scholarly journals Numerical Simulation of Carbon Nanotubes/GaAs Hybrid PV Devices with AMPS-1D

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Georgi Xosrovashvili ◽  
Nima E. Gorji
Keyword(s):  
Open Circuit Voltage ◽  
Defect Density ◽  
Open Circuit ◽  
Thickness Variation ◽  
Device Physics ◽  
Electrical Parameters ◽  
Single Walled Carbon Nanotube ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
And Performance

The performance and characteristics of a hybrid heterojunction single-walled carbon nanotube and GaAs solar cell are modelled and numerically simulated using AMPS-1D device simulation tool. The device physics and performance with different junction parameters are analysed. The results suggest that the open-circuit voltage changes very slightly by changing the electron affinity, acceptor and donor density while the other electrical parameters reach an optimum value. Increasing the concentration of a discrete defect density in the absorber layer decreases the electrical parameters. The current-voltage characteristics, quantum efficiency, band gap, and thickness variation of the photovoltaic response will be quantitatively considered.

Visible Light Photodiodes and Photovoltages from Detonation Nanodiamonds

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 971-975
Author(s):  
Bohuslav Rezek ◽  
Stepan Stehlik ◽  
Alexander Kromka ◽  
Jean-Charles Arnault ◽  
Martin Weis ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Green Laser ◽  
Open Circuit ◽  
Detonation Nanodiamonds ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Energy Conversion Devices ◽  
532 Nm

ABSTRACTMacroscopic and microscopic photovoltage characteristics of detonation nanodiamonds (DNDs) with distinct surface terminations are presented. Organic photodiodes are fabricated based on P3HT+DNDs mixture (50 wt%). We compare effect of hydrogen and oxygen termination of DNDs. Compared to photodiodes without DNDs the current-voltage characteristics of photodiodes with O-DNDs in dark and under AM 1.5 illumination show reduced dark current, and higher photocurrent and open circuit voltage. H-DNDs shunt the photodiodes, which is attributed to their surface conductivity. Kelvin probe force microscopy detects a reproducible photovoltage of around 5 mV generated by a green laser (532 nm) on both types of pristine DNDs. Thus although conductivity of H-DNDs may represent a problem for photodiodes, both types of DNDs alone can function as miniature energy conversion devices.

scholarly journals Противодействующий фотовольтаический эффект в верхней межгенераторной части трехпереходных GaInP/GaAs/Ge солнечных элементов

2019 ◽  
Vol 53 (11) ◽  
pp. 1568
Author(s):  
М.А. Минтаиров ◽  
В.В. Евстропов ◽  
С.А. Минтаиров ◽  
М.З. Шварц ◽  
Н.А. Калюжный
Keyword(s):  
Electric Power ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Undesirable Effect ◽  
Current Dependence ◽  
Power Generators ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractThe “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the V _ oc – J _ sc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p ^+– n ^+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p – n junctions. In this case, the V _ oc – J _ sc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.

Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells

2013 ◽  
Vol 1551 ◽  
pp. 143-148
Author(s):  
R. Vasan ◽  
Y. F. M. Makableh ◽  
J. C. Sarker ◽  
M. O. Manasreh
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Power Conversion ◽  
Open Circuit ◽  
Interband Transitions ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTSolar cells based on InAs quantum dots embedded in InxGa1-xAs quantum wells grown on n-type GaAs substrate were fabricated and tested. Solar cells with In mole fraction (x) in the range of 0-40% were investigated. The performance of the solar cells was evaluated using current-voltage characteristics, spectral response, and quantum efficiency measurements. The spectral response and quantum efficiency spectra possess several peaks along the lower energy side of the spectra, which are attributed to the interband transitions in the structure. These peaks are red shifted as x is increased above 0 %. The device power conversion efficiency was extracted from the current-voltage characteristics using an AM 1.5 solar simulator. The short circuit current density increased as the x is increased above 0 %. But the overall power conversion efficiency decreased due to decrease in the open circuit voltage. The decrease in open circuit voltage is due strain induced dislocations caused by lattice mismatch.

scholarly journals Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 820
Author(s):  
Jakub Holovský ◽  
Michael Stuckelberger ◽  
Tomáš Finsterle ◽  
Brianna Conrad ◽  
Amalraj Peter Amalathas ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Solar Cells ◽  
Carrier Transport ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Open Circuit ◽  
Absorption Enhancement ◽  
Thickness Variation ◽  
Accurate Analysis ◽  
Photocurrent Spectroscopy

The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy has gone through continuous development during the last two decades. Still, giving quantitative predictions of photovoltaic device performance is a challenging task. As new materials appear, a prediction of potentially achievable open-circuit voltage with respect to bandgap is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. First, the absolute defect density has to be calculated, taking into account optical effects, such as absorption enhancement, due to scattering. Secondly, the electrical effect of thickness variation has to be addressed. We analyzed a series of state-of-the-art hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking degradation. Based on a combination of empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage of a device with a given defect density and absorber thickness. We observed that, rather than the defect density or thickness alone, it is their product or the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives close upper bounds to the open-circuit voltage with the advantage of a much easier evaluation.

