Temperature-Dependent Infrared Characterization of Silicon Wafers

2009 ◽  
pp. 445-445-14
Author(s):  
DG Mead ◽  
RM Gummer ◽  
CR Anderson
Keyword(s):  
Silicon Wafers ◽  
Temperature Dependent

scholarly journals The G-Protein α-Subunit GasC Plays a Major Role in Germination in the Dimorphic FungusPenicillium marneffei

Genetics ◽  
2003 ◽  
Vol 164 (2) ◽  
pp. 487-499 ◽  
Author(s):  
Sophie Zuber ◽  
Michael J Hynes ◽  
Alex Andrianopoulos
Keyword(s):  
G Protein ◽  
Germination Rate ◽  
Yeast Cells ◽  
Class Iii ◽  
Temperature Dependent ◽  
Gene Encoding ◽  
Α Subunit ◽  
G Protein Α Subunit ◽  
Opportunistic Human Pathogen

AbstractThe opportunistic human pathogen Penicillium marneffei exhibits a temperature-dependent dimorphic switch. At 25°, multinucleate, septate hyphae that can undergo differentiation to produce asexual spores (conidia) are produced. At 37° hyphae undergo arthroconidiation to produce uninucleate yeast cells that divide by fission. This work describes the cloning of the P. marneffei gasC gene encoding a G-protein α-subunit that shows high homology to members of the class III fungal Gα-subunits. Characterization of a ΔgasC mutant and strains carrying a dominant-activating gasCG45R or a dominant-interfering gasCG207R allele show that GasC is a crucial regulator of germination. A ΔgasC mutant is severely delayed in germination, whereas strains carrying a dominant-activating gasCG45R allele show a significantly accelerated germination rate. Additionally, GasC signaling positively affects the production of the red pigment by P. marneffei at 25° and negatively affects the onset of conidiation and the conidial yield, showing that GasC function overlaps with functions of the previously described Gα-subunit GasA. In contrast to the S. cerevisiae ortholog Gpa2, our data indicate that GasC is not involved in carbon or nitrogen source sensing and plays no major role in either hyphal or yeast growth or in the switch between these two forms.

Necessity of a Thorough Characterization of Functionalized Silicon Wafers before Biointerface Studies

2011 ◽  
Vol 115 (22) ◽  
pp. 11102-11111 ◽  
Author(s):  
Judith Böhmler ◽  
Lydie Ploux ◽  
Vincent Ball ◽  
Karine Anselme ◽  
Arnaud Ponche
Keyword(s):  
Silicon Wafers

A characterization of heam uptake and intracellular distribution by isolated hepatocytes

1985 ◽  
Vol 5 (7) ◽  
pp. 609-614 ◽  
Author(s):  
A. Lodola
Keyword(s):  
Endoplasmic Reticulum ◽  
Specific Binding ◽  
Isolated Hepatocytes ◽  
Intracellular Distribution ◽  
Distribution Data ◽  
Temperature Dependent ◽  
Rat Hepatocyte ◽  
Isolated Rat ◽  
Endoplasmic Reticulum Fraction

The uptake and intracellular distribution of haem by isolated rat hepatocyte suspensions was studied. An increase in cell haem content occurred after a challenge with 5, 10 or 20 μM haem, supplied as methaemalbumin. The rate of haem uptake was temperature dependent; no non-specific binding occurred. Intracellular haem distribution data are consistent with a rapid association of haem with the endoplasmic reticulum fraction prior to its accumulation in the cytosol and at the mitochondrion.

Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

2005 ◽  
Author(s):  
C. Ballesteros ◽  
J. A. Garci´a ◽  
M. I. Orti´z ◽  
R. Rodri´guez ◽  
M. Varela
Keyword(s):  
Tribological Properties ◽  
Low Energy ◽  
Temperature Dependent ◽  
Structural Modifications ◽  
Nanocomposite Layer ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Nitrogen Ion ◽  
Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

scholarly journals 151Eu Mössbauer Spectroscopic Characterization of EuRu4B4 and the New Boride EuRuB4

2010 ◽  
Vol 65 (1) ◽  
pp. 90-94 ◽  
Author(s):  
Thomas Harmening ◽  
Rainer Pöttgen
Keyword(s):  
Boron Atom ◽  
Mössbauer Spectra ◽  
Induction Furnace ◽  
Spectroscopic Characterization ◽  
Two Dimensional ◽  
Temperature Dependent ◽  
X Ray ◽  
Trivalent Europium ◽  
Mossbauer Spectra

Samples of EuRu4B4 and of the new boride EuRuB4 were prepared from europium, RuB, and RuB4 precursor alloys, respectively, in sealed tantalum tubes in an induction furnace. EuRu4B4 crystallizes with the LuRu4B4 structure, a = 748.1(1), c = 1502.3(4) pm. The structure of EuRuB4 was refined on the basis of X-ray diffractometer data: Pbam, a = 599.7(1), b = 1160.7(3), c = 358.06(7) pm, wR2 = 0.0691, 474 F2 values, and 38 variables. The four crystallographically independent boron sites build up layers which consist of almost regular pentagons and heptagons which sandwich the ruthenium and europium atoms, respectively. Within the two-dimensional [B4] networks each boron atom has a slightly distorted trigonal-planar boron coordination with B-B distances in the range 172 - 186 pm. Temperature-dependent 151Eu Mössbauer spectra show stable trivalent europium for EuRu4B4 and EuRuB4

Temperature dependent optical and electrical characterization of SnS/CdS solar cell.

2021 ◽  
pp. 139069
Author(s):  
Taavi Raadik ◽  
Nicolae Spalatu ◽  
Jüri Krustok ◽  
Raavo Josepson ◽  
Maarja Grossberg
Keyword(s):  
Solar Cell ◽  
Electrical Characterization ◽  
Temperature Dependent

Nondestructive Photoelastic and Machine Learning Characterization of Surface Cracks and Prediction of Weibull Parameters for Photovoltaic Silicon Wafers

2021 ◽  
pp. 1-40
Author(s):  
Logan Rowe ◽  
Alexander J. Kaczkowski ◽  
Tung-Wei Lin ◽  
Gavin Horn ◽  
Harley Johnson
Keyword(s):  
Machine Learning ◽  
Learning Algorithm ◽  
Tensile Load ◽  
Silicon Wafers ◽  
Uniaxial Tensile ◽  
Support Vector ◽  
Weibull Parameters ◽  
Bulk Stress ◽  
Wire Motion

Abstract A nondestructive photoelastic method is presented for characterizing surface microcracks in monocrystalline silicon wafers, calculating the strength of the wafers, and predicting Weibull parameters under various loading conditions. Defects are first classified from through thickness infrared photoelastic images using a support vector machine learning algorithm. Characteristic wafer strength is shown to vary with the angle of applied uniaxial tensile load, showing greater strength when loaded perpendicular to the direction of wire motion than when loaded along the direction of wire motion. Observed variations in characteristic strength and Weibull shape modulus with applied tensile loading direction stem from the distribution of crack orientations and the bulk stress field acting on the microcracks. Using this method it is possible to improve manufacturing processes for silicon wafers by rapidly, accurately, and nondestructively characterizing large batches in an automated way.

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