Role of a New Type Chelating Agent in Chemical Mechanical Polishing of R-Plane Sapphire Substrate

2017 ◽  
Vol 6 (9) ◽  
pp. P618-P625 ◽  
Author(s):  
Xin Zhao ◽  
Xinhuan Niu ◽  
Jianchao Wang ◽  
Da Yin ◽  
Caihong Yao
Keyword(s):  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Chelating Agent ◽  
Mechanical Polishing ◽  
New Type

Effect of Sr(OH)2 as a pH Regulator on Different Plane Sapphire Substrate Chemical Mechanical Polishing

2019 ◽  
Vol 8 (2) ◽  
pp. P63-P69 ◽  
Author(s):  
Da Yin ◽  
Xinhuan Niu ◽  
Liu Yang ◽  
Kai Zhang ◽  
Jianchao Wang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Two-Step Chemical Mechanical Polishing of Sapphire Substrate

2010 ◽  
Vol 157 (6) ◽  
pp. H688 ◽  
Author(s):  
Zefang Zhang ◽  
Weili Liu ◽  
Zhitang Song ◽  
Xiaokai Hu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Evaluation of the Stability on the New Alkaline Copper Bulk Slurry

2015 ◽  
Vol 645-646 ◽  
pp. 352-355
Author(s):  
Juan Wang ◽  
Ru Wang ◽  
Guo Dong Chen
Keyword(s):  
Integrated Circuit ◽  
Chemical Mechanical Polishing ◽  
Chelating Agent ◽  
Cost Effective ◽  
Mechanical Polishing ◽  
Oxidizing Agent ◽  
Low Dielectric ◽  
The Stability ◽  
Copper Polishing ◽  
Integrated Circuit Processing

At present, the chemical mechanical polishing is the only means for global planarization of an integrated circuit. After the node of the integrated circuit processing comes into 45nm, the diameter of wafer is 300mm, and the copper interconnect layer is above the 10 layer. In the same time the new low dielectric constant materials are used to the integrated circuit processing. That requires the property of the slurry used in the chemical mechanical polishing stricter. So the domestic and international companies carry out a series research works. Based on investigation and research for many years, the new alkaline copper rough slurry has been developed by the teachers and students in the Hebei University of Technology. The slurry has advantages as disadvantages. The composition of cost-effective slurry is simple and the effect of chemical mechanical polishing is good. But its stability is poor. In order to improve the stability, the compositions of the slurry need to adjust.The new alkaline copper rough slurry composed by abrasive, surface, chelating agent, oxidizing agent and deionized water. Experiments investigate the influence rule of copper polishing rate by the concentration of abrasive, the content of surface, the content of oxidizing agent and the content of chelating agent. The conclusion is arrived. When the concentration of abrasive is 4%, the content of surfactant is 10ml/l, the content of chelating agent is 10ml/l and the content of oxidizing agent is 5ml/l, the copper polishing rate keep 5000 Å /min.

ChemInform Abstract: Present and Future Role of Chemical Mechanical Polishing in Wafer Bonding

ChemInform ◽  
2010 ◽  
Vol 29 (31) ◽  
pp. no-no
Author(s):  
C. GUI ◽  
M. ELWENSPOEK ◽  
J. G. E. GARDENIERS ◽  
P. V. LAMBECK
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Future Role
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