Temperature dependence of the photoluminescence spectra of single crystals of CuInTe2

1997 ◽  
Vol 82 (9) ◽  
pp. 4500-4503 ◽  
Author(s):  
C. Rincón ◽  
S. M. Wasim ◽  
G. Marı́n ◽  
G. Sánchez Pérez ◽  
G. Bacquet
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Photoluminescence Spectra

Studies on the Temperature Stability of Pure and Doped Triglycine Sulphate Crystals Using TGA/DTA

2020 ◽  
Vol 10 (3) ◽  
pp. 206-212
Author(s):  
Vijeesh Padmanabhan ◽  
Maneesha P. Madhu ◽  
Supriya M. Hariharan
Keyword(s):  
Thermal Analysis ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Temperature Stability ◽  
Bandgap Energy ◽  
Dsc Analysis ◽  
Slow Cooling ◽  
As Doping ◽  
Similar Dependence ◽  
Temperature Ranges

Aim: To study the temperature stability of TGS doped with ZnSO4, CdCl2, BaCl2, and compare it with that of pure TGS. Objectives: Synthesizing pure and doped TGS and studying their temperature dependence using TGA, DTA, and DSC analysis. Methods: Slow cooling solution growth was used to grow single crystals of pure and doped TGS. The TGA, DTA and DSC analysis was conducted for determining the temperature stability. Results: The thermal analysis of pure and doped TGS shows that the doped samples show a similar dependence on temperature as pure TGS. The temperature of decomposition of pure and doped samples (BTGS, ZTGS, CdTGS) was 226.60°C, 228.38°C, 229.13°C, and 239.13°C respectively. The melting onset of these samples was 214.51°C, 216.04°C, 217.69°C and 216.04°C respectively. Conclusion: The study shows that doping TGS with the above three described materials did not alter their temperature stability considerably. It is a good result as doping TGS, for varying its characteristics like absorbance, reflectance, bandgap energy, etc., which did not alter its temperature stability. Therefore, TGS doped with the above three dopants can be used at the same temperature ranges as of pure TGS but with much-improved efficiency.

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Temperature dependence of the microhardness of beryllium single crystals and Be-Cu alloys

1975 ◽  
Vol 7 (10) ◽  
pp. 1251-1254
Author(s):  
S. S. Avotin ◽  
I. I. Papirov ◽  
G. F. Tikhinskii ◽  
A. D. Tkalenko ◽  
V. G. Tkachenko ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Cu Alloys

Temperature dependence of photoluminescence spectra of self-organized CdSe quantum dots

2000 ◽  
Vol 214-215 ◽  
pp. 770-773 ◽  
Author(s):  
Yasuhiro Murase ◽  
Takeshi Ota ◽  
Nobuhiro Yasui ◽  
Akihiro Shikimi ◽  
Tsuguki Noma ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Cdse Quantum Dots ◽  
Photoluminescence Spectra ◽  
Self Organized

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

Temperature Dependence of Paraelectric Resonance of OH− Centres in KI Single Crystals

1974 ◽  
Vol 63 (1) ◽  
pp. 197-200 ◽  
Author(s):  
R. Hundhausen ◽  
R. Osswald ◽  
H. C. Wolf
Keyword(s):  
Temperature Dependence ◽  
Single Crystals

Temperature dependence of creep of CdAg single crystals between 1.55 and 45 K

1981 ◽  
Vol 63 (2) ◽  
pp. 717-722 ◽  
Author(s):  
I. Stulíková ◽  
V. P. Soldatov ◽  
V. I. Startsev
Keyword(s):  
Temperature Dependence ◽  
Single Crystals

Temperature coefficient of Young’s modulus of silver microwhiskers determined by a laser Doppler vibration measurement

2021 ◽  
pp. 2150350
Author(s):  
Yijun Jiang ◽  
Mingyuan Lu ◽  
Shiliang Wang ◽  
Han Huang
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Single Crystals ◽  
Young’S Modulus ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Young's Modulus ◽  
Laser Doppler Vibrometer ◽  
Laser Doppler ◽  
Vibration Measurement

Temperature dependence of Young’s modulus of Ag microwhiskers was determined by a laser Doppler vibrometer. The Ag whiskers with diameters in sub-microns were synthesized by the use of physical vapor deposition (PVD). They have a five-fold twinned structure grown along the [1 1 0] direction. The temperature coefficient of Young’s modulus was measured to be [Formula: see text] ppm/K in the range of 300 K to 650 K. The measured values are very close to the reported values of [Formula: see text] ppm/K for bulk Ag single crystals. This finding can benefit the design of Ag-based micro/nano-electromechanical systems or micro/nano-interconnectors operated at elevated or lowered temperatures.

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