Temperature dependence of exciton complexes photoluminescence spectra in self-assembled InAs/GaAs quantum rings

2009 ◽  
Vol 106 (10) ◽  
pp. 104314 ◽  
Author(s):  
Weiwei Zhang ◽  
Ming Gong ◽  
Chuan-Feng Li ◽  
Guang-Can Guo ◽  
Lixin He
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Spectra ◽  
Quantum Rings ◽  
Self Assembled

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Temperature dependence of photoluminescence spectra of self-organized CdSe quantum dots

2000 ◽  
Vol 214-215 ◽  
pp. 770-773 ◽  
Author(s):  
Yasuhiro Murase ◽  
Takeshi Ota ◽  
Nobuhiro Yasui ◽  
Akihiro Shikimi ◽  
Tsuguki Noma ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Cdse Quantum Dots ◽  
Photoluminescence Spectra ◽  
Self Organized

Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots

2003 ◽  
Vol 789 ◽  
Author(s):  
Morgan E. Ware ◽  
Allan Bracker ◽  
Daniel Gammon ◽  
David Gershoni
Keyword(s):  
Quantum Dots ◽  
Circular Polarization ◽  
Schottky Diode ◽  
Heavy Hole ◽  
Photoluminescence Spectra ◽  
Polarization Spectroscopy ◽  
Charged Exciton ◽  
Self Assembled ◽  
Positively Charged

ABSTRACTWe have demonstrated single dot spectroscopy of InAs/GaAs self-assembled quantum dots embedded in a bias controlled Schottky diode. The photoluminescence spectra exhibit discrete lines depending on bias, which we attribute to the recombination of positively charged, neutral, and negatively charged confined excitons. With excitation directly into the dot, large circular polarization memory is exhibited by the two charged exciton (trion) lines. This indicates long spin lifetimes for both the electron and the heavy hole in the quantum dots.

Temperature Dependence of the Red Photoluminescence Spectra of Diamonds

2019 ◽  
Vol 83 (3) ◽  
pp. 310-313
Author(s):  
F. A. Stepanov ◽  
A. S. Emelyanova ◽  
A. L. Rakevich ◽  
V. P. Mironov ◽  
E. F. Martynovich
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Spectra

scholarly journals Oscillatory Persistent Currents in Self-Assembled Quantum Rings

2007 ◽  
Vol 99 (14) ◽  
Author(s):  
N. A. J. M. Kleemans ◽  
I. M. A. Bominaar-Silkens ◽  
V. M. Fomin ◽  
V. N. Gladilin ◽  
D. Granados ◽  
...  
Keyword(s):  
Persistent Currents ◽  
Quantum Rings ◽  
Self Assembled

scholarly journals Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings

2020 ◽  
Vol 117 (21) ◽  
pp. 213101
Author(s):  
Juyeong Jang ◽  
Seunghwan Lee ◽  
Minju Kim ◽  
Sunwoo Woo ◽  
Inhong Kim ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Gain Spectrum ◽  
Quantum Rings

scholarly journals Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
T. A. Nguyen ◽  
S. Mackowski ◽  
H. Rho ◽  
H. E. Jackson ◽  
L. M. Smith ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Ground State ◽  
State Transition ◽  
Longitudinal Optical ◽  
Photoluminescence Spectra ◽  
Single Quantum Dots ◽  
Major Carrier ◽  
Excitation Mechanisms ◽  
Self Assembled

ABSTRACTWe show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state – ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state – ground state relaxation is important for all dots in ensemble, while phonon-assisted processes are dominant for the dots with smaller lateral size.

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