2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium
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9781424451913

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Low-Cost CMOS-Based Receive Modules for 60 GHz Wireless Communication

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315705 ◽

2009 ◽

Cited By ~ 3

Author(s):

Piet Wambacq ◽

Kuba Raczkowski ◽

Valery Ramon ◽

Alexander Vasylchenko ◽

Amin Enayati ◽

...

Keyword(s):

Wireless Communication ◽

Low Cost ◽

60 Ghz

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A 140 GHz Heterodyne Receiver Chipset for Passive Millimeter Wave Imaging Applications

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315792 ◽

2009 ◽

Cited By ~ 2

Author(s):

S. Koch ◽

M. Guthoerl ◽

I. Kallfass ◽

A. Leuther ◽

S. Saito

Keyword(s):

Millimeter Wave ◽

Heterodyne Receiver ◽

Millimeter Wave Imaging ◽

Wave Imaging ◽

Passive Millimeter Wave Imaging

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Organizers

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315746 ◽

2009 ◽

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2x2 and 4x4 CMOS Switching Matrices for 0.01-12 GHz Applications

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315684 ◽

2009 ◽

Author(s):

Donghyup Shin ◽

Gabriel M. Rebeiz

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0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315739 ◽

2009 ◽

Cited By ~ 4

Author(s):

K. Krishnamurthy ◽

D. Green ◽

R. Vetury ◽

M. Poulton ◽

J. Martin

Keyword(s):

Power Amplifier ◽

Gan Hemt

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High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315761 ◽

2009 ◽

Author(s):

Shane T. Todd ◽

Xiaojun T. Huang ◽

John E. Bowers ◽

Noel C. MacDonald

Keyword(s):

Aspect Ratio ◽

Thermal Oxidation ◽

High Aspect Ratio

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The Evolution and Importance of Composition in RF Compound Semiconductors

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315803 ◽

2009 ◽

Author(s):

C. A. Barratt

Keyword(s):

Compound Semiconductors

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Benefactors

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315750 ◽

2009 ◽

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High Efficiency Digital GaN MMIC Power Amplifiers for Future Switch-Mode Based Mobile Communication Systems

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315720 ◽

2009 ◽

Cited By ~ 17

Author(s):

S. Maroldt ◽

C. Haupt ◽

R. Kiefer ◽

W. Bronner ◽

S. Mueller ◽

...

Keyword(s):

Mobile Communication ◽

Power Amplifiers ◽

Communication Systems ◽

High Efficiency ◽

Mobile Communication Systems ◽

Switch Mode

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Accurate HEMT Switch Large-Signal Device Model Derived from Pulsed-Bias Capacitance and Current Characteristics

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium ◽

10.1109/csics.2009.5315652 ◽

2009 ◽

Cited By ~ 6

Author(s):

Shinichiro Takatani ◽

Cheng-Duan Chen

Keyword(s):

Large Signal ◽

Device Model ◽

Current Characteristics

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2009 Annual IEEE Compound Semiconductor Integrated Circuit SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low-Cost CMOS-Based Receive Modules for 60 GHz Wireless Communication

A 140 GHz Heterodyne Receiver Chipset for Passive Millimeter Wave Imaging Applications

Organizers

2x2 and 4x4 CMOS Switching Matrices for 0.01-12 GHz Applications

0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology

High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal Oxidation, Electroplating, and Planarization

The Evolution and Importance of Composition in RF Compound Semiconductors

Benefactors

High Efficiency Digital GaN MMIC Power Amplifiers for Future Switch-Mode Based Mobile Communication Systems

Accurate HEMT Switch Large-Signal Device Model Derived from Pulsed-Bias Capacitance and Current Characteristics

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium
Latest Publications