scholarly journals Special Issue: Diamond Thin Films. H-adsorption on Chemical Vapour Deposited Diamond Surfaces.

Shinku ◽  
1994 ◽  
Vol 37 (7) ◽  
pp. 573-578
Author(s):  
Toshihiro ANDO ◽  
Takashi AIZAWA ◽  
Mutsukazu KAMO ◽  
Yoichiro SATO
2017 ◽  
Vol 14 (134) ◽  
pp. 20170382 ◽  
Author(s):  
P. A. Nistor ◽  
P. W. May

Progress made in the last two decades in chemical vapour deposition technology has enabled the production of inexpensive, high-quality coatings made from diamond to become a scientific and commercial reality. Two properties of diamond make it a highly desirable candidate material for biomedical applications: first, it is bioinert, meaning that there is minimal immune response when diamond is implanted into the body, and second, its electrical conductivity can be altered in a controlled manner, from insulating to near-metallic. In vitro, diamond can be used as a substrate upon which a range of biological cells can be cultured. In vivo , diamond thin films have been proposed as coatings for implants and prostheses. Here, we review a large body of data regarding the use of diamond substrates for in vitro cell culture. We also detail more recent work exploring diamond-coated implants with the main targets being bone and neural tissue. We conclude that diamond emerges as one of the major new biomaterials of the twenty-first century that could shape the way medical treatment will be performed, especially when invasive procedures are required.


1995 ◽  
Vol 416 ◽  
Author(s):  
Anders Jauhiainen ◽  
Stefan Bengtsson ◽  
Olof Engström

ABSTRACTWe have investigated the electrical properties of undoped polycrystalline diamond thin films deposited on (100)-oriented n-type and p-type silicon substrates. The films, intended for electronic applications, were manufactured using hot filament chemical vapour deposition (HFCVD). To a large extent the capacitance-voltage characteristics are influenced by traps located close to the interface between the diamond layer and the silicon substrate. These traps play an important role for voltage sharing between the diamond layer and the silicon space charge region. The DC current density through the diamond film has the same functional dependence on the electric field for films deposited on both n- and p-Si. The field dependency agrees with a Frenkel-Poole transport model. Further, although the DC current transport is thermally activated, it does not follow an Arrhenius relation. A possible reason is that traps within a broad range of energy levels are involved in the charge transport. Finally, current transients resulting from stepwise changes in the applied voltage follow a power law time dependence where the kinetics depend only weakly on temperature.


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