scholarly journals Tin-Induced Crystallization of Amorphous Silicon under Pulsed Laser Irradiation

2017 ◽  
Vol 62 (9) ◽  
pp. 806-817
Author(s):  
V.B. Neimash V.B. ◽  
◽  
V. Melnyk ◽  
L.L. Fedorenko ◽  
P.Ye. Shepelyavyi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Induced Crystallization ◽  
Pulsed Laser Irradiation

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

1984 ◽  
Vol 52 (26) ◽  
pp. 2360-2363 ◽  
Author(s):  
Michael O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Melting Temperature ◽  
Pulsed Laser ◽  
Explosive Crystallization ◽  
Pulsed Laser Irradiation

Low-Energy, Pulsed-Laser Irradiation of Amorphous Silicon: Melting and Resolidification at Two Fronts

1984 ◽  
Vol 35 ◽  
Author(s):  
W. Sinke ◽  
F.W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Surface Segregation ◽  
Crystalline Silicon ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Low Energy ◽  
Double Peak Structure ◽  
Pulsed Laser Irradiation

ABSTRACTAfter low-energy pulsed-laser irradiation of Cu-implanted silicon, a double-peak structure is observed in the Cu concentration profile, which results from the occurrence of two melts. From Cu surface segregation we calculate the depth of the surface melt. Cu segregation near the position of the amorphous-crystalline interface gives evidence for a self-propagating melt, moving from the surface region towards the crystalline substrate. Measurements of As-redistribution and of sheet resistance as a function of laser energy density in As-implanted silicon are consistent with the crystallization model which is derived from the effects as observed in Cu-implanted silicon.The results imply a large difference in melting temperature, heat conductivity and heat of melting between amorphous silicon and crystalline silicon.

Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon

1986 ◽  
Vol 1 (1) ◽  
pp. 155-161 ◽  
Author(s):  
W. Sinke ◽  
F. W. Saris ◽  
J. C. Barbour ◽  
J. W. Mayer
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Low Energy ◽  
Fine Grained ◽  
Fine Grain ◽  
Fine Grained Material ◽  
Pulsed Laser Irradiation

Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.

Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation
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