Recombination Lifetimes in Silicon

2009 ◽  
pp. 5-5-13
Author(s):  
DK Schroder
Keyword(s):  
Recombination Lifetimes

Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates

1992 ◽  
Vol 61 (1) ◽  
pp. 67-69 ◽  
Author(s):  
J. Christen ◽  
M. Grundmann ◽  
E. Kapon ◽  
E. Colas ◽  
D. M. Hwang ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Carrier Capture ◽  
Ultrafast Carrier ◽  
Recombination Lifetimes

Absorption cross sections and Auger recombination lifetimes in inverted core-shell nanocrystals: Implications for lasing performance

2006 ◽  
Vol 99 (3) ◽  
pp. 034309 ◽  
Author(s):  
J. Nanda ◽  
S. A. Ivanov ◽  
H. Htoon ◽  
I. Bezel ◽  
A. Piryatinski ◽  
...  
Keyword(s):  
Cross Sections ◽  
Auger Recombination ◽  
Core Shell ◽  
Absorption Cross ◽  
Recombination Lifetimes

scholarly journals Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

2017 ◽  
Vol 254 (8) ◽  
pp. 1600675 ◽  
Author(s):  
Saroj Kanta Patra ◽  
Tong Wang ◽  
Tim J. Puchtler ◽  
Tongtong Zhu ◽  
Rachel A. Oliver ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Experimental Analysis ◽  
Radiative Recombination ◽  
Recombination Lifetimes

Distribution of recombination lifetimes in doped a-Si:H

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 899-901 ◽  
Author(s):  
David K. Biegelsen ◽  
Robert A. Street ◽  
Warren B. Jackson
Keyword(s):  
Recombination Lifetimes

Development and Application of Electroluminescence Imaging for CdS/CdTe Characterization

2003 ◽  
Vol 763 ◽  
Author(s):  
Scott Feldman ◽  
Fred Seymour ◽  
Tim Ohno ◽  
Victor Kaydanov ◽  
Reuben Collins
Keyword(s):  
Short Circuit ◽  
Ccd Camera ◽  
Short Circuit Current ◽  
Processing Parameters ◽  
Carrier Injection ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Recombination Lifetimes ◽  
Insight Into ◽  
Injection Rates

AbstractA technique for spatially resolved optical characterization of CdS/CdTe thin film solar cells has been developed using electroluminescence (EL). In EL, excess minority carriers are injected via forward biasing. Light produced in radiative carrier recombination is collected with a CCD camera. Because EL intensity depends upon radiative vs. non-radiative recombination lifetimes, EL provides insight into material quality.Spatial resolution is a key benefit of EL as it provides insight into the non-uniformities of polycrystalline CdTe. At high magnification the resolution is diffraction limited, but coarser measurements of up to several millimeters in range may also be made. Non-uniformities in emission have been observed throughout this range.Further benefits of EL as a characterization technique are as follows: EL probes the region of most interest, namely the CdTe near the main junction. Also, it is observable at room temperature and data acquisition is fast. Finally, EL is observable at very low carrier injection rates, comparable to short circuit current. (Though more structure is often revealed at higher injection rates.) This low injection means that EL can be a non-destructive probe. This fact, along with the aforementioned ease of observation, means that EL could possibly be used for quality control and in situ testing of modules.Data gathered from CdS/CdTe cells from various institutions deposited using different methods such as close spaced sublimation, vapor transport, and sputtering are presented. In addition to changes in deposition technique, changes in processing parameters were observed to affect EL emission. Furthermore, overall EL emission decreased noticeably with stress at various biases and elevated temperature, with non-uniformity increasing in many cases. Changes in EL become apparent before changes in parameters acquired with standard current-voltage measurements, suggesting that this technique can be used as an early indicator for degrading cells. Finally, some dramatic changes in EL with stress suggest highly non-uniform degradation of the back contact.

Photoconductive Properties of GaAs1−xNx Double Heterostructures as a Function of Excitation Wavelength

1999 ◽  
Vol 607 ◽  
Author(s):  
R. K. Ahrenkiel ◽  
A. Mascarenhas ◽  
S. W. Johnston ◽  
Y Zhang ◽  
D. J. Friedman ◽  
...  
Keyword(s):  
Spectral Response ◽  
Nitrogen Addition ◽  
Excitation Wavelength ◽  
Band Model ◽  
Excitation Spectra ◽  
Recombination Lifetime ◽  
Double Heterostructures ◽  
Ternary Semiconductor ◽  
Bandgap Semiconductors ◽  
Recombination Lifetimes

AbstractThe ternary semiconductor GaAs1−xNx with 0 < x < 0.3 can be grown epitaxially on GaAs and has a very large bowing coefficient. The alloy bandgap can be reduced to about 1.0 eV with about a 3% nitrogen addition. In this work, we measlired the internal spectral response and recombination lifetime of a number of alloys using the ultra-high frequency photoconductive decay (UHFPCD) method. The data shows that the photoconductive excitation spectra of the GaAs0.97N0.03 alloy shows a gradual increase in response through the absorption edge near Eg. This contrasts with most direct bandgap semiconductors that show a steep onset of photoresponse at Eg. The recombination lifetimes frequently are much longer than expected from radiative recombination and often exceeded 1.0 µs. The data was analyzed in terms of a band model that includes large potential fluctuations in the conduction band due to the random distribution of nitrogen atoms in the alloy.

Sign in / Sign up

Export Citation Format

Share Document