The Electronic Properties of Epitaxial Calcium Fluoride-Silicon Structures

1985 ◽  
Vol 54 ◽  
Author(s):  
T. P. Smith ◽  
J. M. Phillips ◽  
R. People ◽  
J. M. Gibson ◽  
L. Pfeiffer ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Material Properties ◽  
Calcium Fluoride ◽  
Minority Carrier ◽  
Electronic Devices ◽  
Epitaxial Films ◽  
High Quality ◽  
Silicon Structures

ABSTRACTThe characterization of electronic devices using epitaxial CaF2 on Si is described. In addition, the growth and annealing techniques used to obtain high quality epitaxial films are discussed. In particular, the results of using rapid thermal annealing to improve the epitaxial quality of CaF2 films are presented in detail.The electronic and electrical properties of these structures are very promising. Epitaxial CaF2 films with breakdown fields as high as 3 × 106 V/cm and interface trap densities as low as 7 × 1010cm-2eV-1 have been fabricated. In addition, minority carrier dominated trapping has been observed at the CaF2 /Si interface. Finally, the material properties of these structures, as determined by Rutherford backscattering, channeling, and electron microscopy, are discussed and correlated with their electronic properties.

Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Structural Quality ◽  
High Quality ◽  
Auger Analysis ◽  
Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

Growth of GaN epilayers on Si(111) substrates using multiple buffer layers

2001 ◽  
Vol 693 ◽  
Author(s):  
P.R. Hageman ◽  
S. Haffouz ◽  
A. Grzegorczk ◽  
V. Kirilyuk ◽  
P.K. Larsen
Keyword(s):  
Atomic Force Microscopy ◽  
Epitaxial Films ◽  
Buffer Layers ◽  
High Quality ◽  
Nucleation Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Intermediate Layers ◽  
Vapor Deposition Technique

AbstractWe present a study of the growth of high quality GaN films on Si(111) substrates by MetalOrganic Chemical Vapor Deposition technique. In order to improve the quality of the epitaxial films we introduced different nucleation or buffer layers and combinations of them. Our results obtained on an optimized AlN nucleation layer will serve as reference point. In order to improve the quality of the epitaxial films we introduced different combinations of nucleation and intermediate layers. The first combination consists of an optimized AlN nucleation layer followed by a 1 m-thick GaN film, on which we deposited SixNy/GaN intermediate layers. Based on the optimized AlN nucleation layer, we introduced AlGaN/GaN superlattices or AlN intermediate buffer layers. Additionally, we present results on the modification the Si(111) surface with NH3 to promote nucleation from selective GaN islands. In all experiments the total thickness of the GaN epilayers was 3 m m. X-ray diffraction, photoluminescence, Hall measurements and atomic force microscopy were used in order to elucidate the effectiveness of these growth processes. For the most successful deposition scheme, the one with the SixNy/GaN intermediate layers, the resulting GaN layers are of high quality as compared to the other methods. The donor bound exciton, which dominates the photoluminescence spectrum, showed a full width at half maximum (FWHM) of about 50 meV at room temperature and 10 meV at 4K. The FWHM of the symmetric (0002) rocking curves in w-scan is about 640 arcsec. The root-mean-square roughness, as measured by atomic force microscopy, does not exceed 10 Å.

Finite Element Analysis on Soft-Pad Grinding of Wire-Sawn Silicon Wafers

2002 ◽  
Author(s):  
X. J. Xin ◽  
Z. J. Pei ◽  
Wenjie Liu
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Material Properties ◽  
Silicon Wafers ◽  
Semiconductor Material ◽  
Surface Grinding ◽  
High Quality ◽  
Element Analysis ◽  
Conventional Grinding

Silicon is the primary semiconductor material used to fabricate microchips. The quality of microchips depends directly on the quality of starting silicon wafers. A series of processes are required to manufacture high quality silicon wafers. Surface grinding is one of the processes used to flatten the wire-sawn wafers. A major issue in grinding of wire-sawn wafers is the reduction and elimination of wire-sawing induced waviness. Several approaches (namely, combination of grinding and lapping, reduced chuck vacuum, soft-pad, and wax mounting) have been proposed to address this issue. The results of finite element analysis modeling of these approaches have shown that soft-pad grinding is the most promising approach since it is very effective in reducing the waviness and very easy to be adopted to conventional grinding environment. This paper presents a study of finite element analysis on soft-pad grinding of wire-sawn silicon wafers, covering the mechanisms of waviness reduction and the effects of pad material properties.

