Methylviologen redox reactions at semiconductor single crystal electrodes

1996 ◽  
Vol 100 (7) ◽  
pp. 1169-1175 ◽  
Author(s):  
G. H. Schoenmakers ◽  
R. Waagenaar ◽  
J. J. Kelly
Keyword(s):  
Single Crystal ◽  
Redox Reactions ◽  
Semiconductor Single Crystal

scholarly journals Исследование микроволнового поглощения в полупроводниках для устройств умножения частоты и управления выводом излучения непрерывных и импульсных гиротронов

2020 ◽  
Vol 54 (9) ◽  
pp. 878
Author(s):  
К.В. Маремьянин ◽  
В.В. Паршин ◽  
Е.А. Серов ◽  
В.В. Румянцев ◽  
К.Е. Кудрявцев ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Frequency Multiplication ◽  
Crystal Silicon ◽  
Loss Mechanism ◽  
Semiconductor Crystals ◽  
Fabry Perot ◽  
Tan Δ ◽  
Emission Output ◽  
Semiconductor Single Crystal

Abstract The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tanδ based on open high-quality Fabry–Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan δ ≈ (1–2) × 10^–4 even for a noticeable, at a level of 10^12 cm^–3, free carrier concentration. In contrast with GaAs and Si, tanδ in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons.

Synthesis of two-dimensional semiconductor single-crystal PtSe2 under high pressure

2017 ◽  
Vol 53 (2) ◽  
pp. 1256-1263 ◽  
Author(s):  
Ke Liu ◽  
Binjie Zheng ◽  
Jingjun Wu ◽  
Yuanfu Chen ◽  
Xinqiang Wang ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Two Dimensional ◽  
Semiconductor Single Crystal
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