Effect of Displacement Damage on Tantalum Oxide Resistive Memory

MRS Advances ◽  
2017 ◽  
Vol 2 (52) ◽  
pp. 3011-3017 ◽  
Author(s):  
Joshua S. Holt ◽  
Karsten Beckmann ◽  
Zahiruddin Alamgir ◽  
Jean Yang-Scharlotta ◽  
Nathaniel C. Cady
Keyword(s):  
Flash Memory ◽  
Ion Beam ◽  
Tantalum Oxide ◽  
High Resistance State ◽  
Radiation Environment ◽  
Resistive Memory ◽  
Case Scenario ◽  
Displacement Damage ◽  
Worst Case ◽  
Resistance State

ABSTRACTThe radiation environment of space poses a challenge for electronic systems, in particular flash memory, which contains multiple radiation-sensitive parts. Resistive memory (RRAM) devices have the potential to replace flash memory, functioning as an inherently radiation resistant memory device. Several studies indicate significant radiation resistance in RRAM devices to a broad range of radiation types and doses. In this study, we focus on the effect of displacement damage on tantalum oxide-based RRAM devices, as this form of damage is likely a worst-case scenario. An Ar+ (170 keV) ion beam was used to minimize any contribution from ionization damage, maximizing the effect of displacement damage. Fluence levels were chosen to generate enough oxygen vacancies such that devices in the high resistance state (HRS) would likely switch to the low resistance state (LRS). More than half of devices tested at the highest fluence level (1.43E13 ions/cm2) switched from HRS to LRS. The devices were then switched for 50 set/reset cycles, after which the radiation-induced resistance shift disappeared. These results suggest that device switching may mitigate radiation damage by accelerating oxygen vacancy-interstitial recombination.

Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface

2015 ◽  
Vol 15 (10) ◽  
pp. 7564-7568 ◽  
Author(s):  
Abbas Yawar ◽  
Mi Ra Park ◽  
Quanli Hu ◽  
Woo Jin Song ◽  
Tae-Sik Yoon ◽  
...  
Keyword(s):  
Low Voltage ◽  
Tantalum Oxide ◽  
High Resistance State ◽  
Amorphous Layer ◽  
Memory Device ◽  
Ohmic Conduction ◽  
Oxide Interface ◽  
Bipolar Switching ◽  
Switching Phenomenon ◽  
Resistance State

To investigate the nature of the switching phenomenon at the metal-tantalum oxide interface, we fabricated a memory device in which a tantalum oxide amorphous layer acted as a switching medium. Different metals were deposited on top of the tantalum oxide layer to ensure that they will react with some of the oxygen contents already present in the amorphous layer of the tantalum oxide. This will cause the formation of metal oxide (MOx) at the interface. Two devices with Ti and Cu as the top electrodes were fabricated for this purpose. Both devices showed bipolar switching characteristics. The SET and RESET voltages for the Ti top electrode device were ∼+1.7 V and ∼−2 V, respectively, whereas the SET and RESET voltages for the Cu top electrode device were ∼+0.9 V and ∼−0.9 V, respectively. In the high-resistance state (HRS) conduction, the mechanisms involved in the devices with Ti and Cu top electrodes were space-charge limited conduction (SCLC) and ohmic, respectively. On the other hand, in the low-resistance state (LRS), the Ti top electrode device undergoes SCLC at a high voltage and ohmic conduction at a low voltage, and the Cu top electrode again undergoes ohmic conduction. From the consecutive sweep cycles, it was observed that the SET voltage gradually decreased with the sweeps for the Cu top electrode device, whereas for the Ti top electrode device, the set voltage did not vary with the sweeps.

Ozone and life on the Archaean Earth

2007 ◽  
Vol 365 (1856) ◽  
pp. 1889-1901 ◽  
Author(s):  
Charles S Cockell ◽  
John A Raven
Keyword(s):  
Uv Radiation ◽  
Fossil Record ◽  
Radiation Flux ◽  
Radiation Environment ◽  
Trace Gas ◽  
Early Earth ◽  
Case Scenario ◽  
Worst Case ◽  
Colonization Of Land ◽  
Early Land

The trace gas ozone, produced in the present-day stratosphere, acts as a screen for UV radiation between 195 and approximately 290 nm, depending on its column abundance. On the anoxic Archaean Earth, such an ozone screen would not have existed. Although the presence of other screens, such as an organic haze, might have ameliorated the UV radiation flux, even assuming the worst-case scenario (no UV screen), it can be shown that early land masses and the photic zone of the oceans could have been colonized, suggesting that: (i) high UV radiation would not have prevented the colonization of land and (ii) it is unlikely that the fossil record can be used to constrain estimates of the UV radiation environment of the early Earth (although geochemical approaches and the study of extrasolar planetary atmospheres are likely to provide empirical constraints on the early photobiological environment).

scholarly journals Piezoresistive Characteristics of Nylon Thread Resistive Memories for Wearable Strain Sensors

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 623 ◽  
Author(s):  
Ting-Kuo Kang
Keyword(s):  
Solution Process ◽  
High Resistance State ◽  
Strain Sensors ◽  
Gauge Factor ◽  
Resistive Memory ◽  
Electronic Textiles ◽  
Resistance Change ◽  
Sensor Applications ◽  
Nylon Thread ◽  
Resistance State

A nylon thread (NT) resistive memory is fabricated by performing a simple dip-and-dry solution process using graphene–poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) conductive ink. The piezoresistive characteristics of the NT resistive memory are further evaluated for wearable strain sensors. While a stretching strain (ε) is applied to the NT resistive memory, the relative resistance change of low-resistance state (LRS) is found to be higher than that of high-resistance state (HRS). This result implies that the contribution of the local overlapping interconnection change in graphene and PEDOT:PSS materials to the LRS resistance change is greater than that to the HRS resistance change. In addition, through many cycles of repeatedly stretching and releasing the LRS of the NT resistive memory at a fixed ε = 7.1%, a gauge factor of approximately 22 is measured and achieved for a highly sensitive and durable strain sensor. Finally, the actual integration of the NT resistive memory into textiles can provide resistive memory and piezoresistive sensor applications simultaneously for wearable electronic textiles.

