Low-Energy, Pulsed-Laser Irradiation of Amorphous Silicon: Melting and Resolidification at Two Fronts

1984 ◽  
Vol 35 ◽  
Author(s):  
W. Sinke ◽  
F.W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Surface Segregation ◽  
Crystalline Silicon ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Low Energy ◽  
Double Peak Structure ◽  
Pulsed Laser Irradiation

ABSTRACTAfter low-energy pulsed-laser irradiation of Cu-implanted silicon, a double-peak structure is observed in the Cu concentration profile, which results from the occurrence of two melts. From Cu surface segregation we calculate the depth of the surface melt. Cu segregation near the position of the amorphous-crystalline interface gives evidence for a self-propagating melt, moving from the surface region towards the crystalline substrate. Measurements of As-redistribution and of sheet resistance as a function of laser energy density in As-implanted silicon are consistent with the crystallization model which is derived from the effects as observed in Cu-implanted silicon.The results imply a large difference in melting temperature, heat conductivity and heat of melting between amorphous silicon and crystalline silicon.

Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon

1986 ◽  
Vol 1 (1) ◽  
pp. 155-161 ◽  
Author(s):  
W. Sinke ◽  
F. W. Saris ◽  
J. C. Barbour ◽  
J. W. Mayer
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Low Energy ◽  
Fine Grained ◽  
Fine Grain ◽  
Fine Grained Material ◽  
Pulsed Laser Irradiation

Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.

Er-Doping in Silicon by Pulsed Laser Irradiation

1993 ◽  
Vol 301 ◽  
Author(s):  
Kenshiro Nakashima
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Energy Density ◽  
Er Doping ◽  
Erbium Ions ◽  
State Regime ◽  
Er Doped ◽  
Pulsed Laser Irradiation

ABSTRACTErbium ions were successfully doped in silicon by pulsed laser irradiation above the threshold laser energy density. Photoluminescence peaks at 1.54, 1.59 and 1.64 µm from Er-optical centers were observed after annealing of Er-doped samples. The intensity of the 1.54 µm Er-emission band increased upon increase in the laser energy density, and then gradually decreased after reaching the maximum, due to the laser sputtering of the silicon substrate. Oxygen atoms, which were unintentionally codoped with Er-ions, were found to be distributed in the same region as in Er-ions, and were suggested to play roles to activate Er-optical centers. The maximum concentration of Er-ions doped in the solid state regime were estimated to be the order of 1018 cm−3 by the Rutherford backscattering measurements.

Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

1984 ◽  
Vol 52 (26) ◽  
pp. 2360-2363 ◽  
Author(s):  
Michael O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Melting Temperature ◽  
Pulsed Laser ◽  
Explosive Crystallization ◽  
Pulsed Laser Irradiation

Doping of GaAs From Silane Decomposition Under Pulsed Laser Irradiation

1983 ◽  
Vol 29 ◽  
Author(s):  
D. Pribat ◽  
D. Dieumegard ◽  
B. Dessertenne ◽  
J. Chaplart
Keyword(s):  
High Pressure ◽  
Energy Density ◽  
Laser Irradiation ◽  
Sheet Resistance ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Compensation Mechanism ◽  
Yag Laser ◽  
Oxygen Penetration ◽  
Pulsed Laser Irradiation

ABSTRACTWe have studied silicon incorporation in GaAs subsequent to Nd-YAG laser irradiation through high pressure silane atmospheres. The process involves SiH4 pyrolysis at contact with a laser-melted GaAs surface, and incorporation of the released Si atoms in the melt. SIMS analyses have allowed us to study silicon incorporation as a function of SiH4 pressure, laser energy density and number of laser shots. The high sheet resistance of the doped layers indicates that the silicon atoms are poorly electrically activated. A compensation mechanism is discussed based on oxygen penetration from native GaAs oxide layers.

Stress Effects on Raman Measurements of Pulsed Laser Annealed Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
G. E. Jellison ◽  
R. F. Wood
Keyword(s):  
Raman Scattering ◽  
Laser Irradiation ◽  
Laser Annealing ◽  
Phonon Frequency ◽  
Pulsed Laser ◽  
Front Surface ◽  
Surface Region ◽  
Pulsed Laser Annealing ◽  
Anti Stokes ◽  
Pulsed Laser Irradiation

ABSTRACTIt has recently been shown that the front surface region of the silicon lattice is severely strained during pulsed laser irradiation. This uniaxial strain reduces the symmetry of the front surface region, resulting in additional shifts and splittings of the phonon frequency and changes in the Raman scattering tensor. It is shown that, for the case of pulsed laser irradiation, the phonon frequency is increased, and the 3-fold degenerate optical phonon is split into a singlet and a doublet. The changes in the Raman scattering tensor make it non-symmetric, and generally invalidate the technique used by Compaan et al. to determine the cross section experimentally. The complications introduced by the presence of stress during pulsed laser annealing, coupled with the temperature dependence of the optical and Raman tensors, make a simple interpretation of the Stokes to anti-Stokes ratio in terms of lattice temperature extremely unreliable.

scholarly journals Tin-Induced Crystallization of Amorphous Silicon under Pulsed Laser Irradiation

2017 ◽  
Vol 62 (9) ◽  
pp. 806-817
Author(s):  
V.B. Neimash V.B. ◽  
◽  
V. Melnyk ◽  
L.L. Fedorenko ◽  
P.Ye. Shepelyavyi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Induced Crystallization ◽  
Pulsed Laser Irradiation

Formation of polytype microstructure in pulsed-laser-irradiated sapphire substrates

1995 ◽  
Vol 53 ◽  
pp. 344-345
Author(s):  
Siqi Cao ◽  
A. J. Pedraza ◽  
L. F. Allard ◽  
D. H. Lowndes
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Electroless Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Modifications ◽  
Near Surface ◽  
Sapphire Substrates ◽  
Hcp Structure ◽  
Pulsed Laser Irradiation

Surface modifications of wide-gap materials are produced by pulsed laser irradiation. Under given conditions, these near-surface modifications can promote adhesion enhancement of deposited thin film materials, and activation for electroless deposition. AIN decomposes during laser irradiation leaving a metallic film on the surface. High density dislocations were observed in the surface layer of AIN that was laser melted but not decomposed. The laser melted alumina becomes amorphous at a laser energy density of ~1J/cm2. In sapphire, γ-alumina is formed when the sample is laser irradiated in Ar/4%H2. Here, we report the formation of a new structure in laser-irradiated sapphire.Optically polished c-axis sapphire substrates were laser-irradiated in an Ar/4%H2 atmosphere at 4J/cm2 energy density, using a 308 nm-wavelength laser with a pulse duration of ~40 ns. Sapphire (A12O3) has a space group R 3 c and can be described as an hcp structure having oxygen and aluminum layers alternately stacking along the c-axis.

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