Integrating 2D electron gas oxide heterostructures on silicon using rare-earth titanates

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 287-292 ◽  
Author(s):  
Eric N. Jin ◽  
Lior Kornblum ◽  
Charles H. Ahn ◽  
Frederick J. Walker
Keyword(s):  
Carrier Density ◽  
Semiconductor Device ◽  
Electron Gas ◽  
High Electron ◽  
Oxide Systems ◽  
Oxide Heterostructures ◽  
Lower Oxygen Partial Pressure ◽  
Lower Oxygen ◽  
Dimensional Electron Gas

ABSTRACTIntegrating oxide heterostructures on silicon has the potential to leverage the multifunctionalities of oxide systems into semiconductor device technology. We present the growth and characterization of two-dimensional electron gas (2DEG) oxide systems LaTiO3/SrTiO3 (LTO/STO) and GdTiO3/SrTiO3 (GTO/STO) on Si(001). We show interface-based conductivity in the oxide films and measure high electron densities ranging from ∼9 × 1013 cm-2 interface-1 in GTO/STO/Si to ∼9 × 1014 cm-2 interface-1 in LTO/STO/Si. We attribute the higher measured carrier density in the LTO/STO films to a higher concentration of interface-bound oxygen vacancies arising from a lower oxygen partial pressure during growth. These vacancies donate conduction electrons and result in an increased measured carrier density. The integration of such 2DEG oxide systems with silicon provides a bridge between the diverse electronic properties of oxide systems and the established semiconductor platform and points toward new devices and functionalities.

Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Ultrasonic Vibrations ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dx Centers ◽  
Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

scholarly journals Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Sang Woon Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Electron Gas ◽  
Atomic Layer ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Layer Deposition ◽  
Dimensional Electron Gas

Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).

Characterization of a two-dimensional electron gas in GaAs–AlGaAs by surface acoustic waves

1991 ◽  
Vol 69 (3-4) ◽  
pp. 461-464 ◽  
Author(s):  
F. Guillion ◽  
A. Sachrajda ◽  
M. D'Iorio ◽  
R. Boulet ◽  
P. Coleridge
Keyword(s):  
Acoustic Waves ◽  
Carrier Density ◽  
Wave Attenuation ◽  
Surface Acoustic Waves ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

We report simultaneous magnetotransport and surface acoustic-wave attenuation measurements performed at 1.25 K on a two-dimensional electron gas (2-DEG) GaAs–AlGaAs heterojunction sample. The carrier density was varied by means of the persistent photoconductivity effect. A comparison of the conductivity deduced from the two types of measurements is used to obtain information about the homogeneity of the 2-DEG sample. For this specific sample a simple model shows that there exists a 20% variation in the carrier density at some intermediate carrier densities, while prior to illumination and after saturation with light the spread in carrier density in the sample was only a few percent.

An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

2004 ◽  
Vol 95 (12) ◽  
pp. 7982-7989 ◽  
Author(s):  
S. Elhamri ◽  
R. Berney ◽  
W. C. Mitchel ◽  
W. D. Mitchell ◽  
J. C. Roberts ◽  
...  
Keyword(s):  
Electron Gas ◽  
Electrical Characterization ◽  
Silicon Substrates ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas
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