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

2011 ◽  
Vol 32 (11) ◽  
pp. 1585-1587 ◽  
Author(s):  
Yu-Sheng Chen ◽  
Heng-Yuan Lee ◽  
Pang-Shiu Chen ◽  
Wen-Hsing Liu ◽  
Sum-Min Wang ◽  
...  
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Resistive Memory ◽  
Resistance State

Reducing Probabilistic Weather Forecasts to the Worst Case Scenario: Anchoring Effects

2008 ◽  
Author(s):  
Sonia Savelli ◽  
Susan Joslyn ◽  
Limor Nadav-Greenberg ◽  
Queena Chen
Keyword(s):  
Case Scenario ◽  
Worst Case ◽  
Weather Forecasts ◽  
Worst Case Scenario ◽  
Anchoring Effects

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

EXPEDITION TO MALI, 2020

2020 ◽  
pp. 12-28
Author(s):  
D. V. Vaniukova ◽  
◽  
P. A. Kutsenkov ◽  
Keyword(s):  
Mass Murder ◽  
The State ◽  
Case Scenario ◽  
Worst Case ◽  
Traditional Art ◽  
Peter The Great ◽  
State Museum ◽  
Bobo Dioulasso ◽  
Oriental Studies ◽  
The Village

The research expedition of the Institute of Oriental studies of the Russian Academy of Sciences has been working in Mali since 2015. Since 2017, it has been attended by employees of the State Museum of the East. The task of the expedition is to study the transformation of traditional Dogon culture in the context of globalization, as well as to collect ethnographic information (life, customs, features of the traditional social and political structure); to collect oral historical legends; to study the history, existence, and transformation of artistic tradition in the villages of the Dogon Country in modern conditions; collecting items of Ethnography and art to add to the collection of the African collection of the. Peter the Great Museum (Kunstkamera, Saint Petersburg) and the State Museum of Oriental Arts (Moscow). The plan of the expedition in January 2020 included additional items, namely, the study of the functioning of the antique market in Mali (the “path” of things from villages to cities, which is important for attributing works of traditional art). The geography of our research was significantly expanded to the regions of Sikasso and Koulikoro in Mali, as well as to the city of Bobo-Dioulasso and its surroundings in Burkina Faso, which is related to the study of migrations to the Bandiagara Highlands. In addition, the plan of the expedition included organization of a photo exhibition in the Museum of the village of Endé and some educational projects. Unfortunately, after the mass murder in March 2019 in the village of Ogossogou-Pel, where more than one hundred and seventy people were killed, events in the Dogon Country began to develop in the worst-case scenario: The incessant provocations after that revived the old feud between the Pel (Fulbe) pastoralists and the Dogon farmers. So far, this hostility and mutual distrust has not yet developed into a full-scale ethnic conflict, but, unfortunately, such a development now seems quite likely.

Risk-Based Robust Bidding Strategies for EVs’ Aggregators in Day-ahead Markets with Uncertainty

2020 ◽  
Author(s):  
Ahmed Abdelmoaty ◽  
Wessam Mesbah ◽  
Mohammad A. M. Abdel-Aal ◽  
Ali T. Alawami
Keyword(s):  
Robust Optimization ◽  
Electricity Market ◽  
Real Life ◽  
Optimization Approach ◽  
Case Scenario ◽  
Worst Case ◽  
Bidding Strategies ◽  
Wind Generators ◽  
Proposed Model ◽  
Optimal Bidding

In the recent electricity market framework, the profit of the generation companies depends on the decision of the operator on the schedule of its units, the energy price, and the optimal bidding strategies. Due to the expanded integration of uncertain renewable generators which is highly intermittent such as wind plants, the coordination with other facilities to mitigate the risks of imbalances is mandatory. Accordingly, coordination of wind generators with the evolutionary Electric Vehicles (EVs) is expected to boost the performance of the grid. In this paper, we propose a robust optimization approach for the coordination between the wind-thermal generators and the EVs in a virtual<br>power plant (VPP) environment. The objective of maximizing the profit of the VPP Operator (VPPO) is studied. The optimal bidding strategy of the VPPO in the day-ahead market under uncertainties of wind power, energy<br>prices, imbalance prices, and demand is obtained for the worst case scenario. A case study is conducted to assess the e?effectiveness of the proposed model in terms of the VPPO's profit. A comparison between the proposed model and the scenario-based optimization was introduced. Our results confirmed that, although the conservative behavior of the worst-case robust optimization model, it helps the decision maker from the fluctuations of the uncertain parameters involved in the production and bidding processes. In addition, robust optimization is a more tractable problem and does not suffer from<br>the high computation burden associated with scenario-based stochastic programming. This makes it more practical for real-life scenarios.<br>

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