scholarly journals PULSE-ECHO MILLIMETER WAVE IN SITU SENSOR WITH 65 nm CMOS TRANSMITTER AND HETERODYNE RECEIVER ELECTRONICS

Author(s):  
Deacon Nemchick ◽  
M.-C. Chang ◽  
Gabriel Virbila ◽  
Yanghyo Kim ◽  
Adrian Tang ◽  
...  
1993 ◽  
Author(s):  
D. E. Kranbuehl ◽  
S. Hart ◽  
Y. Wang ◽  
D. F. Schwartz

Author(s):  
Chuyang Liu ◽  
Tao Jiang ◽  
Tian Gao ◽  
Guangxian Xia ◽  
Yufan Cao ◽  
...  

It is well known that both hard/soft magnetic exchange-coupling and ferroelectric-ferromagnetic coupling could facilitate the microwave absorption behavior. Herein, we propose the BaZrxFe12-xO19/Fe3O4/BaZrO3 composites to integrate the advantages of the...


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Tammy Chang ◽  
Saptarshi Mukherjee ◽  
Nicholas N. Watkins ◽  
David M. Stobbe ◽  
Owen Mays ◽  
...  

AbstractThis article presents a millimeter-wave diagnostic for the in-situ monitoring of liquid metal jetting additive manufacturing systems. The diagnostic leverages a T-junction waveguide device to monitor impedance changes due to jetted metal droplets in real time. An analytical formulation for the time-domain T-junction operation is presented and supported with a quasi-static full-wave electromagnetic simulation model. The approach is evaluated experimentally with metallic spheres of known diameters ranging from 0.79 to 3.18 mm. It is then demonstrated in a custom drop-on-demand liquid metal jetting system where effective droplet diameters ranging from 0.8 to 1.6 mm are detected. Experimental results demonstrate that this approach can provide information about droplet size, timing, and motion by monitoring a single parameter, the reflection coefficient amplitude at the input port. These results show the promise of the impedance diagnostic as a reliable in-situ characterization method for metal droplets in an advanced manufacturing system.


Author(s):  
K. Parow-Souchon ◽  
D. Cuadrado-Calle ◽  
S. Rea ◽  
M. Henry ◽  
M. Merritt ◽  
...  

Abstract Realizing packaged state-of-the-art performance of monolithic microwave integrated circuits (MMICs) operating at millimeter wavelengths presents significant challenges in terms of electrical interface circuitry and physical construction. For instance, even with the aid of modern electromagnetic simulation tools, modeling the interaction between the MMIC and its package embedding circuit can lack the necessary precision to achieve optimum device performance. Physical implementation also introduces inaccuracies and requires iterative interface component substitution that can produce variable results, is invasive and risks damaging the MMIC. This paper describes a novel method for in situ optimization of packaged millimeter-wave devices using a pulsed ultraviolet laser to remove pre-selected areas of interface circuit metallization. The method was successfully demonstrated through the optimization of a 183 GHz low noise amplifier destined for use on the MetOp-SG meteorological satellite series. An improvement in amplifier output return loss from an average of 12.9 dB to 22.7 dB was achieved across an operational frequency range of 175–191 GHz and the improved circuit reproduced. We believe that our in situ tuning technique can be applied more widely to planar millimeter-wave interface circuits that are critical in achieving optimum device performance.


Author(s):  
Krishnan Balasubramaniam ◽  
V. Vimal ◽  
Gary Boudreaux ◽  
R. Daniel Costley ◽  
Clinton Menezes ◽  
...  
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