scholarly journals A carrier transport model in the high-resistance state of lead-methylamine iodide-based resistive memory devices

AIP Advances ◽  
2017 ◽  
Vol 7 (8) ◽  
pp. 085207 ◽  
Author(s):  
Yongwoo Kwon ◽  
Nayoung Park ◽  
Pil-Ryung Cha
Keyword(s):  
High Resistance ◽  
Carrier Transport ◽  
Transport Model ◽  
High Resistance State ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistance State

Scalability of voltage-controlled filamentary and nanometallic resistance memory devices

Nanoscale ◽  
2017 ◽  
Vol 9 (34) ◽  
pp. 12690-12697 ◽  
Author(s):  
Yang Lu ◽  
Jong Ho Lee ◽  
I.-Wei Chen
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Memory Devices ◽  
Low Resistance ◽  
Controlled Switching ◽  
Current Compliance ◽  
Resistance State

An area-proportional current compliance can ensure the area-scalability of RRAM's resistance, in both the high resistance state and the low resistance state, which stems from voltage-controlled switching.

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

2011 ◽  
Vol 32 (11) ◽  
pp. 1585-1587 ◽  
Author(s):  
Yu-Sheng Chen ◽  
Heng-Yuan Lee ◽  
Pang-Shiu Chen ◽  
Wen-Hsing Liu ◽  
Sum-Min Wang ◽  
...  
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Resistive Memory ◽  
Resistance State

scholarly journals Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045205 ◽  
Author(s):  
Nayoung Park ◽  
Yongwoo Kwon ◽  
Jaeho Choi ◽  
Ho Won Jang ◽  
Pil-Ryung Cha
Keyword(s):  
Carrier Transport ◽  
Transport Model ◽  
Memory Devices ◽  
Resistive Memory ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite

Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang
Keyword(s):  
Ultraviolet Radiation ◽  
High Resistance ◽  
High Resistance State ◽  
High Ratio ◽  
Resistance Switching ◽  
Resistive State ◽  
Oxide Systems ◽  
Low Resistance ◽  
Resistance State

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.

Study of the Structural Transformation of Ge2Sb2Te5 Induced by Current Pulse in Phase Change Memory

2003 ◽  
Vol 803 ◽  
Author(s):  
Rong Zhao ◽  
Tow Chong Chong ◽  
Lu Ping Shi ◽  
Pik Kie Tan ◽  
Hao Meng ◽  
...  
Keyword(s):  
Phase Change ◽  
Structural Transformation ◽  
Active Layer ◽  
High Resistance ◽  
Phase Change Memory ◽  
High Resistance State ◽  
Face Centered Cubic ◽  
Cycle Number ◽  
Resistance State ◽  
Change Memory

ABSTRACTThe electrical induced structural transformation of Ge2Sb2Te5 thin film in phase change memory device was investigated using micro-Raman spectroscopy and transmission electronic microscopy (TEM). Selected area electron diffraction (SAD) pattern showed that the electrical-induced Ge2Sb2Te5 film was crystallized into a face-centered cubic structure. Micro-Raman spectra show that the Ge2Sb2Te5 active layer at the high resistance state exhibited two minor peaks superposed on the broad peak after several switch cycles, which is identical to those of the Ge2Sb2Te5 active layer at the low resistance state. This is most likely due to the accumulation of segregated crystallites. TEM results suggest that the existence of nano-sized nuclei clusters resulted in the reduced resistance for the Ge2Sb2Te5 active layer at the high resistance state after first several switches. The dependence of resistance on the cycle number indicates that the deterioration of the Ge2Sb2Te5 active layer is resulted from the incomplete amorphization process, which is consistent with the micro-Raman results.

Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

2020 ◽  
Vol 53 (39) ◽  
pp. 395101 ◽  
Author(s):  
Shih-Kai Lin ◽  
Cheng-Hsien Wu ◽  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Chen-Hsin Lien ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Resistance ◽  
State Level ◽  
High Resistance State ◽  
Resistance State

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

scholarly journals Electric Modulation of Conduction in MAPbBr3 Single Crystals

2020 ◽  
Author(s):  
Shanming Ke ◽  
Shangyu Luo ◽  
Jinhui Gong ◽  
Liwen Qiu ◽  
Renhong Liang ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystals ◽  
Resistive Switching ◽  
High Resistance ◽  
High Resistance State ◽  
Pt Symmetry ◽  
Interface Trap ◽  
Electrode Area ◽  
Resistance State ◽  
Open Question

Abstract The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites is an open question until now. Here, a switchable diode-like RS behavior in MAPbBr3 single crystals using Au (or Pt) symmetry electrodes is reported. Both the high resistance state (HRS) and low resistance state (LRS) are electrode-area dependent and light responsive. We propose an electric-field-driven inner p-n junction accompanied by an interface trap-controlled SCLC mechanism to explain this switchable diode-like RS behavior in MAPbBr3 single crystals.

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