Fabrication and Characterization of High Quality Micro Diamonds by Hot Filament CVD

2011 ◽  
Vol 325 ◽  
pp. 582-587
Author(s):  
T. Zhang ◽  
Fang Hong Sun ◽  
Bin Shen ◽  
Z.M. Zhang
Keyword(s):  
Silicon Wafer ◽  
Chemical Vapor ◽  
High Quality ◽  
Acetone Concentration ◽  
Vapor Deposition Technique ◽  
Hot Filament Cvd ◽  
Average Size ◽  
Hot Filament

The high quality micro diamonds with the euhedral diamond faces are fabricated by hot filament chemical vapor deposition technique (HFCVD). The high pressure and high temperature (HPHT) single crystal diamonds in size of 1 μm are used as seeds. In order to disperse the diamond seeds uniformly on a silicon wafer, the photoresist solution with diamond seeds are performed on the silicon wafer by a spin coater machine. The high substrate temperature and low acetone concentration are employed for decreasing the nucleation rate and accelerating the growth rate. The morphology and quality of the micro diamonds are observed and analyzed by SEM and Raman spectroscopy. After 4 hours of the deposition, the surface imperfections of the diamond seeds have disappeared completely, and the euhedral diamond faces with (111) and (100) begin to emerge. Subsequently, 8 hours of deposition leads to a final average size of approximately 4 μm. The micro diamonds have very high quality, and the surfaces appear flat and smooth in this stage. The results indicate that it is an effective way to eliminate the defects of the HPHT micro diamonds and develop high quality diamonds with well-defined morphology by HFCVD technique.

scholarly journals Ampelographic and oenological characterization of the ancient grapevine cv. Dobričić grown in the coastal region of Croatia

OENO One ◽  
2012 ◽  
Vol 46 (4) ◽  
pp. 263
Author(s):  
Goran Zdunić ◽  
Irena Budić-Leto ◽  
Urska Vrhovsek ◽  
Iva Tomić-Potrebuješ ◽  
Edi Maletić
Keyword(s):  
Coastal Region ◽  
Red Wines ◽  
High Quality ◽  
Virus Incidence ◽  
High Virus ◽  
First Time ◽  
Outstanding Quality ◽  
Selection Of

<p style="text-align: justify;"><strong>Aims</strong>:A four-year study (2007 through 2010) was carried out to determine agronomic, biological, and oenological characteristics of Dobričić grapevines so as to evaluate this cultivar and protect it from extinction.</p><p style="text-align: justify;"><strong>Methods and results</strong>: 38 characteristics from the OIV descriptor list were used to describe young shoot, mature leaf, cluster, and berry morphology of Dobričić grapevines. The dimensions of an average leaf were constructed from measured leaf variables. A typical Dobričić genotype at nine microsatellite loci is presented. ELISA analysis revealed high virus incidence and all samples tested were GLRaV-3 positive. The profile of different classes of polyphenols in Dobričić wine was determined using HPLC and spectrophotometry. The concentrations of polyphenols in Dobričić wine, especially anthocyanins, hydroxycinnamic acids and stilbenes, were high compared to major red wines reported in the literature. Descriptive sensory analysis was carried out to determine the aroma attributes describing a Dobričić monovarietal wine.</p><p style="text-align: justify;"><strong>Conclusion</strong>: Knowledge of the biodiversity of the grapevine cultivars of Croatia is still scant. This study provides for the first time ampelographic and oenological information on Dobričić grapevines and demonstrates its high quality potential.</p><p style="text-align: justify;"><strong>Significance and impact of the study</strong>: The results of the ampelographic characterization would be helpful in the identification and selection of Dobričić for cultivation in certain vine-growing areas. The outstanding quality of Dobričić makes it very promising for wine blending (colour improvement) and plant breeding purposes.</p>

scholarly journals Characterization of Tuna Jerky with the Addition of Seaweed (Eucheuma cottonii) Flour

