Significant Effects of the D − Band on the Hall Coefficient and the Hall Mobility of n‐InP

2019 ◽  
Vol 257 (2) ◽  
pp. 1900354 ◽  
Author(s):  
Yasutomo Kajikawa
Keyword(s):  
Hall Coefficient ◽  
Hall Mobility

scholarly journals Optical and Transport Properties of p-Type GaAs

2012 ◽  
Vol 36 (1) ◽  
pp. 97-107 ◽  
Author(s):  
Mehnaz Sharmin ◽  
Shamima Choudhury ◽  
Nasrin Akhtar ◽  
Tahmina Begum
Keyword(s):  
Light Intensity ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Room Temperature ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
Band Gap Energy ◽  
Hall Effect Measurements ◽  
P Type

Electrical properties such as electrical resistivity, Hall coefficient, Hall mobility, carrier concentration of p-type GaAs samples were studied at room temperature (300 K). Resistivity was  found to be of the order of 5.6 × 10-3?-cm. The Hall coefficient (RH) was calculated to be 7.69 × 10-1cm3/C and Hall mobility (?H) was found to be 131cm2/V-s at room temperature from Hall effect   measurements. Carrier concentration was estimated to be 8.12 × 1018/cm3 and the Fermi level was calculated directly from carrier density data which was 0.33 eV. Photoconductivity measurements  were carried on by varying sample current, light intensity and temperature at constant chopping     frequency 45.60 Hz in all the cases mentioned above. It was observed that within the range of sample current 0.1 - 0.25mA photoconductivity remains almost constant at room temperature 300K and it was found to be varying non-linearly with light intensity within the range 37 - 12780 lux. Photoconductivity was observed to be increasing linearly with temperature between 308 and 428 K. Absorption coefficient (?) of the samples has been studied with variation of wavelength (300 -  2500 nm). The value of optical band gap energy was calculated between 1.34 and 1.41eV for the material from the graph of (?h?)2 plotted against photon energy. The value of lattice parameter (a) was found to be 5.651 by implying X-ray diffraction method (XRD).DOI: http://dx.doi.org/10.3329/jbas.v36i1.10926Journal of Bangladesh Academy of Sciences, Vol. 36, No. 1, 97-107, 2012 

Transport Study on Overdoped TlBa2CUO6+δ Single Crystal

1992 ◽  
Vol 275 ◽  
Author(s):  
Takashi Manako ◽  
Yuichi Shimakawa ◽  
Yoshimi Kubo
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Fermi Liquid ◽  
Flux Method ◽  
Scattering Rate ◽  
Out Of Plane ◽  
Temperature Dependences ◽  
Characteristic Maximum

ABSTRACTTl2Ba2Cuo6+δ(T1-2201) single crystals are prepared by a KCI flux method. In-plane and out-of plane resistivities (ρabρc as well as the in-plane Hall coefficient are measured for the single crystal samples with various 7c's. The ρc values are as large as ∼10−1 Ω cm, which is larger than that of YBa2Cu3O7, but smaller than that of Bi2Sr2CaCu2O8. Temperature dependences of ρc show metallic behaviors for both normal metallic and 75-K superconducting samples. Temperature dependence of in-plane resistivity par changes from ∼T2 to ∼T1 with increasing Tc In-plane Hall coefficient RH shows a characteristic maximum at about 100 K for all samples. Although both ρab and RH have rather a complicated temperature dependence, inverse Hall mobility μH(=ρab/RH always exhibits clear T2 dependence for all samples. These results suggest that the intrinsic scattering rate of this material varies as ∼T2, just like in an ordinary Fermi liquid, and that the carrier concentration actually changes with temperature like that observed in nH(=1/RHe).

P-Type Transparent Conductivity of Cu1-xAlS2 (x = 0 ~ 0.08)

2008 ◽  
Vol 368-372 ◽  
pp. 666-668 ◽  
Author(s):  
Min Ling Liu ◽  
Fu Qiang Huang ◽  
Li Dong Chen
Keyword(s):  
Optical Properties ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

A series of Cu1-xAlS2 (x = 0 ~ 0.08) bulk samples were synthesized by spark plasma sintering. The electrical and optical properties were investigated. P-type conductions for all samples were confirmed by both positive Seebeck coefficient and Hall coefficient. Bulk undoped CuAlS2 had a high conductivity of about 0.9 S/cm with a large band gap of 3.4 eV at room temperature. For vacancy-doped in Cu site, the carrier concentration was highly enhanced, reaching 1.7 × 1019 cm-3 for 8 mol% doped sample, and without decreasing the bang gap. The introduction of vacancies destroys the continuity of Cu-S network, which decreases the Hall mobility.

Hall Effect in LaB6 and NdB6

2009 ◽  
Vol 152-153 ◽  
pp. 525-528 ◽  
Author(s):  
M.A. Anisimov ◽  
A.V. Bogach ◽  
V.V. Glushkov ◽  
S.V. Demishev ◽  
N.A. Samarin ◽  
...  
Keyword(s):  
Hall Effect ◽  
Hall Coefficient ◽  
Hall Mobility ◽  
Charge Carriers ◽  
Magnetic Scattering ◽  
Conduction Electrons ◽  
Sample Rotation ◽  
Axis Of Rotation ◽  
Similar Temperature ◽  
Rotation Technique

To shed more light on the peculiarities of ground state formation in RB6 Hall effect in NdB6 and LaB6 has been investigated on the single crystals at temperatures 2K<T<300K in magnetic fields H < 80kOe. The Hall coefficient RH and resistivity ρ have been measured by the sample rotation technique in fixed magnetic field to be perpendicular to the axis of rotation (<110> for LaB6 and <100> for NdB6). A very similar temperature behavior of RH(T) with the step–like anomaly near T ~ 25K has been established for both magnetic NdB6 and diamagnetic LaB6 at intermediate temperatures T>10K. The temperature independent behaviour of Hall coefficient (RH(LaB6) ~ –3.6•10-4 cm3/C, RH(NdB6) ~ –3.7•10-4 cm3/C) observed in the interval 10K<T<20K allowed to estimate the reduced charge carriers’ concentration n/nR ≈ 1.21±0.03 (nR– the concentration of La (Nd) ions). The Hall mobility μH = RH(T)/ρ(T) estimated for LaB6 and NdB6 was shown to be well fitted by the power law μH ~ T-α where α(LaB6) ≈ 1.5, α(NdB6) ≈ 0.6 at the intermediate temperatures 50K<T<300K and α(LaB6) ≈ 3 in the range 20K<T<50K. The drastic decrease of both the Hall mobility μH and the exponent α is discussed in terms of the magnetic scattering enhancement of conduction electrons on the localized 4ƒ–states of Nd3+ ions.

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