scholarly journals Strain Field under the SiO2/Si Interface Revealed by a Multiple-Wave X-ray Diffraction Phenomenon

2007 ◽  
Vol 32 (1) ◽  
pp. 227-229
Author(s):  
Wataru Yashiro ◽  
Shuji Kusano ◽  
Kazushi Miki ◽  
Yoshitaka Yoda ◽  
Kensuke Takahashi, ◽  
...  
Keyword(s):  
Strain Field ◽  
X Ray Diffraction ◽  
Multiple Wave ◽  
X Ray ◽  
Diffraction Phenomenon

Grazing-angle Incidence X-ray Diffraction by the Si1-α(x)-β(x)Geβ(x)Cβ(x)/Si Heterojunction where the Germanium and the Carbon Concentrations are Periodically Varying along the Flat Layer Surface

2002 ◽  
Vol 716 ◽  
Author(s):  
Hayk H. Bezirganyan ◽  
Siranush E. Bezirganyan ◽  
Hakob P. Bezirganyan ◽  
Petros H. Bezirganyan
Keyword(s):  
Strain Field ◽  
Grazing Angle ◽  
Layer Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Intermediate Transformation ◽  
Long Period ◽  
Theoretical Paper ◽  
Carbon Concentrations ◽  
Coherent Part

AbstractPresented theoretical paper concerns the investigation of SiGeC/Si heterojunction by the Grazing-angle Incidence X-ray Diffraction (GIXD) method. We consider a possibility in principal of the GIXD by the specific long-range harmonic variations of the germanium and carbon compositions in the thin SiGeC layer. Evaluation of the theoretically calculated coherent part of x-radiation scattered by the SiGeC layer points the way to the experimental direct investigations of the long-period structured intermediate transformation states of SiGeC layer that emerge owing to inhomogeneity of the strain field along the heterojunction surface.

Structural and superconducting properties of melt-grown Y–Ba–Cu–O superconductors

1996 ◽  
Vol 11 (10) ◽  
pp. 2406-2415 ◽  
Author(s):  
R. Gopalan ◽  
T. Rajasekharan ◽  
T. Roy ◽  
G. Rangarajan ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Field ◽  
Crack Width ◽  
Growth Process ◽  
Critical Radius ◽  
Radius Of Curvature ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

YBa2Cu3O7 (123) samples with varying Y2BaCuO5 (211) concentrations (0 mol%, 20 mol%, 28 mol%, and 50 mol%) were synthesized by the melt-growth process. Microstructural characterizations were done using x-ray diffraction (XRD), optical microscopy, scanning electron microscopy, and transmission electron microscopy (TEM). It was found that 123 platelet width, crack width between the platelets, and 211 particle size decreased systematically with increasing 211 concentration. TEM study showed that there is a critical radius of curvature (rc ≤ 0.2 μm-0.3 μm) of the 123/211 interface where defects/contrasts of strain field start to appear, and these defects are believed to be responsible for pinning the magnetic flux. Microhardness measurements showed that Vickers hardness (VHN) increases with increasing 211 content. Critical current density (Jc) values obtained from magnetization measurements using a SQUID magnetometer were found to increase in melt-grown samples by the addition of 211 content.

Evaluation of the Strain Field Inside and Around Growth Islands by Means of X-Ray Diffuse Scattering

1999 ◽  
Vol 583 ◽  
Author(s):  
Martin Schmidbauer ◽  
Thomas Wiebach ◽  
Helmut Raidt ◽  
Peter Schäfer ◽  
Michael hanke ◽  
...  
Keyword(s):  
Strain Field ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Abrupt Increase ◽  
X Ray ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Transmission Electron ◽  
Highly Strained

AbstractThe strain distribution inside and in the vicinity of coherently strained self-organized islands has been investigated by high-resolution x-ray diffraction (HRXRD). Finite element method (FEM) calculations were carried out in order to calculate the strain field, which was then used to simulate x-ray reciprocal space maps on the basis of kinematical scattering theory. For Si0 75Ge0.25 islands an abrupt increase in the Ge-concentration at about one third of the island height has been found. This behavior can be attributed to different nucleation stages during growth. Highly strained buried CdSe quantum dots (QDs) strongly influence the surrounding ZnSe matrix. From reciprocal space maps and FEM simulations we were able to estimate the shape and size of the islands. The results are in agreement with transmission electron microscopy (TEM) and UHV atomic force microscopy (AFM) data.

