Titanium as Anode (and Cathode) Substrate Material for Industrial Electrolytic Applications

2008 ◽  
pp. 3-3-4 ◽  
Author(s):  
MYC Woo
Keyword(s):  
Substrate Material ◽  
Cathode Substrate

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Distortion in lattice-resolution scanned-probe microscope images

1993 ◽  
Vol 51 ◽  
pp. 522-523
Author(s):  
L. Fei
Keyword(s):  
Film Studies ◽  
Lattice Structure ◽  
Substrate Material ◽  
Repulsive Force ◽  
Instrument Calibration ◽  
Microscope Images ◽  
Probe Microscope ◽  
Electron Microscopes ◽  
Diffraction Patterns ◽  
Lattice Resolution

Scanned probe microscopes (SPM) have been widely used for studying the structure of a variety material surfaces and thin films. Interpretation of SPM images, however, remains a debatable subject at best. Unlike electron microscopes (EMs) where diffraction patterns and images regularly provide data on lattice spacings and angles within 1-2% and ∽1° accuracy, our experience indicates that lattice distances and angles in raw SPM images can be off by as much as 10% and ∽6°, respectively. Because SPM images can be affected by processes like the coupling between fast and slow scan direction, hysteresis of piezoelectric scanner, thermal drift, anisotropic tip and sample interaction, etc., the causes for such a large discrepancy maybe complex even though manufacturers suggest that the correction can be done through only instrument calibration.We show here that scanning repulsive force microscope (SFM or AFM) images of freshly cleaved mica, a substrate material used for thin film studies as well as for SFM instrument calibration, are distorted compared with the lattice structure expected for mica.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

Challenges and Issues in the Design of Micro-Machined Antennas - A Review

2020 ◽  
Vol 13 ◽  
Author(s):  
Ashish Kumar ◽  
Amar Partap Singh Pharwaha
Keyword(s):  
Patch Antenna ◽  
Ground Plane ◽  
Substrate Material ◽  
Review Article ◽  
High Index ◽  
Performance Characteristics ◽  
Machining Process ◽  
Patch Antennas ◽  
Micro Machining ◽  
The Impact

Background: Patch antennas are composed of the substrate material with patch and ground plane on the both sides of the substrate. The dimensions and performance characteristics of the antenna are highly influenced by the choice of the appropriate substrate depending upon the value of their dielectric constant. Generally, low index substrate materials are used to design the patch antenna but there are also some of the applications, which require the implementation of patch antenna design on high index substrate like silicon and gallium arsenide. Objective: The objective of this article is to review the design of antennas developed on high index substrate and the problems associated with the use of these materials as substrate. Also, main challenges and solutions have been discussed to improve the performance characteristics while using the high index substrates. Method: The review article has divided into various sections including the solution of the problems associated with the high index substrates in the form of micro-machining process. Along with this, types of micro machining and their applications have discussed in detail. Results: This review article investigates the various patch antennas designed with micro-machining technology and also discusses the impact of micro-machining process on the performance parameters of the patch antennas designed on high index substrates. Conclusion: By using the micro-machining process, the performance of patch antenna improves drastically but fabrication and tolerances at such minute structures is very tedious task for the antenna designers.

METHODS OF IMPROVING ACCURACY OF MEASURING OUTPUT CHARACTERISTICS OF TENSOMETRIC ELEMENTS AND TESTMODULES

2018 ◽  
pp. 10-19
Author(s):  
S. A. Adarchin ◽  
A. V. Mazin
Keyword(s):  
Pressure Sensors ◽  
Control Object ◽  
Complete Information ◽  
Substrate Material ◽  
Automated Control ◽  
Urgent Task ◽  
Technical Specifications ◽  
Output Characteristics ◽  
Improving Accuracy ◽  
Microprocessor Technology

Over the past few years, thanks to the success of microprocessor technology, there has been a significant leap in the development and application of automated control systems. In such systems, information obtained from a set of sensors installed on the control object and giving complete information about it is used to form the control action. Improving the accuracy of measurement of their characteristics becomes an urgent task. This paper is considered to study of the processes of degradation of microelectromechanical structures of integral measuring tensometric elements, for example, pressure sensors, expressed in the obtaining of the output characteristics of the sensor for the regulations set forth in the technical specifications. The technique allowing to measure the parameters of the output signal of the strain cell with the help of a special installation is developed. The results of the experiments determined that when using material with a small modulus of elasticity can be used for the planting element, any substrate material of test module. The developed technique can be used in the production and design of the strain gauge, and the sensor as a whole.

