Temperature Dependence of Photoluminescence Spectra in Polystyrene

2020 ◽  
Vol 9 (1) ◽  
pp. 20200093
Author(s):  
K. Tsagli ◽  
S. V. Dordevic
1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.


2000 ◽  
Vol 214-215 ◽  
pp. 770-773 ◽  
Author(s):  
Yasuhiro Murase ◽  
Takeshi Ota ◽  
Nobuhiro Yasui ◽  
Akihiro Shikimi ◽  
Tsuguki Noma ◽  
...  

2019 ◽  
Vol 83 (3) ◽  
pp. 310-313
Author(s):  
F. A. Stepanov ◽  
A. S. Emelyanova ◽  
A. L. Rakevich ◽  
V. P. Mironov ◽  
E. F. Martynovich

2014 ◽  
Vol 875-877 ◽  
pp. 9-13
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carriers relaxing and thermal emission of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for sample with lower dot size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carriers relaxing process of quantum dot system is demonstrated by our model.


2009 ◽  
Vol 106 (10) ◽  
pp. 104314 ◽  
Author(s):  
Weiwei Zhang ◽  
Ming Gong ◽  
Chuan-Feng Li ◽  
Guang-Can Guo ◽  
Lixin He

1997 ◽  
Vol 82 (9) ◽  
pp. 4500-4503 ◽  
Author(s):  
C. Rincón ◽  
S. M. Wasim ◽  
G. Marı́n ◽  
G. Sánchez Pérez ◽  
G. Bacquet

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