Effect of the Flow Rate of the Precursor Gas on the Growth Rate of a Fluoropolymer Coating during Hot Wire Chemical Vapor Deposition

2018 ◽  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Fluoropolymer Coating

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Charles W. Teplin ◽  
Matthew Page ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert M. Ready ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Film Interface

AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Effect of SiH4 Flow Rates on the Structures and Properties of Si-Rich Silicon Nitride Films Prepared by Hot Wire Chemical Vapor Deposition

2019 ◽  
Vol 288 ◽  
pp. 135-139 ◽  
Author(s):  
Yan Sai Tian ◽  
Ai Ming Gao ◽  
Bing Qing Zhou
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Band Gap ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Light Transmittance ◽  
Silicon Cluster ◽  
Hot Wire

Silicon-rich silicon nitride thin films were deposited on the P type (100) of silicon and Corning7059 glass by hot-wire chemical vapor deposition method using SiH4 and NH3 as reaction gas source. The effects of SiH4 flow rate on the structures and optical properties of the thin films were studied under optimizing other deposition parameters. The structures, band gap width and surface morphology of the thin films were characterized by Fourier transform infrared absorption spectroscopy (FTIR), ultraviolet-visible (UV-VIS) light transmittance spectra and scanning electron microscope (SEM), respectively. The experiment results show that, with increasing of the SiH4 flow rate, the content of N and Si atoms in the thin films increases, and the Si-N bond density increases gradually, and the optical band gap of the films shows a trend of increasing. When the silane flow rate is less than 0.9sccm, there is no Si-H bond stretching vibration absorption peak, and silicon atoms mainly bond with nitrogen atoms. As the SiH4 flow rate decreases, silicon clusters embedded in silicon nitride matrix gradually become smaller. When SiH4 flow rate is 0.4sccm, we prepared the silicon cluster nanoparticles with an average diameter of about 50nm embedded in silicon nitride thin films matrix. Therefore, properly reduction of the SiH4 flow rate is favorable for preparing the smaller silicon cluster nanoparticles in silicon rich silicon nitride thin films. The results lay the foundation for the preparation of silicon quantum dots thin film materials.

Quality and Growth Rate of Hot-wire Chemical Vapor Deposition Epitaxial Si Layers

2008 ◽  
Vol 1066 ◽  
Author(s):  
Charles W Teplin ◽  
Ina T. Martin ◽  
Kim M. Jones ◽  
David Young ◽  
Manuel J. Romero ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Growth Phase ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
High Carrier ◽  
Substrate Temperatures

ABSTRACTFast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600°C. The resulting films exhibit low defect concentrations and high carrier mobilities.

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM

2008 ◽  
Vol 600-603 ◽  
pp. 151-154 ◽  
Author(s):  
Han Seok Seo ◽  
Ho Geun Song ◽  
Jeong Hyun Moon ◽  
Jeong Hyuk Yim ◽  
Myeong Sook Oh ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Doping Level ◽  
Chemical Vapor ◽  
Homoepitaxial Growth ◽  
Background Doping ◽  
Source Flow

Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.

Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC

2015 ◽  
Vol 821-823 ◽  
pp. 145-148 ◽  
Author(s):  
A.S. Segal ◽  
S.Yu. Karpov ◽  
A.V. Lobanova ◽  
E.V. Yakovlev ◽  
K. Hara ◽  
...  
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Thermodynamic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Quantitative Agreement ◽  
Competition Mechanism ◽  
Site Competition

Quasi-thermodynamic model of SiC doping with Al in CVD from C3H8, SiH4, and Al (CH3)3 on the Si-face is developed. The model is validated by quantitative agreement of calculated and experimental data on the Al concentration in SiC as a function of temperature, pressure, SiC growth rate, and TMAl flow rate. The model is shown to be consistent with the site competition mechanism of Al incorporation into SiC.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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