Characterization of Calcium Fluoride Optical Surfaces

2009 ◽  
pp. 532-532-10
Author(s):  
M Law ◽  
J Bender ◽  
CK Carniglia
Keyword(s):  
Calcium Fluoride ◽  
Optical Surfaces

Knife-edge test for characterization of subnanometer deformations in micro-optical surfaces

1999 ◽  
Author(s):  
Frederic Zamkotsian ◽  
Kjetil Dohlen ◽  
Patrick Lanzoni ◽  
Silvio P. Mazzanti ◽  
Marie-Laurence Michel ◽  
...  
Keyword(s):  
Knife Edge ◽  
Optical Surfaces

scholarly journals Characterization of all second-order nonlinear-optical coefficients of organic N-benzyl-2-methyl-4-nitroaniline crystal

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Takashi Notake ◽  
Masahiro Takeda ◽  
Shuji Okada ◽  
Takuya Hosobata ◽  
Yutaka Yamagata ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Organic Materials ◽  
Second Order ◽  
Organic N ◽  
Application Study ◽  
Optical Surfaces ◽  
Nlo Property ◽  
Diamond Blade ◽  
First Time

Abstract Full elements of second-order nonlinear optical (NLO) tensor can be completely characterized for an organic NLO crystal for the first time. As-grown bulk N-benzyl-2-methyl-4-nitroaniline (BNA) crystal was processed to expose (100) and (010) crystal orientations with fine optical surfaces by using precision lathe and diamond blade. Then, every five nonvanishing second-order NLO coefficient of BNA can be determined quantitatively using the precisely processed crystals based on 1st-kind Maker fringe measurements. Our method makes it possible to clarify uncertain NLO property of any organic materials and to accelerate application study via precise device fabrications even for fragile organic materials.

The Electronic Properties of Epitaxial Calcium Fluoride-Silicon Structures

1985 ◽  
Vol 54 ◽  
Author(s):  
T. P. Smith ◽  
J. M. Phillips ◽  
R. People ◽  
J. M. Gibson ◽  
L. Pfeiffer ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Material Properties ◽  
Calcium Fluoride ◽  
Minority Carrier ◽  
Electronic Devices ◽  
Epitaxial Films ◽  
High Quality ◽  
Silicon Structures

ABSTRACTThe characterization of electronic devices using epitaxial CaF2 on Si is described. In addition, the growth and annealing techniques used to obtain high quality epitaxial films are discussed. In particular, the results of using rapid thermal annealing to improve the epitaxial quality of CaF2 films are presented in detail.The electronic and electrical properties of these structures are very promising. Epitaxial CaF2 films with breakdown fields as high as 3 × 106 V/cm and interface trap densities as low as 7 × 1010cm-2eV-1 have been fabricated. In addition, minority carrier dominated trapping has been observed at the CaF2 /Si interface. Finally, the material properties of these structures, as determined by Rutherford backscattering, channeling, and electron microscopy, are discussed and correlated with their electronic properties.

scholarly journals Edge clustered fitting grids for φ-polynomial characterization of freeform optical surfaces

2011 ◽  
Vol 19 (27) ◽  
pp. 26962 ◽  
Author(s):  
Ilhan Kaya ◽  
Kevin P. Thompson ◽  
Jannick P. Rolland
Keyword(s):  
Optical Surfaces
Sign in / Sign up

Export Citation Format

Share Document