Strong anisotropy of magnetization and sign reversion of ordinary Hall coefficient in single crystal Ge1−xMnx magnetic semiconductor films

2009 ◽  
Vol 95 (6) ◽  
pp. 062513 ◽  
Author(s):  
J. X. Deng ◽  
Y. F. Tian ◽  
S. M. He ◽  
H. L. Bai ◽  
T. S. Xu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Hall Coefficient ◽  
Magnetic Semiconductor ◽  
Semiconductor Films ◽  
Strong Anisotropy

Organic Single-Crystal Semiconductor Films on a Millimeter Domain Scale

2015 ◽  
Vol 27 (43) ◽  
pp. 6870-6877 ◽  
Author(s):  
Sooncheol Kwon ◽  
Jehan Kim ◽  
Geunjin Kim ◽  
Kilho Yu ◽  
Yong-Ryun Jo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Semiconductor Films ◽  
Organic Single Crystal

Size effect in the low-field Hall coefficient of single-crystal copper films

1985 ◽  
Vol 61 (3-4) ◽  
pp. 281-289 ◽  
Author(s):  
I. Sakamoto ◽  
M. Fukuhara ◽  
Y. Koide ◽  
K. Yonemitsu
Keyword(s):  
Size Effect ◽  
Single Crystal ◽  
Hall Coefficient ◽  
Copper Films ◽  
Single Crystal Copper ◽  
Low Field

scholarly journals Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions

2019 ◽  
Vol 33 (13) ◽  
pp. 1950121 ◽  
Author(s):  
Juan Pei ◽  
Shu-Qin Xiao ◽  
Li-Min He ◽  
Kun Zhang ◽  
Huan-Huan Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
Potential Barrier ◽  
Coupling Effect ◽  
Magnetic Semiconductor ◽  
Anomalous Hall Effect ◽  
Hall Resistance ◽  
Band Model ◽  
Semiconductor Films ◽  
Text Type ◽  
Interfacial Potential

The large nonlinear Hall effect was found in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions formed by sputtering amorphous [Formula: see text]-type (FeCo)[Formula: see text]Ge[Formula: see text] magnetic semiconductor films on near intrinsic n-type Ge substrate. It is very interesting that the mechanisms of the large nonlinear Hall effect in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions are different at different temperature ranges. Below 10 K, the Hall resistance of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions is almost the same as the anomalous Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text] ferromagnetic films. While the temperature increased from 10 to 60 K, the nonlinear Hall resistance, longitudinal conductance, and magnetoresistance all increased quickly and reached the maximum at T[Formula: see text]=[Formula: see text]60 K. In this case, thermally excited conducting carriers can tunnel through the interfacial potential barrier in (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions. Thus, in the range of 10–60 K, the enhanced nonlinear Hall resistance can be attributed to the anomalous Hall effect which was further enhanced by interfacial Rashba spin–orbit coupling effect. When the temperature further increased from 60 to 250 K, the interfacial potential barrier weakened gradually, and the Hall resistance and magnetoresistance decreased due to the shunting of the Ge substrate. In this case, the nonlinear Hall effect of (FeCo)[Formula: see text]Ge[Formula: see text]/Ge heterojunctions can be explained very well by the two-band model of nonlinear Hall effect.

The electrical properties of graphite

1953 ◽  
Vol 217 (1128) ◽  
pp. 9-26 ◽  
Keyword(s):  
Single Crystal ◽  
Free Path ◽  
Hall Coefficient ◽  
Mean Free Path ◽  
Free Electrons ◽  
Satisfactory Explanation ◽  
Wide Range ◽  
The Mean ◽  
Positive Holes ◽  
Crystalline Graphite

The Hall coefficient and resistivity of a range of polycrystalline graphites with different crystal sizes and a single crystal of Travancore graphite have been measured over a wide range of temperature. The number of free electrons has been found to be approximately 6x10 18 per cm 3 at room temperature; the variation with temperature cannot be accurately determined. The deficit of electrons in poorly crystalline graphite gives rise to positive Hall coefficients. Quenching removes electrons, and a study of this process has enabled the ratio of the mobilities of positive holes and electrons to be estimated at 0·80. An interesting effect has been observed in the variation of the Hall coefficient of the single crystal with field; no satisfactory explanation has been found for this phenomenon. The resistivity of polycrystalline graphite depends on the density and on the orientation and size of the crystals. From the variation of resistivity with temperature and the size of the crystals, the mean free path due to thermal scattering, has been found to be 2350 Å at 273° K; the variation of mean free path with temperature has been deduced. The product of effective mass and velocity of the free electrons has been determined as a function of temperature; the accuracy is limited by uncertainties in the number of free electrons.

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