Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

2008 ◽  
Author(s):  
Keyword(s):  
Single Crystal ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Test Methods

Transport Study on Overdoped TlBa2CUO6+δ Single Crystal

1992 ◽  
Vol 275 ◽  
Author(s):  
Takashi Manako ◽  
Yuichi Shimakawa ◽  
Yoshimi Kubo
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Fermi Liquid ◽  
Flux Method ◽  
Scattering Rate ◽  
Out Of Plane ◽  
Temperature Dependences ◽  
Characteristic Maximum

ABSTRACTTl2Ba2Cuo6+δ(T1-2201) single crystals are prepared by a KCI flux method. In-plane and out-of plane resistivities (ρabρc as well as the in-plane Hall coefficient are measured for the single crystal samples with various 7c's. The ρc values are as large as ∼10−1 Ω cm, which is larger than that of YBa2Cu3O7, but smaller than that of Bi2Sr2CaCu2O8. Temperature dependences of ρc show metallic behaviors for both normal metallic and 75-K superconducting samples. Temperature dependence of in-plane resistivity par changes from ∼T2 to ∼T1 with increasing Tc In-plane Hall coefficient RH shows a characteristic maximum at about 100 K for all samples. Although both ρab and RH have rather a complicated temperature dependence, inverse Hall mobility μH(=ρab/RH always exhibits clear T2 dependence for all samples. These results suggest that the intrinsic scattering rate of this material varies as ∼T2, just like in an ordinary Fermi liquid, and that the carrier concentration actually changes with temperature like that observed in nH(=1/RHe).

Size effect in the low-field Hall coefficient of single-crystal copper films

1985 ◽  
Vol 61 (3-4) ◽  
pp. 281-289 ◽  
Author(s):  
I. Sakamoto ◽  
M. Fukuhara ◽  
Y. Koide ◽  
K. Yonemitsu
Keyword(s):  
Size Effect ◽  
Single Crystal ◽  
Hall Coefficient ◽  
Copper Films ◽  
Single Crystal Copper ◽  
Low Field

scholarly journals Optical and Transport Properties of p-Type GaAs

2012 ◽  
Vol 36 (1) ◽  
pp. 97-107 ◽  
Author(s):  
Mehnaz Sharmin ◽  
Shamima Choudhury ◽  
Nasrin Akhtar ◽  
Tahmina Begum
Keyword(s):  
Light Intensity ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Room Temperature ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
Band Gap Energy ◽  
Hall Effect Measurements ◽  
P Type

Electrical properties such as electrical resistivity, Hall coefficient, Hall mobility, carrier concentration of p-type GaAs samples were studied at room temperature (300 K). Resistivity was  found to be of the order of 5.6 × 10-3?-cm. The Hall coefficient (RH) was calculated to be 7.69 × 10-1cm3/C and Hall mobility (?H) was found to be 131cm2/V-s at room temperature from Hall effect   measurements. Carrier concentration was estimated to be 8.12 × 1018/cm3 and the Fermi level was calculated directly from carrier density data which was 0.33 eV. Photoconductivity measurements  were carried on by varying sample current, light intensity and temperature at constant chopping     frequency 45.60 Hz in all the cases mentioned above. It was observed that within the range of sample current 0.1 - 0.25mA photoconductivity remains almost constant at room temperature 300K and it was found to be varying non-linearly with light intensity within the range 37 - 12780 lux. Photoconductivity was observed to be increasing linearly with temperature between 308 and 428 K. Absorption coefficient (?) of the samples has been studied with variation of wavelength (300 -  2500 nm). The value of optical band gap energy was calculated between 1.34 and 1.41eV for the material from the graph of (?h?)2 plotted against photon energy. The value of lattice parameter (a) was found to be 5.651 by implying X-ray diffraction method (XRD).DOI: http://dx.doi.org/10.3329/jbas.v36i1.10926Journal of Bangladesh Academy of Sciences, Vol. 36, No. 1, 97-107, 2012 

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