽  
Author(s):  
Christian Ippen ◽  
Tonino Greco ◽  
Armin Wedel ◽  
Yohan Kim ◽  
Jiwan Kim ◽  
...  

2020 ◽  
Vol 15 (11) ◽  
pp. 1364-1373
Author(s):  
Iman E. Shaaban ◽  
Ahmed S. Samra ◽  
Bedir Yousif ◽  
N. A. Alghamdi ◽  
Shamia El-Sherbiny ◽  
...  

The present search handles the blue light emission investigation of hybrid quantum dots organic light-emitting devices. The emissions at 445 nm and 460 nm have been examined for microcavity hybrid quantum dot organic light-emitting devices (QD-OLED) upon quantum dots of CdS and CdSe. External light emissions have been evaluated through a numerical model based on the transfer matrix for electromagnetic plane waves. The devices' optical properties are investigated based on internal reflectance and cavity length by considering the architecture consisting of multilayers thin-film structures. The overall performance of the light-emitting devices with emission at 445 nm showed an improvement of the enhancement factor and narrowing outcoupling emission relative to the devices with emission at 460 nm. Besides, the light-emitting devices based on CdS QDs revealed better performance relative to the devices based on CdSe QDs.


2020 ◽  
Vol 116 (9) ◽  
pp. 093302 ◽  
Author(s):  
Genichi Motomura ◽  
Kei Ogura ◽  
Tatsuya Kameyama ◽  
Tsukasa Torimoto ◽  
Taro Uematsu ◽  
...  

2017 ◽  
Vol 5 (4) ◽  
pp. 953-959 ◽  
Author(s):  
Dan Bi Choi ◽  
Sohee Kim ◽  
Hee Chang Yoon ◽  
Minji Ko ◽  
Heesun Yang ◽  
...  

In this study, we report the creation of heterostructured alloy core/shell Ag-In-Zn-S (AIZS)/ZnS quantum dots (QDs) by sequential core-forming, alloying and shelling processes and the fabrication of color-tunable QD light-emitting diodes (QLEDs) with a standard device architecture.


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