scholarly journals Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers

1984 ◽  
Vol 56 (6) ◽  
pp. 1821-1830 ◽  
Author(s):  
J. Narayan ◽  
C. W. White ◽  
O. W. Holland ◽  
M. J. Aziz
Keyword(s):  
Phase Transformation ◽  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation ◽  
Impurity Redistribution

Multiscale Surface Patterning of Zirconia by Picosecond Pulsed Laser Irradiation

2020 ◽  
Vol 8 (1) ◽  
Author(s):  
Yuka Yamamuro ◽  
Tomotaka Shimoyama ◽  
Isao Yamashita ◽  
Jiwang Yan
Keyword(s):  
Phase Transformation ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Surface Patterning ◽  
Yttria Stabilized Zirconia ◽  
Surface Structures ◽  
Stabilized Zirconia ◽  
Periodic Surface ◽  
Thermally Induced ◽  
Pulsed Laser Irradiation

Abstract Irradiation of yttria-stabilized zirconia (YSZ) was performed by a picosecond pulsed laser to investigate the possibility for multiscale surface patterning. Nanoscale laser-induced periodic surface structures (LIPSS) were successfully generated inside microscale grooves over a large surface area under specific conditions. A thermally induced phase transformation of YSZ was identified after laser irradiation, and this phase transformation was restrained by reducing the laser power or the number of irradiations. Moreover, it was found that the generation of LIPSS greatly changed the surface wettability of YSZ. These results demonstrated the possibility of creating zirconia hybrid patterns with high functionality, which may expand the applications of YSZ in industry.

Melting Phenomena and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Narayan ◽  
C. W. White ◽  
O. W. Holland
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Cross Section ◽  
Pulsed Laser ◽  
Nucleation And Growth ◽  
Bulk Nucleation ◽  
Section Electron ◽  
Section Electron Microscopy ◽  
Pulsed Laser Irradiation ◽  
Impurity Redistribution

ABSTRACTwe have investigated microstructural changes and phase transformations in 30Si+, 75As+, 63Cu+, and 115In+ implanted amorphous silicon layers as a function of pulse energy density. Cross-section electron microscopy studies have revealed the formation of two distinct regions, large and fine polycrystalline regions below the threshold for “defect-free” annealing. The fine polycrystalline region is formed primarily by explosive recrystallization, and occasionally by bulk nucleation and growth. The impurity redistribution in the large and fine polycrystalline regions were determined by Rutherford backscatterinq measurements. Large redistributions of impurities in the large poly region are consistent with velocity of solidifications of 3–5 ms−1. The nature of impurity redistributions in the fine poly region as a function of distribution coefficient provides information on the details of liquid phase crystallization phenomena.

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

1984 ◽  
Vol 52 (26) ◽  
pp. 2360-2363 ◽  
Author(s):  
Michael O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Melting Temperature ◽  
Pulsed Laser ◽  
Explosive Crystallization ◽  
Pulsed Laser Irradiation

Low-Energy, Pulsed-Laser Irradiation of Amorphous Silicon: Melting and Resolidification at Two Fronts

1984 ◽  
Vol 35 ◽  
Author(s):  
W. Sinke ◽  
F.W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Surface Segregation ◽  
Crystalline Silicon ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Low Energy ◽  
Double Peak Structure ◽  
Pulsed Laser Irradiation

ABSTRACTAfter low-energy pulsed-laser irradiation of Cu-implanted silicon, a double-peak structure is observed in the Cu concentration profile, which results from the occurrence of two melts. From Cu surface segregation we calculate the depth of the surface melt. Cu segregation near the position of the amorphous-crystalline interface gives evidence for a self-propagating melt, moving from the surface region towards the crystalline substrate. Measurements of As-redistribution and of sheet resistance as a function of laser energy density in As-implanted silicon are consistent with the crystallization model which is derived from the effects as observed in Cu-implanted silicon.The results imply a large difference in melting temperature, heat conductivity and heat of melting between amorphous silicon and crystalline silicon.

scholarly journals Tin-Induced Crystallization of Amorphous Silicon under Pulsed Laser Irradiation

2017 ◽  
Vol 62 (9) ◽  
pp. 806-817
Author(s):  
V.B. Neimash V.B. ◽  
◽  
V. Melnyk ◽  
L.L. Fedorenko ◽  
P.Ye. Shepelyavyi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Induced Crystallization ◽  
Pulsed Laser Irradiation

Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon

1986 ◽  
Vol 1 (1) ◽  
pp. 155-161 ◽  
Author(s):  
W. Sinke ◽  
F. W. Saris ◽  
J. C. Barbour ◽  
J. W. Mayer
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Low Energy ◽  
Fine Grained ◽  
Fine Grain ◽  
Fine Grained Material ◽  
Pulsed Laser Irradiation

Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.

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