scholarly journals ZnO:Al Thin Films with Buffer Layers Fabricated via Nitrogen Mediated Crystallization: Effects of N2/Ar Gas Flow Rate Ratio

2012 ◽  
Vol 37 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Iping Suhariadi ◽  
Naho Itagaki ◽  
Kazunari Kuwahara ◽  
Koichi Oshikawa ◽  
Daisuke Yamashita ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rate Ratio ◽  
Gas Flow ◽  
Buffer Layers ◽  
Flow Rate Ratio ◽  
Gas Flow Rate ◽  
Ar Gas

A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

2011 ◽  
Vol 383-390 ◽  
pp. 903-908
Author(s):  
S. Shanmugan ◽  
D. Mutharasu ◽  
Z. Hassan ◽  
H. Abu. Hassan
Keyword(s):  
Thin Films ◽  
Surface Topography ◽  
Flow Rate ◽  
Gas Flow ◽  
Process Conditions ◽  
Gas Flow Rate ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Large Particles ◽  
Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

scholarly journals Influence of SiH4/CH4 gas flow rate ratio on the properties of a-SiC:H films showing a negative temperature coeffcient in D.C. conductivity.

Shinku ◽  
1991 ◽  
Vol 34 (3) ◽  
pp. 354-357
Author(s):  
Isamu NAKAAKI ◽  
Nobuo SAITO ◽  
Norihiko TANAKA ◽  
Kazutosi YOSIDA
Keyword(s):  
Flow Rate ◽  
Rate Ratio ◽  
Gas Flow ◽  
Negative Temperature ◽  
Flow Rate Ratio ◽  
Gas Flow Rate

Influence of Ar gas flow rate in organosilicon plasma for the fabrication of SiO:CH thin films by PECVD method

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5259-5261 ◽  
Author(s):  
Yongsup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Naoki Nanba ◽  
Yasushi Inoue ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Ar Gas

Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates

1989 ◽  
Vol 4 (1) ◽  
pp. 204-214 ◽  
Author(s):  
H. S. Kong ◽  
J. T. Glass ◽  
R. F. Davis
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Flow Rate ◽  
Rate Ratio ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Gas Flow Rate ◽  
Carrier Gas ◽  
Carrier Gas Flow

Beta–SiC thin films have been epitaxially grown on 6H–SiC {0001} substrates via chemical vapor deposition (CVD). The growth rate increased linearly with the source/carrier gas flow rate ratio. The activation energy for the growth of β–SiC grown on the Si face of the 6H–SiC substrate was 12 Kcal/mole. These observations are consistent with a surface reaction-controlled process. The as-grown surface morphology is dependent on the terminal layer of the substrate, the growth temperature, and the source/carrier gas flow rate ratio. The C face of a 6H–SiC {0001} substrate caused a higher growth rate and thus poorer surface morphology than the Si face under the same growth conditions. The optimum temperature range for growth of a flat, mirror-like β–SiC surface was determined to be 1773–1823 K in the present CVD system. The microstructure and nucleation of double positioning boundaries were investigated via transmission and scanning electron microscopies. Triangular defects and their modifications were also observed, and their origins have been discussed.

scholarly journals Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1635
Author(s):  
Md. Akhtaruzzaman ◽  
Md. Shahiduzzaman ◽  
Nowshad Amin ◽  
Ghulam Muhammad ◽  
Mohammad Aminul Islam ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Gas Flow Rate ◽  
Flow Rates ◽  
Ar Gas

Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 1014 to 26.29 × 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells.

scholarly journals Carbon Co-Deposition During Gas Reduction of Water-Atomized Fe-Cr-Mo Powder

2017 ◽  
Vol 62 (2) ◽  
pp. 1119-1124
Author(s):  
B. Ali ◽  
S.H. Choi ◽  
S.J. Seo ◽  
D.Y. Maeng ◽  
C.G. Lee ◽  
...  
Keyword(s):  
Carbon Content ◽  
Oxide Layer ◽  
Iron Powder ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
High Quality ◽  
Exponential Relationship ◽  
Water Atomization ◽  
Ar Gas

AbstractThe water atomization of iron powder with a composition of Fe-3Cr-0.5Mo (wt.%) at 1600°C and 150 bar creates an oxide layer, which in this study was reduced using a mixture of methane (CH4) and argon (Ar) gas. The lowest oxygen content was achieved with a 100 cc/min flow rate of CH4, but this also resulted in a co-deposition of carbon due to the cracking of CH4. This carbon can be used directly to create high-quality, sinter hardenable steel, thereby eliminating the need for an additional mixing step prior to sintering. An exponential relationship was found to exist between the CH4gas flow rate and carbon content of the powder, meaning that its composition can be easily controlled to suit a variety of different applications.

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