Performance of Anisotropically Conductive Adhesive Attachments on Adhesiveless Polyimide Substrate during High-Temperature Storage Tests

MRS Advances ◽  
2016 ◽  
Vol 1 (51) ◽  
pp. 3459-3464
Author(s):  
Sanna Lahokallio ◽  
Laura Frisk
Keyword(s):  
High Temperature ◽  
Conductive Adhesive ◽  
Anisotropic Conductive Adhesive ◽  
Polyimide Substrate ◽  
High Temperature Storage ◽  
Early Failures ◽  
Electrical Reliability ◽  
Electronics Packages ◽  
Very High ◽  
Temperature Storage

ABSTRACTThe high-temperature performance of electronics packages was studied at 180°C, 200°C and 240°C for 3,000h. The structure tested consisted of a fairly large silicon chip attached with anisotropic conductive adhesive (ACA) onto an adhesiveless PI substrate. These structures showed good electrical reliability at 180°C. Several early failures were seen at the other temperatures. However, only 23% of the test samples failed at 200°C, while considerably more failures were seen at 240°C. The results showed that good high-temperature reliability can be achieved with polymer interconnections. However, the exposure time should be limited, especially at very high temperatures, to avoid failures caused by the materials becoming brittle.

High temperature storage reliability investigation of the Al–Cu wire bond interface

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  
Keyword(s):  
High Temperature ◽  
Wire Bond ◽  
High Temperature Storage ◽  
Bond Interface ◽  
Temperature Storage

High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman
Keyword(s):  
High Temperature ◽  
Gamma Radiation ◽  
Radiation Effects ◽  
Storage Period ◽  
Bending Test ◽  
Three Point Bending ◽  
Micromechanical Properties ◽  
3D Ct Scan ◽  
High Temperature Storage ◽  
Temperature Storage

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.

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