Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors

10.1520/f1388 ◽  
2003 ◽  
Author(s):  
Keyword(s):  
Metal Oxide ◽  
Test Method ◽  
Mos Capacitors ◽  
Silicon Material ◽  
Metal Oxide Silicon ◽  
Generation Lifetime

Deep Level Transient Spectroscopy of Defects Induced by the Combination of CF4 Reactive Ion Etching and Oxidation in Metal-Oxide-Silicon Capacitors.

1989 ◽  
Vol 148 ◽  
Author(s):  
Dominique Vuillaume ◽  
Jeff P. Gambino
Keyword(s):  
Metal Oxide ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Interface States ◽  
Ion Etching ◽  
Mos Capacitors ◽  
Metal Oxide Silicon ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTMetal-Oxide-silicon (MOS) capacitors have been fabricated on CFb reactive ion etched silicon (n and p types) in order to study the defects at the Si-Si02 interface and in the bulk of the substrate, produced by the combination of reactive ion etching (RIE) and oxidation. Bulk defects and fast interface states are analysed by Deep Level Transient Spectroscopy (DLTS) and the slow interface states in the oxide layer near the interface are probed by Tunnel-DLTS. A density of fast interface states in the range 1010-1011 cm−2 eV−1 is observed for capacitors (both n and p types) fabricated with either dry or wet oxidations, and is probably due to disrupted or strained bonds at the Si-SiO2 interface. The observation of bulk defects in the wet-RIE oxide samples but not in the dry-RIE oxide samples may be related to the shorter oxidation time for wet oxides (31mn) compared to dry oxides(190mn) and explained by a greater annealing of RIE induced defects during the dry oxidation. The bulk traps are identified to be related to carbon contamination, in SiC form, introduced during RIE. Finally, an increase of the slow interface states density is observed for the n-type dry oxide samples.

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon
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