X-Ray Diffraction Study of Phason Strain Field in Oriented Icosahedral Al-Mn

1987 ◽  
Vol 59 (19) ◽  
pp. 2239-2239
Author(s):  
J. D. Budai ◽  
J. Z. Tischler ◽  
A. Habenschuss ◽  
G. E. Ice ◽  
V. Elser
Keyword(s):  
Diffraction Study ◽  
Strain Field ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Oxidation process dependence of strain field under the SiO2/Si(001) interface revealed by X-ray multiple-wave diffraction

2007 ◽  
Vol 83 ◽  
pp. 012009
Author(s):  
W Yashiro ◽  
Y Yoda ◽  
K Takahashi ◽  
M Yamamoto ◽  
T Hattori ◽  
...  
Keyword(s):  
Wave Diffraction ◽  
Strain Field ◽  
Oxidation Process ◽  
Multiple Wave ◽  
X Ray

X-Ray Diffraction Contrast from Impurity Precipitates in CdS Single Crystals

1966 ◽  
Vol 10 ◽  
pp. 153-158 ◽  
Author(s):  
Jun-ichi Chikawa
Keyword(s):  
Strain Field ◽  
Crystal Surface ◽  
Bragg Angle ◽  
X Rays ◽  
Bragg Condition ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
X Ray ◽  
Impurity Doped ◽  
Free Plane

AbstractImpurity-doped crystals CdS(GaGl3) have been studied by X-ray topography. Some large precipitates are formed close to the crystal surfaces by annealing at 300°C. In the symmetrical Laue case, the precipitates show circular images (30-60 μ in diameter) due to the radial strains around the precipitates which consist of two semicircles separated by a contrast-free plane parallel to the reflecting plane. The observations indicate that the strain field between the crystal surface and precipitate is not responsible for the contrast, and that the images are formed by X-rays which are deviated from the Bragg condition for the perfect region and satisfy the Bragg condition in the strain field on the inside of the precipitate. One of the semicircles is formed by the incident X-rays with larger glancing angles than the Bragg angle and the other with smaller ones. It is concluded that this contrast is due to the strain around a convex lens shaped precipitate.

In situ observation of x-ray irradiation effect by using a multiwave x-ray diffraction phenomenon

2011 ◽  
Vol 110 (10) ◽  
pp. 102210
Author(s):  
Wataru Yashiro ◽  
Yoshitaka Yoda ◽  
Kazushi Miki ◽  
Toshio Takahashi
Keyword(s):  
In Situ Observation ◽  
Irradiation Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Phenomenon

Observation of the strain field near the Si(111) 7 × 7 surface with a new X-ray diffraction technique

1998 ◽  
Vol 5 (3) ◽  
pp. 964-966 ◽  
Author(s):  
Takashi Emoto ◽  
Koichi Akimoto ◽  
Ayahiko Ichimiya
Keyword(s):  
Strain Field ◽  
Critical Angle ◽  
Total Reflection ◽  
Surface Structures ◽  
Native Oxide ◽  
Oxide Surface ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle

A new X-ray diffraction technique has been developed in order to measure the strain field near a solid surface under ultrahigh vacuum (UHV) conditions. The X-ray optics use an extremely asymmetric Bragg-case bulk reflection. The glancing angle of the X-rays can be set near the critical angle of total reflection by tuning the X-ray energy. Using this technique, rocking curves for Si surfaces with different surface structures, i.e. a native oxide surface, a slightly oxide surface and an Si(111) 7 × 7 surface, were measured. It was found that the widths of the rocking curves depend on the surface structures. This technique is efficient in distinguishing the strain field corresponding to each surface structure.

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