Determination of Charge Coefficient of Piezoelectric Films Using a Combined Finite Element Model and Dynamic Loading Technique

2020 ◽  
Vol 835 ◽  
pp. 229-242
Author(s):  
Oboso P. Bernard ◽  
Nagih M. Shaalan ◽  
Mohab Hossam ◽  
Mohsen A. Hassan
Keyword(s):  
Finite Element ◽  
Dynamic Loading ◽  
Material Properties ◽  
Accurate Determination ◽  
Substrate Material ◽  
Experimental Results ◽  
Piezoelectric Composite ◽  
Piezoelectric Film ◽  
Piezoelectric Charge

Accurate determination of piezoelectric properties such as piezoelectric charge coefficients (d33) is an essential step in the design process of sensors and actuators using piezoelectric effect. In this study, a cost-effective and accurate method based on dynamic loading technique was proposed to determine the piezoelectric charge coefficient d33. Finite element analysis (FEA) model was developed in order to estimate d33 and validate the obtained values with experimental results. The experiment was conducted on a piezoelectric disc with a known d33 value. The effect of measuring boundary conditions, substrate material properties and specimen geometry on measured d33 value were conducted. The experimental results reveal that the determined d33 coefficient by this technique is accurate as it falls within the manufactures tolerance specifications of PZT-5A piezoelectric film d33. Further, obtained simulation results on fibre reinforced and particle reinforced piezoelectric composite were found to be similar to those that have been obtained using more advanced techniques. FE-results showed that the measured d33 coefficients depend on measuring boundary condition, piezoelectric film thickness, and substrate material properties. This method was proved to be suitable for determination of d33 coefficient effectively for piezoelectric samples of any arbitrary geometry without compromising on the accuracy of measured d33.

scholarly journals Preparation and Degradation Characteristics of MAO/APS Composite Bio-Coating in Simulated Body Fluid

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 667
Author(s):  
Zexin Wang ◽  
Fei Ye ◽  
Liangyu Chen ◽  
Weigang Lv ◽  
Zhengyi Zhang ◽  
...  
Keyword(s):  
Simulated Body Fluid ◽  
Composite Coating ◽  
Body Fluid ◽  
Composite Coatings ◽  
Degradation Process ◽  
Ceramic Coatings ◽  
Immersion Test ◽  
Substrate Material ◽  
Atmospheric Plasma

In this work, ZK60 magnesium alloy was employed as a substrate material to produce ceramic coatings, containing Ca and P, by micro-arc oxidation (MAO). Atmospheric plasma spraying (APS) was used to prepare the hydroxyapatite layer (HA) on the MAO coating to obtain a composite coating for better biological activity. The coatings were examined by various means including an X-ray diffractometer, a scanning electron microscope and an energy spectrometer. Meanwhile, an electrochemical examination, immersion test and tensile test were used to evaluate the in vitro performance of the composite coatings. The results showed that the composite coating has a better corrosion resistance. In addition, this work proposed a degradation model of the composite coating in the simulated body fluid immersion test. This model explains the degradation process of the MAO/APS coating in SBF.

scholarly journals Strain effects on polycrystalline germanium thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Growth Promotion ◽  
Large Strain ◽  
Compressive Strain ◽  
Substrate Material ◽  
Large Crystal ◽  
Solid Phase Crystallization ◽  
Strain Effects ◽  
Thin Film Devices

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

scholarly journals A Novel Electrically Small Ground-Penetrating Radar Patch Antenna with a Parasitic Ring for Respiration Detection

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 1930
Author(s):  
Di Shi ◽  
Taimur Aftab ◽  
Gunnar Gidion ◽  
Fatma Sayed ◽  
Leonhard M. Reindl
Keyword(s):  
Ground Penetrating Radar ◽  
Patch Antenna ◽  
Low Cost ◽  
Substrate Material ◽  
Geometric Parameters ◽  
Gas Explosions ◽  
Aerial Vehicle ◽  
Electromagnetic Characteristics ◽  
Ground Penetrating ◽  
Quick Search

An electrically small patch antenna with a low-cost high-permittivity ceramic substrate material for use in a ground-penetrating radar is proposed in this work. The antenna is based on a commercial ceramic 915 MHz patch antenna with a size of 25 × 25 × 4 mm3 and a weight of 12.9 g. The influences of the main geometric parameters on the antenna’s electromagnetic characteristics were comprehensively studied. Three bandwidth improvement techniques were sequentially applied to optimize the antenna: tuning the key geometric parameters, adding cuts on the edges, and adding parasitic radiators. The designed antenna operates at around 1.3 GHz and has more than 40 MHz continuous −3 dB bandwidth. In comparison to the original antenna, the −3 and −6 dB fractional bandwidth is improved by 1.8 times and 4 times, respectively. Two antennas of the proposed design together with a customized radar were installed on an unmanned aerial vehicle (UAV) for a quick search for survivors after earthquakes or gas explosions without exposing the rescue staff to the uncertain dangers of moving on the debris.

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