MODELING OF COAXIAL CARBON NANOTUBE SCHOTTKY DIODES

2010 ◽  
Vol 24 (17) ◽  
pp. 1883-1890
Author(s):  
ALIREZA KARGAR
Keyword(s):  
Carbon Nanotube ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Gate Insulator ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Single Walled Carbon Nanotube ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

A carbon nanotube (CNT) Schottky diode based on coaxial geometry is presented. We show that coaxially gated CNT field effect transistors (FETs) with a p-type semiconducting single-walled carbon nanotube (s-SWNT) and asymmetric contacts can provide good diode characteristics. The effect of different physical and electrical parameters such as gate bias voltage, gate insulator thickness, and CNT diameter on the rectification current–voltage characteristics is investigated. We demonstrate that it is possible to tune the rectification characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage by using these parameters.

Correlation among the ionization potential, built-in potential, and the open-circuit voltage of multi-layered organic photovoltaic devices

2011 ◽  
Vol 1286 ◽  
Author(s):  
Eiji Itoh ◽  
Toshiki Shirotori
Keyword(s):  
Ionization Potential ◽  
Open Circuit Voltage ◽  
Energy Difference ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices ◽  
Extraction Buffer ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTWe have investigated the current-voltage characteristics of the multi-layered photovoltaic devices consisting of ITO/oxide /p-type (donor)/fullerene/ bathocuproine (BCP)/ Al structures. We chose various p-type (donors) small molecules and polymers in order to tune the values of ionization potential (IP) of donor molecules. The open-circuit voltage (Voc) increases with the increment of IP of donor materials. However, VOC was limited at ~0.6-0.7V for the devices without oxide layer. On the other hand, the VOC increases up to 0.9V for the devices with NiO and to ~ 1.1V for the devices with MoOX as a hole extraction buffer layer, respectively. We also estimated the work-function differences between Al and the oxide as 0.7, 0.9-1.0, and 1.2-1.3 eV for the device without oxide, with NiO, and with MoOX, respectively. We therefore concluded the value of VOC is limited by the lower part of VOC and energy difference between the LUMO of fullerene and the HOMO of donor ΔE.

scholarly journals Gas Sensing with Solar Cells: The Case of NH3 Detection through Nanocarbon/Silicon Hybrid Heterojunctions

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2303
Author(s):  
Giovanni Drera ◽  
Sonia Freddi ◽  
Tiziano Freddi ◽  
Andrea De Poli ◽  
Stefania Pagliara ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Gas Sensors ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Gas Sensing ◽  
Open Circuit ◽  
Multiwalled Carbon ◽  
Single Walled Carbon Nanotube ◽  
Cell Parameters ◽  
Current Voltage

Photovoltaic (PV) cells based on single-walled carbon nanotube (SWCNT)/silicon (Si) and multiwalled carbon nanotube (MWCNT)/Si junctions were tested under exposure to NH3 in the 0–21 ppm concentration range. The PV cell parameters remarkably changed upon NH3 exposure, suggesting that these junctions, while being operated as PV cells, can react to changes in the environment, thereby acting as NH3 gas sensors. Indeed, by choosing the open-circuit voltage, VOC, parameter as read-out, it was found that these cells behaved as gas sensors, operating at room temperature with a response higher than chemiresistors developed on the same layers. The sensitivity was further increased when the whole current–voltage (I–V) curve was collected and the maximum power values were tracked upon NH3 exposure.

Optoelectronic Properties of Vanadyl phthalocyanine Based Organic-Inorganic Hybrid Devices

2011 ◽  
Vol 110-116 ◽  
pp. 3255-3260
Author(s):  
Imran Murtaza ◽  
Khasan S. Karimov ◽  
Muhammad H. Sayyad ◽  
Ibrahim Qazi
Keyword(s):  
Reverse Bias ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Optoelectronic Properties ◽  
Hybrid Structures ◽  
Inorganic Hybrid ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Hybrid Devices ◽  
Very High

The Optoelectronic properties of organic-inorganic hybrid devices consisting of Ag/VOPc/n-Si/Ag structure have been investigated through analyzing the current-voltage characteristics. We have also studied the effect of illumination on the open circuit voltage, capacitance and reverse resistance with consideration of VOPc film thickness. The dark I-V characteristics display rectification behaviour of such hybrid structures and a very high photo-capacitive response under illumination of 200 lx is observed. Furthermore due to the generation of photo induced charges, under illumination, the decrease in reverse bias resistance to one third of its value is observed.

High Sensitivity Photochemical Sensors Based on Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
E. Fortunato ◽  
A. Malik ◽  
A. Séco ◽  
A. Maçarico ◽  
R. Martins
Keyword(s):  
Dark Current ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Chemical Oxidation ◽  
Hydrogen Atmosphere ◽  
Open Circuit ◽  
Current Voltage ◽  
Magnitude Variation ◽  
Current Voltage Characteristics

ABSTRACTHydrogenated amoiphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Sign in / Sign up

Export Citation Format

Share Document