Effect of oxygen gas flow rate on phase transformation and morphology of vanadium oxide thin films

2018 ◽  
Vol 5 (6) ◽  
pp. 13870-13873 ◽  
Author(s):  
T. Rattana ◽  
S. Suwanboon ◽  
C. Kedkaew
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Vanadium Oxide ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Oxide Thin Films ◽  
Oxygen Gas ◽  
Effect Of Oxygen ◽  
Vanadium Oxide Thin Films

scholarly journals Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125105 ◽  
Author(s):  
Muntaser Al-Mansoori ◽  
Sahar Al-Shaibani ◽  
Ahlam Al-Jaeedi ◽  
Jisung Lee ◽  
Daniel Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Flow Rate ◽  
Tin Oxide ◽  
Gas Flow ◽  
Rf Sputtering ◽  
Gas Flow Rate ◽  
Oxide Thin Films

INFLUENCE OF PROCESS PARAMETERS ON OPTICAL AND PHYSICAL PROPERTIES OF ITO THIN FILM

2019 ◽  
Vol 27 (07) ◽  
pp. 1950183
Author(s):  
AREZOO MOSHABAKI ◽  
ERFAN KADIVAR ◽  
ALIREZA FIROOZIFAR
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Gas Flux ◽  
Argon Gas ◽  
Ito Thin Films ◽  
Oxygen Gas

Indium tin oxide (ITO) thin films have been deposited on glass substrate by DC magnetron sputtering in the presence and absence of oxygen gas flux. Subsequently, some of the samples have been annealed in vacuum or air oven at [Formula: see text]C for 20[Formula: see text]min. The optical, surface morphology and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, four-point probe and Hall effect measurements as a function of argon gas flux, film thickness, deposition rate and substrate temperature. Experimental results indicate that the surface roughness increases by decreasing the argon gas flow rate and deposition rate. The result revealed that the lowest surface roughness of 1.07[Formula: see text]nm is achieved at zero oxygen gas flux, argon gas flow 20[Formula: see text]sccm and deposition rate [Formula: see text] Å/s. We have found that the maximum value of merit figure is related to the argon gas flow rate 30[Formula: see text]sccm. In order to obtain a very smooth surface, finally, the ITO thin films have been processed with alumina polishing solution by ultrasonic method. Our experimental results indicate that surface roughness decreases and merit figure increases after polishing process.

Properties of O-Doped CuI Thin Films by Chemical Vapor Deposition (CVD) at Different Deposition Flow Rate

2013 ◽  
Vol 832 ◽  
pp. 444-448
Author(s):  
Nur Amalina Muhamad ◽  
Firdaus Che Mat ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Solution Concentration ◽  
Oxygen Gas ◽  
Effect Of Oxygen ◽  
Oxygen Ratio

The effect of oxygen doping to the properties of CuI thin films was studied. The doping of oxygen to the CuI thin films was done by using single furnace chemical vapor deposition (CVD) method at different oxygen gas flow rate (e.g 10, 20, 30, 40 and 50 sccm). The CuI thin film was first deposited by using mister atomizer at constant CuI solution concentration of 0.05M. The surface morphology and electrical properties of O-doped CuI was studied. The field emission scanning electron microscopy (FESEM) was used to observe the morphology of O-doped CuI thin films. The FESEM images revealed that all the CuI thin films deposited were uniform with the existence of nanostructured CuI particle. The EDX measurement confirm the existence of Cu:I in the films and also the variation of oxygen ratio in the CuI thin films as the oxygen was introduced. The resistivity of 101 Ωcm to 103 Ωcm at constant voltage of-5V to 5V was obtained for the O-doped CuI thin films.

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