scholarly journals Growth and Property of In:Ga$lt;inf$gt;2$lt;/inf$gt;O$lt;inf$gt;3$lt;/inf$gt; Oxide Semiconductor Single Crystal

2017 ◽  
Vol 32 (6) ◽  
pp. 621
Author(s):  
TANG Hui-Li ◽  
WU Qing-Hui ◽  
LUO Ping ◽  
WANG Qing-Guo ◽  
XU Jun
Keyword(s):  
Single Crystal ◽  
Oxide Semiconductor ◽  
Semiconductor Single Crystal

scholarly journals Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

2019 ◽  
Vol 117 (2) ◽  
pp. 902-906 ◽  
Author(s):  
Mark Hettick ◽  
Hao Li ◽  
Der-Hsien Lien ◽  
Matthew Yeh ◽  
Tzu-Yi Yang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Indium Tin Oxide ◽  
High Performance ◽  
High Growth ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Lattice Match ◽  
Direct Growth ◽  
Shape Controlled

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology

2009 ◽  
Vol 21 (48) ◽  
pp. 4970-4974 ◽  
Author(s):  
Wen Hsin Chang ◽  
Chih Hsun Lee ◽  
Yao Chung Chang ◽  
Pen Chang ◽  
Mao Lin Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology

scholarly journals Исследование микроволнового поглощения в полупроводниках для устройств умножения частоты и управления выводом излучения непрерывных и импульсных гиротронов

2020 ◽  
Vol 54 (9) ◽  
pp. 878
Author(s):  
К.В. Маремьянин ◽  
В.В. Паршин ◽  
Е.А. Серов ◽  
В.В. Румянцев ◽  
К.Е. Кудрявцев ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Frequency Multiplication ◽  
Crystal Silicon ◽  
Loss Mechanism ◽  
Semiconductor Crystals ◽  
Fabry Perot ◽  
Tan Δ ◽  
Emission Output ◽  
Semiconductor Single Crystal

Abstract The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tanδ based on open high-quality Fabry–Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan δ ≈ (1–2) × 10^–4 even for a noticeable, at a level of 10^12 cm^–3, free carrier concentration. In contrast with GaAs and Si, tanδ in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons.

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