2019 ◽  
Vol 22 (2) ◽  
pp. 273-286
Author(s):  
Reni Lobo ◽  
Joko Santoso ◽  
Bustami Ibrahim
Keyword(s):  
Heavy Metal ◽  
Protein Content ◽  
Paired Comparison ◽  
Research Result ◽  
Proximate Analysis ◽  
Gel Strength ◽  
High Quality ◽  
Eucheuma Cottonii

Fish jerky has hard texture which could make the appearance became less attractive to consumers. The aim of this study was to characterize tuna jerky with the addition of seaweed flour E. cottonii in order to increase acceptability by consumers. Result shown that seaweed flour characterization was consisted dietary fiber 73.95±0.45%, viscosity 107.02±0.51 cPs, gel strength 435.03±4.99 g/cm2, carageenan 54.56±0.18%, heavy metal Hg was <0.002 ppm, Pb was <0.004 ppm and Cd was 0.063±0.001 ppm, water content 12.63±0.08% and yield 6.07±0.08%. Based on research result, the additional of 2.5% E. cottonii concentration flour resulting high quality jerky with appearance value was 7.60, flavour was 7.67, texture was 5.7 and taste was 7.63 from 1-9 scales. Result from paired comparison test against commercial jerky (beef) resulting positive value, that means the quality of tuna jerky had better quality compared to commercial jerky and well accepted by panelist. Proximate analysis of tuna jerky shown that protein content 30.24±0.1%, water 11.32±0.02%, lipid 3.03±0.00% and ash 5.69±0.06%. Texture analysis results shown hardness 827.50±15.67, adhesiveness 0.09±0.02 and fracture 10.95±2.24.

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7626-7632 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
High Quality ◽  
Aluminum Films ◽  
Sapphire Substrates

2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].

scholarly journals Characterization of high-quality MgB2(0001) epitaxial films on Mg(0001)

2006 ◽  
Vol 8 ◽  
pp. 12-12 ◽  
Author(s):  
Luca Petaccia ◽  
Cinzia Cepek ◽  
Silvano Lizzit ◽  
Rosanna Larciprete ◽  
Roberto Macovez ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
High Quality

scholarly journals Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime

2018 ◽  
Vol 483 ◽  
pp. 57-64 ◽  
Author(s):  
Maulid M. Kivambe ◽  
Douglas M. Powell ◽  
Sergio Castellanos ◽  
Mallory Ann Jensen ◽  
Ashley E. Morishige ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Silicon ◽  
High Quality

scholarly journals PIN–PMN–PT piezoelectric crystals with increased rhombohedral-to-tetragonal phase transition temperature

2014 ◽  
Vol 04 (01) ◽  
pp. 1450001 ◽  
Author(s):  
Jun Luo ◽  
Shujun Zhang ◽  
Wesley Hackenberger ◽  
Thomas R. Shrout
Keyword(s):  
Phase Transition ◽  
Tetragonal Phase ◽  
The Self ◽  
Cubic Phase ◽  
High Quality ◽  
Piezoelectric Crystals ◽  
Phase Transition Temperatures ◽  
Tetragonal Phase Transition

In this work, crystal growth and characterization of PIN–PMN–PT (29–59% PIN and 28–35% PT) were conducted to understand how PIN ratio in the PIN–PMN–PT system impacts its phase stability during crystallization. High-quality PIN–PMN–PT crystals with 36% PIN were obtained using the self-seeded Bridgman process, even though the cubic phase In 2 O 3 formed at the very beginning of solidification. The melt became more unstable when the PIN ratio in the PIN–PMN–PT system increased to 49% and above, which affected the composition and quality of the as-grown crystals significantly. By increasing the PIN to 36% in PIN–PMN–PT crystal, the rhombohedral-to-tetragonal phase transition temperatures and the coercive field reached 115–135°C and 4.5~5.6 kV/cm, respectively, that greatly expanded the operation domains compared to PMN–PT crystals.

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