A water heater using very high-temperature storage and variable thermal contact resistance

2001 ◽  
Vol 25 (10) ◽  
pp. 891-898
Author(s):  
C. K. Jotshi ◽  
D. Y. Goswami ◽  
J. F. Klausner ◽  
S. Malakar
Keyword(s):  
High Temperature ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Water Heater ◽  
High Temperature Storage ◽  
Very High ◽  
Temperature Storage

High‐Temperature Skin Softening Materials Overcoming the Trade‐Off between Thermal Conductivity and Thermal Contact Resistance

Small ◽  
2021 ◽  
pp. 2102128
Author(s):  
Taehun Kim ◽  
Seongkyun Kim ◽  
Eungchul Kim ◽  
Taesung Kim ◽  
Jungwan Cho ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
Contact Resistance ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Trade Off

Performance of Anisotropically Conductive Adhesive Attachments on Adhesiveless Polyimide Substrate during High-Temperature Storage Tests

MRS Advances ◽  
2016 ◽  
Vol 1 (51) ◽  
pp. 3459-3464
Author(s):  
Sanna Lahokallio ◽  
Laura Frisk
Keyword(s):  
High Temperature ◽  
Conductive Adhesive ◽  
Anisotropic Conductive Adhesive ◽  
Polyimide Substrate ◽  
High Temperature Storage ◽  
Early Failures ◽  
Electrical Reliability ◽  
Electronics Packages ◽  
Very High ◽  
Temperature Storage

ABSTRACTThe high-temperature performance of electronics packages was studied at 180°C, 200°C and 240°C for 3,000h. The structure tested consisted of a fairly large silicon chip attached with anisotropic conductive adhesive (ACA) onto an adhesiveless PI substrate. These structures showed good electrical reliability at 180°C. Several early failures were seen at the other temperatures. However, only 23% of the test samples failed at 200°C, while considerably more failures were seen at 240°C. The results showed that good high-temperature reliability can be achieved with polymer interconnections. However, the exposure time should be limited, especially at very high temperatures, to avoid failures caused by the materials becoming brittle.

Reliability of Cu to Cu Joints Fabricated Using SnAg Capping Layer for 3D TSV Applications

2014 ◽  
Vol 900 ◽  
pp. 711-714 ◽  
Author(s):  
Sung Woo Ma ◽  
Jeong Hwan Lee ◽  
Jin Su Lee ◽  
Ki Bum Kim ◽  
Min Suk Suh ◽  
...  
Keyword(s):  
High Temperature ◽  
Contact Resistance ◽  
Crack Formation ◽  
Thermal Cycling Test ◽  
Capping Layer ◽  
High Temperature Storage ◽  
Bonding Technology ◽  
3D Chip Stacking ◽  
Solder Layer ◽  
Temperature Storage

Chip to Chip bonding technology using Cu bumps with solder capping layer has been widely investigated for 3D chip stacking applications. We studied the reliability of the Cu joints. Cu bumps capped with Sn-Ag solder layer were joined to bare Cu pads or Au/Ni electroplated Cu pads at 300°C for 10 sec after dispensing non-conductive paste (NCP). After joining, there were no failed joints and the contact resistance of the joints was very low in all specimens. High temperature storage (HTS) test (120°C, up to 2000 hrs) results demonstrated that the reliability was good in all specimens, while thermal cycling test (-55°C /+125°C, up to 2500 cycles) results showed that the contact resistance of the joints increased quickly after 2000 cycles which was attributed the crack formation in the joint interfaces.

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