Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781424484935

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

FDSOI radiation dosimeters

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872260 ◽

2011 ◽

Cited By ~ 6

Author(s):

Jeng-Bang Yau ◽

Michael S. Gordon ◽

Kenneth P. Rodbell ◽

Steven J. Koester ◽

Patrick W. DeHaven ◽

...

Download Full-text

Post Si CMOS graphene nanoelectronics

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872211 ◽

2011 ◽

Cited By ~ 1

Author(s):

Chun-Yung Sung

Download Full-text

EUV lithography introduction at Chipmakers

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872264 ◽

2011 ◽

Author(s):

Christian Wagner ◽

Jose Bacelar ◽

Noreen Harned ◽

Erik Loopstra ◽

Stef Hendriks ◽

...

Keyword(s):

Euv Lithography

Download Full-text

High temperature millisecond silicide anneal for contact resistivity < 10−8 Ωcm2

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872239 ◽

2011 ◽

Author(s):

W.-Y Loh ◽

Y. R. Yang ◽

P. Y. Hung ◽

B. Sassman ◽

C. Kenney ◽

...

Keyword(s):

High Temperature ◽

Contact Resistivity

Download Full-text

New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872270 ◽

2011 ◽

Cited By ~ 2

Author(s):

Moon-Sik Seo ◽

Tetsuo Endoh

Keyword(s):

Interference Effect ◽

Design Method ◽

3 Dimensional ◽

Cell Arrays

Download Full-text

Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872235 ◽

2011 ◽

Author(s):

A. Prakash ◽

S. Maikap ◽

G. Chen ◽

F. Chen ◽

M.-J. Kao ◽

...

Keyword(s):

Resistive Switching ◽

Interfacial Layer ◽

Resistive Switching Memory ◽

Switching Memory

Download Full-text

Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872251 ◽

2011 ◽

Cited By ~ 14

Author(s):

Shimeng Yu ◽

Yi Wu ◽

Yang Chai ◽

J. Provine ◽

H.-S. Philip Wong

Download Full-text

VLSI-TSA organization

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872274 ◽

2011 ◽

Download Full-text

Chances and challenges of emerging memories for DRAM application

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872229 ◽

2011 ◽

Cited By ~ 2

Author(s):

Sung-Woong Chung

Download Full-text

Challenges of future silicon IC technology

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications ◽

10.1109/vtsa.2011.5872207 ◽

2011 ◽

Author(s):

Shang-Yi Chiang

Keyword(s):

Ic Technology

Download Full-text

Proceedings of 2011 International Symposium on VLSI Technology, Systems and ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

FDSOI radiation dosimeters

Post Si CMOS graphene nanoelectronics

EUV lithography introduction at Chipmakers

High temperature millisecond silicide anneal for contact resistivity < 10−8 Ωcm2

New design method of the 3-Dimensional vertical stacked FG type NAND cell arrays without the interference effect

Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer

Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

VLSI-TSA organization

Chances and challenges of emerging memories for DRAM application

Challenges of future silicon IC technology

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
Latest Publications