scholarly journals Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

2017 ◽  
Vol 68 (1) ◽  
pp. 74-78 ◽  
Author(s):  
Kateřina Dragounová ◽  
Zdeněk Potůček ◽  
Štěpán Potocký ◽  
Zdeněk Bryknar ◽  
Alexander Kromka

Abstract In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 - 300 K and used to determine the temperature dependence of the zero-phononline full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.

2017 ◽  
Vol 68 (7) ◽  
pp. 3-9
Author(s):  
Kateřina Dragounová ◽  
Tibor Ižák ◽  
Alexander Kromka ◽  
Zdeněk Potůček ◽  
Zdeněk Bryknar ◽  
...  

AbstractNanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3, Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈3.5 cm−1) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.


2017 ◽  
Vol 14 (134) ◽  
pp. 20170382 ◽  
Author(s):  
P. A. Nistor ◽  
P. W. May

Progress made in the last two decades in chemical vapour deposition technology has enabled the production of inexpensive, high-quality coatings made from diamond to become a scientific and commercial reality. Two properties of diamond make it a highly desirable candidate material for biomedical applications: first, it is bioinert, meaning that there is minimal immune response when diamond is implanted into the body, and second, its electrical conductivity can be altered in a controlled manner, from insulating to near-metallic. In vitro, diamond can be used as a substrate upon which a range of biological cells can be cultured. In vivo , diamond thin films have been proposed as coatings for implants and prostheses. Here, we review a large body of data regarding the use of diamond substrates for in vitro cell culture. We also detail more recent work exploring diamond-coated implants with the main targets being bone and neural tissue. We conclude that diamond emerges as one of the major new biomaterials of the twenty-first century that could shape the way medical treatment will be performed, especially when invasive procedures are required.


1995 ◽  
Vol 416 ◽  
Author(s):  
Anders Jauhiainen ◽  
Stefan Bengtsson ◽  
Olof Engström

ABSTRACTWe have investigated the electrical properties of undoped polycrystalline diamond thin films deposited on (100)-oriented n-type and p-type silicon substrates. The films, intended for electronic applications, were manufactured using hot filament chemical vapour deposition (HFCVD). To a large extent the capacitance-voltage characteristics are influenced by traps located close to the interface between the diamond layer and the silicon substrate. These traps play an important role for voltage sharing between the diamond layer and the silicon space charge region. The DC current density through the diamond film has the same functional dependence on the electric field for films deposited on both n- and p-Si. The field dependency agrees with a Frenkel-Poole transport model. Further, although the DC current transport is thermally activated, it does not follow an Arrhenius relation. A possible reason is that traps within a broad range of energy levels are involved in the charge transport. Finally, current transients resulting from stepwise changes in the applied voltage follow a power law time dependence where the kinetics depend only weakly on temperature.


2014 ◽  
Vol 903 ◽  
pp. 102-107
Author(s):  
Jackie Chen Keng Yik ◽  
Karim bin Deraman ◽  
Ong Wai Kit ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Rosli Hussin

Undoped diamond like thin films have been prepared by using Direct Current - Plasma Enhanced Chemical Vapour Deposition system. A potentially diamond thin films was fabricated in the presence of gas mixture which accordance to the ratio CH4(1%) + H2(39%) + Ar (60%). The substrate temperature was controlled and adjusted from 300 °C to 500 °C in a vacuum chamber with the optimum pressure of 4 X 10-1Torr. The films were characterized by X ray diffraction microscopy (XRD), Photoluminescene spectroscopy (PL) and Fourier Transform Infrared (FTIR) spectroscopy. It shows that, XRD pattern shown that the film was formed in the amorphous phase with a high fraction of sp3hybridization. Luminescene band shows the peak position at (3.16 eV and 2.94 eV), (3.16 eV and 2.95 eV), (3.17 eV and 2.93 eV) and (3.26 eV) for the films deposited at 300, 350, 400 and 500 °C, respectively. The structural configuration of film obtained which corresponding to the sp3hybridization of C H bonding gives a most significant result at approximately 760 cm-1region was presented.


Shinku ◽  
1994 ◽  
Vol 37 (7) ◽  
pp. 573-578
Author(s):  
Toshihiro ANDO ◽  
Takashi AIZAWA ◽  
Mutsukazu KAMO ◽  
Yoichiro SATO

2013 ◽  
Vol 4 ◽  
pp. 300-305 ◽  
Author(s):  
Patrik Rath ◽  
Svetlana Khasminskaya ◽  
Christoph Nebel ◽  
Christoph Wild ◽  
Wolfram HP Pernice

Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD) on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.


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