Gate Oxide Reliability Assessment and Some Connections to Oxide Integrity

2008 ◽  
pp. 3-3-21
Author(s):  
DJ Dumin
Keyword(s):  
Reliability Assessment ◽  
Gate Oxide ◽  
Oxide Reliability

Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications

2013 ◽  
Author(s):  
Thomas Santini ◽  
Morand Sebastien ◽  
Miller Florent ◽  
Luong-Viet Phung ◽  
Bruno Allard
Keyword(s):  
High Temperature ◽  
Reliability Assessment ◽  
Gate Oxide ◽  
Oxide Reliability

Gate oxide Reliability assessment optimization

2002 ◽  
Vol 42 (9-11) ◽  
pp. 1505-1508
Author(s):  
F. Monsieur ◽  
E. Vincent ◽  
D. Roy ◽  
S. Bruyère ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Reliability Assessment ◽  
Gate Oxide ◽  
Oxide Reliability

A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation

2016 ◽  
Vol 858 ◽  
pp. 433-436
Author(s):  
Keiichi Yamada ◽  
Junji Senzaki ◽  
Kazutoshi Kojima ◽  
Hajime Okumura
Keyword(s):  
Reliability Assessment ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Analysis Method ◽  
Mos Capacitor ◽  
Oxide Reliability ◽  
Novel Approach ◽  
Evaluation Time ◽  
Gate Oxide Thickness ◽  
Conduction Properties

The new indicators, effective gate oxide thickness tc and effective gate electrode area D, and their combination are applied for a new analysis method of Fowler-Nordheim (F-N) tunneling characteristics in MOS capacitor having oxide thickness fluctuation. This method considering the conduction properties of F-N tunneling characteristics correlates its characteristics to the oxide reliability. These indicators quantified with the influence of the oxide thickness fluctuation can provide the net values of the electric field and the current density on the gate oxide. This new analysis method will lead to reducing the evaluation time for the reliability assessment.

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

The impact of F contamination induced by the process on the gate oxide reliability

1998 ◽  
Vol 38 (2) ◽  
pp. 255-258 ◽  
Author(s):  
G Ghidini ◽  
C Clementi ◽  
D Drera ◽  
F Maugain
Keyword(s):  
Gate Oxide ◽  
Oxide Reliability ◽  
The Impact

Impacts of Area-Dependent Defects on the Yield and Gate Oxide Reliability of SiC Power MOSFETs

2021 ◽  
Author(s):  
Tianshi Liu ◽  
Shengnan Zhu ◽  
Michael Jin ◽  
Limeng Shi ◽  
Marvin H. White ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Power Mosfets ◽  
Oxide Reliability
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