scholarly journals Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

2011 ◽  
Vol 98 (9) ◽  
pp. 092103 ◽  
Author(s):  
S. Schöche ◽  
Junxia Shi ◽  
A. Boosalis ◽  
P. Kühne ◽  
C. M. Herzinger ◽  
...  
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